XPTTM 650V IGBT IXXH110N65C4 VCES = 650V

GenX4TM IC110 = 110A

VCE(sat)  2.35V
Extreme Light Punch Through tfi(typ) = 35ns
IGBT for 20-60 kHz Switching

Symbol Test Conditions Maximum Ratings

TO-247 AD
VCES TJ = 25°C to 175°C 650 V
VCGR TJ = 25°C to 175°C, RGE = 1M 650 V
VGES Continuous ±20 V
VGEM Transient ±30 V
G
IC25 TC = 25°C (Chip Capability) 235 A C Tab
E
ILRMS Terminal Current Limit 160 A
IC110 TC = 110°C 110 A
ICM TC = 25°C, 1ms 600 A G = Gate C = Collector
E = Emitter Tab = Collector
SSOA VGE = 15V, TVJ = 150°C, RG = 2 ICM = 220 A
(RBSOA) Clamped Inductive Load @VCE  VCES
tsc VGE = 15V, VCE = 360V, TJ = 150°C 10 μs
Features
(SCSOA) RG = 10, Non Repetitive
PC TC = 25°C 880 W 
Optimized for 20-60kHz Switching

TJ -55 ... +175 °C Square RBSOA

Avalanche Capability
TJM 175 °C 
Short Circuit Capability
Tstg -55 ... +175 °C 
International Standard Package
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
Advantages
Md Mounting Torque 1.13/10 Nm/lb.in.

Weight 6 g High Power Density

175°C Rated

Extremely Rugged

Low Gate Drive Requirement
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
Applications
BVCES IC = 250A, VGE = 0V 650 V

VGE(th) IC = 4mA, VCE = VGE 4.0 6.5 V UPS

Motor Drives
ICES VCE = VCES, VGE = 0V 10 A 
SMPS
TJ = 150C 500 A 
PFC Circuits
IGES VCE = 0V, VGE = 20V 100 nA 
Battery Chargers

Welding Machines
VCE(sat) IC = 110A, VGE = 15V, Note 1 2.06 2.35 V 
TJ = 150C 2.50 V Lamp Ballasts

High Frequency Power Inverters

© 2016 IXYS CORPORATION, All Rights Reserved DS100497C(9/16)

 IXXH110N65C4
Symbol Test Conditions Characteristic Values
TO-247 (IXXH) Outline
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 30 52 S
Cies 5500 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 267 pF P
1 2 3

Cres 80 pF
Qg(on) 167 nC
Qge IC = 110A, VGE = 15V, VCE = 0.5 • VCES 44 nC
Qgc 63 nC
td(on) 30 ns e

tri Inductive load, TJ = 25°C 45 ns Terminals: 1 - Gate 2 - Collector

3 - Emitter
Eon IC = 55A, VGE = 15V 2.50 mJ
Dim. Millimeter Inches
td(off) VCE = 400V, RG = 2 110 ns
Min. Max. Min. Max.
tfi Note 2 35 ns A 4.7 5.3 .185 .209
Eoff 0.63 1.05 mJ A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
td(on) 26 ns b 1.0 1.4 .040 .055
Inductive load, TJ = 150°C b1 1.65 2.13 .065 .084
tri 45 ns b2 2.87 3.12 .113 .123
Eon IC = 55A, VGE = 15V 3.55 mJ C .4 .8 .016 .031
td(off) VCE = 400V, RG = 2 120 ns D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
tfi Note 2 40 ns e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
Eoff 0.90 mJ L1 4.50 .177
RthJC 0.17 °C/W P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
RthCS 0.21 °C/W R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

Notes:
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXXH110N65C4
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC
500
VGE = 15V VGE = 15V
200 450
13V
12V 11V
400 14V
160
350
10V 13V
I C - Amperes

300

I C - Amperes
120 12V
250
11V
9V 200
80
150 10V
8V
40 100 9V

7V 50 8V

0 0 7V
0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 18 20 22 24
VCE - Volts VCE - Volts
Vce_on_threshold
Fig. 4. Dependence of VCE(sat) on
Fig. 3. Output Characteristics @ TJ = 150ºC Junction Temperature
2.0
VGE = 15V
200
14V VGE = 15V
12V 1.8
13V

160 11V 1.6 I C = 220A

VCE(sat) - Normalized
I C - Amperes

1.4
120 10V

1.2
I C = 110A
80 9V
1.0

40 8V
0.8
I C = 55A
7V
0 0.6
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150 175
VCE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage vs.

