GenX3TM 600V IXGA48N60A3 VCES = 600V

IGBTs IXGP48N60A3 IC110 = 48A

IXGH48N60A3 VCE(sat) ≤ 1.35V
Ultra Low Vsat PT IGBTs for
up to 5kHz switching TO-263 (IXGA)

G
E
Symbol Test Conditions Maximum Ratings
C (Tab)
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220 (IXGP)

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC = 25°C 120 A G

CE C (Tab)
IC110 TC = 110°C 48 A
ICM TC = 25°C, 1ms 300 A TO-247 (IXGH)
SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 96 A
(RBSOA) Clamped Inductive Load VCE ≤ VCES
PC TC = 25°C 300 W
G
C
TJ -55 ... +150 °C E C (Tab)
TJM 150 °C
Tstg -55 ... +150 °C G = Gate C = Collector
TL Maximum Lead Temperature for Soldering 300 °C E = Emitter Tab = Collector
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FC Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. Features
Md Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
z
Optimized for Low Conduction Losses
TO-220 3.0 g
z
Square RBSOA
TO-247 6.0 g
z
High Current Handling Capability
z
International Standard Packages

Advantages

z
High Power Density
Symbol Test Conditions Characteristic Values z
Low Gate Drive Requirement
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 600 V
Applications
VGE(th) IC = 250μA, VCE = VGE 3.0 5.5 V
z
Power Inverters
ICES VCE = VCES, VGE = 0V 25 μA z
UPS
TJ = 125°C 250 μA z
Motor Drives
IGES VCE = 0V, VGE = ± 20V ±100 nA
z
SMPS
z
PFC Circuits
VCE(sat) IC = 32A, VGE = 15V, Note 1 1.18 1.35 V z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
z
Inrush Current Protection Circuits

© 2012 IXYS CORPORATION, All Rights Reserved DS99581D(03/12)

 IXGA48N60A3 IXGP48N60A3
IXGH48N60A3
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max. TO-247 Outline

gfs IC = 32A, VCE = 10V, Note 1 30 48 S

Cies 3190 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 175 pF
Cres 43 pF
Qg 110 nC
Qge IC = 32A, VGE = 15V, VCE = 0.5 • VCES 21 nC
Qgc 42 nC
td(on) 25 ns
tri Inductive Load, TJ = 25°C 30 ns
Eon IC = 32A, VGE = 15V 0.95 mJ
td(off) VCE = 480V, RG = 5Ω 334 ns 1 = Gate
2 = Collector
tfi Note 2 224 ns 3 = Emitter
Eoff 2.9 mJ
td(on) 24 ns
tri Inductive Load, TJ = 125°C 30 ns
Eon IC = 32A, VGE = 15V 1.97 mJ
td(off) VCE = 480V, RG = 5Ω 545 ns
tfi Note 2 380 ns
Eoff 5.6 mJ
RthJC 0.42 °C/W
RthCK TO-220 0.50 °C/W
TO-247 0.21 °C/W
TO-220 Outline

Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.

TO-263 Outline

Pins: 1 - Gate 2 - Collector

3 - Emitter

1 = Gate
2 = Collector
3 = Emitter
4 = Collector

IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXGA48N60A3 IXGP48N60A3
IXGH48N60A3

Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC

70
VGE = 15V VGE = 15V
300
13V 13V
60
11V

50 240 11V

IC - Amperes
IC - Amperes

9V
40
180

9V
30
120
7V
20

60
10
7V
0 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2 4 6 8 10 12 14
VCE - Volts VCE - Volts

Fig. 4. Dependence of VCE(sat) on

Fig. 3. Output Characteristics @ T J = 125ºC
Junction Temperature
70 1.4
VGE = 15V
13V VGE = 15V
60 1.3 I C = 64A
11V

50
VCE(sat) - Normalized

1.2
IC - Amperes

9V
40 1.1
I C = 32A
30 1.0
7V

20 0.9

10 0.8 I C = 16A

0 0.7
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150
VCE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance
2.8 200

TJ = 25ºC 180

2.4 160

140
I C = 64A
IC - Amperes
VCE - Volts

2.0 32A 120

16A
100

1.6 80 TJ = 125ºC
25ºC
60
- 40ºC
1.2 40

20

0.8 0
6 7 8 9 10 11 12 13 14 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGE - Volts VGE - Volts

© 2012 IXYS CORPORATION, All Rights Reserved

 IXGA48N60A3 IXGP48N60A3
IXGH48N60A3

Fig. 7. Transconductance Fig. 8. Gate Charge

70 16

14 VCE = 300V
60 TJ = - 40ºC
I C = 32A
25ºC
125ºC 12 I G = 10mA
50
g f s - Siemens

10

VGE - Volts
40
8
30
6

20
4

10 2

0 0
0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120
IC - Amperes QG - NanoCoulombs

Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area

10,000 100

90

80
Cies
Capacitance - PicoFarads

70
1,000
IC - Amperes

60

Coes 50

40
100
30
TJ = 125ºC
20 RG = 5Ω
Cres dv / dt < 10V / ns
f = 1 MHz 10

10 0
0 5 10 15 20 25 30 35 40 100 150 200 250 300 350 400 450 500 550 600 650
VCE - Volts VCE - Volts

Fig. 11. Maximum Transient Thermal Impedance

1
Z (th)JC - ºC / W

0.1

0.01
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds

IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions.
 IXGA48N60A3 IXGP48N60A3
IXGH48N60A3
Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance Collector Current
14 7 13 6
I C = 64A

12 6 Eoff Eon ----

11 5
RG = 5Ω , VGE = 15V
10 5 VCE = 480V
Eoff - MilliJoules

9 4

E on - MilliJoules
Eon - MilliJoules

Eoff - MilliJoules
Eoff Eon - ---
8 TJ = 125ºC , VGE = 15V 4

VCE = 480V 7 3
I C = 32A
6 3

5 TJ = 125ºC 2
4 2

2 1 3 1
I C = 16A
TJ = 25ºC
0 0 1 0
10 12 14 16 18 20 22 24 26 28 30 15 20 25 30 35 40 45 50 55 60 65
RG - Ohms IC - Amperes

Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs.
Junction Temperature Gate Resistance
13 6 520 850
12 tf i td(off) - - - -
Eoff Eon ---- 500 800
11 5 TJ = 125ºC, VGE = 15V
RG = 5Ω , VGE = 15V VCE = 480V
480 750
10 VCE = 480V I C = 64A

t d(off) - Nanoseconds
t f i - Nanoseconds

9 4 460 700
Eon - MilliJoules
E off - MilliJoules

I C = 64A
8
440 650
7 3
I C = 32A 420 16A 600
6

5 2 400 32A 550

4
380 16A 500
3 1 32A
360 450
2
I C = 16A 64A
1 0 340 400
25 35 45 55 65 75 85 95 105 115 125 0 3 6 9 12 15 18 21 24 27 30
TJ - Degrees Centigrade RG - Ohms

Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current Junction Temperature
500 650 480 650

tf i td(off) - - - -
450 600 440 600
RG = 5Ω , VGE = 15V
VCE = 480V
TJ = 125ºC
t d(off) - Nanoseconds

400 550
t d(off) - Nanoseconds

400 550
t f i - Nanoseconds

t f i - Nanoseconds

I C = 64A, 32A, 16A

350 500 360 500

tf i td(off) - - - -
300 RG = 5Ω , VGE = 15V 450 320 450
I C = 64A, 32A, 16A
VCE = 480V
250 400 280 400

200 TJ = 25ºC 350 240 350

150 300 200 300

15 20 25 30 35 40 45 50 55 60 65 25 35 45 55 65 75 85 95 105 115 125
IC - Amperes TJ - Degrees Centigrade

© 2012 IXYS CORPORATION, All Rights Reserved

 IXGA48N60A3 IXGP48N60A3
IXGH48N60A3
Fig. 18. Inductive Turn-on Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance Collector Current
100 56 70 28
tr i td(on) - - - -
90 52
TJ = 125ºC, VGE = 15V 60 25ºC < TJ < 125ºC 27
VCE = 480V
80 48

t d(on) - Nanoseconds
50 26

t d(on) - Nanoseconds
t r i - Nanoseconds

t r - Nanoseconds
70 I C = 64A 44
40 TJ = 25ºC 25
60 I C = 32A 40
30 24
50 36

20 23
40 32
TJ = 125ºC tr i td(on) - - - -
30 I C = 16A 28 10 RG = 5Ω , VGE = 15V 22
VCE = 480V
20 24 0 21
10 12 14 16 18 20 22 24 26 28 30 15 20 25 30 35 40 45 50 55 60 65
RG - Ohms IC - Amperes

Fig. 20. Inductive Turn-on Switching Times vs.

Junction Temperature
80 28
I C = 64A
70 27

tr i td(on) - - - -
t d(on) - Nanoseconds

60 26
t r i - Nanoseconds

RG = 5Ω , VGE = 15V
VCE = 480V
50 25

40 24
I C = 32A

30 23

I C = 16A
20 22

10 21
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade

IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions.

IXYS REF: G_48N60A3(56) 7-10-08-A

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IXGA48N60A3 IXGH48N60A3 IXGP48N60A3