Fig. 6. Input Admittance
Gate-to-Emitter Voltage
5.5 350

5.0 TJ = 25ºC
300
TJ = - 40ºC
4.5 25ºC
250
4.0
TJ = 150ºC
I C - Amperes
VCE - Volts

3.5 I C = 220A 200

3.0
150

2.5
110A 100
2.0

50
1.5 55A

1.0 0
8 9 10 11 12 13 14 15 4 5 6 7 8 9 10 11 12 13 14 15
VGE - Volts VGE - Volts

© 2016 IXYS CORPORATION, All Rights Reserved

 IXXH110N65C4
Fig. 7. Transconductance Fig. 8. Gate Charge
90 16

80 TJ = - 40ºC VCE = 325V

14
I C = 110A
70 I G = 10mA
12

60 25ºC
g f s - Siemens

10

V GE - Volts
50
150ºC 8
40
6
30

4
20

10 2

0 0
0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180
I C - Amperes QG - NanoCoulombs

Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area

10,000 240

Cies 200
Capacitance - PicoFarads

1,000 160
I C - Amperes

Coes
120

100 80

Cres TJ = 150ºC
40 RG = 2Ω
f = 1 MHz dv / dt < 10V / ns

10 0
0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700
Fig. 11. Maximum Transient Thermal Impedance VCE - Volts
1
VCE - Volts

Fig. 11. Maximum Transient thermal Impedance

aaaa
0.3

0.1
Z(th)JC - K / W

0.01

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXXH110N65C4
Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance Collector Current
6 13 3.0 12

Eoff Eon
Eoff Eon
5 TJ = 150ºC , VGE = 15V 11 2.5 10
RG = 2Ω , VGE = 15V
VCE = 400V
VCE = 400V
4 9 2.0 8

Eoff - MilliJoules
E off - MilliJoules

E on - MilliJoules
I C = 110A

E on - MilliJoules
3 7 1.5 TJ = 150ºC 6

2 5 1.0 4
I C = 55A

TJ = 25ºC
1 3 0.5 2

0 1 0.0 0
2 4 6 8 10 12 14 16 55 60 65 70 75 80 85 90 95 100 105 110

RG - Ohms I C - Amperes

Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs.
Junction Temperature Gate Resistance
3.0 12 160 400

Eoff Eon 140 tfi td(off) 350

2.5 RG = 2Ω , VGE = 15V 10 TJ = 150ºC, VGE = 15V
VCE = 400V 120 VCE = 400V 300

t d(off) - Nanoseconds
2.0 8
t f i - Nanoseconds
Eon - MilliJoules

100 250
Eoff - MilliJoules

I C = 110A

1.5 6 80 I C = 110A 200

60 150
1.0 4 I C = 55A

40 100
I C = 55A
0.5 2
20 50

0.0 0 0 0
25 50 75 100 125 150 2 4 6 8 10 12 14 16
TJ - Degrees Centigrade RG - Ohms

Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current Junction Temperature
120 140 140 130

tfi td(off) 120

tfi td(off) 125
100 RG = 2Ω , VGE = 15V 130 RG = 2Ω , VGE = 15V
VCE = 400V VCE = 400V
100 120
t d(off) - Nanoseconds

t d(off) - Nanoseconds
t f i - Nanoseconds
t f i - Nanoseconds

80 120
80 115
TJ = 150ºC

I C = 55A, 110A
60 110
60 110
TJ = 25ºC
40 105

40 100
20 100

20 90 0 95
55 60 65 70 75 80 85 90 95 100 105 110 25 50 75 100 125 150
I C - Amperes TJ - Degrees Centigrade

© 2016 IXYS CORPORATION, All Rights Reserved

 IXXH110N65C4
Fig. 18. Inductive Turn-on Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance Collector Current
200 100 160 44

180 tri td(on) 90 tri td(on)

140 40
TJ = 150ºC, VGE = 15V RG = 2Ω , VGE = 15V
160 80
VCE = 400V VCE = 400V
120 36

t d(on) - Nanoseconds
t r i - Nanoseconds

t r i - Nanoseconds

t d(on) - Nanoseconds
140 70
TJ = 25ºC
120 60 100 32
I C = 110A

100 50 80 TJ = 150ºC 28

80 40
60 24
60 30
I C = 55A
40 20
40 20

20 10 20 16
2 4 6 8 10 12 14 16 55 60 65 70 75 80 85 90 95 100 105 110
RG - Ohms I C - Amperes

Fig. 20. Inductive Turn-on Switching Times vs.

Junction Temperature
200 60

tri td(on)
RG = 2Ω , VGE = 15V
160 50
VCE = 400V
t d(on) - Nanoseconds
t r i - Nanoseconds

120 40
I C = 110A

80 30

I C = 55A
40 20

0 10
25 50 75 100 125 150
TJ - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: IXX_110N65C4(E8-RZ43) 8-31-16