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Numericals Part-3 Modified

Ed Pn Junction Numericals 3

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16 views

Numericals Part-3 Modified

Ed Pn Junction Numericals 3

Uploaded by

r170176
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Q.

In a non-degenerate bulk semiconductor with electron density n – 1016 cm3, the


value of EC  Efn = 200 meV, where EC and Efn denote the bottom of the conduction
band energy and electron Fermi level energy, respectively. Assume thermal voltage
as 26 meV and the intrinsic carrier concentration is 1010 cm3. For n = 0.5  1016
cm3, the closest approximation of the value of (EC  EFn), among the given options
is
(a) 226 meV
(b) 174 meV
(c) 218 meV
(d) 182 meV
Q. Consider two energy levels: E1, E eV above the Fermi level and E2, E eV below the
Fermi level. P1 and P2 are respectively the probabilities of E1 being occupied by an
electron and E2 being empty. Then
(a) P2 > P2
(b) P1 = P2
(c) P1 < P2
(d) P1 and P2 depend on number of free electrons
Q. An N-type semiconductor having uniform doping is biased as
shown in the figure.
N-type semiconductor

If EC is the lowest energy level of the conduction band, EV is the


highest energy level of the valance band and EF is the Fermi level,
which one of the following represents the energy band diagram for
the biased N- type semiconductor?
EC EC
(a) EF (b) EF
EV EV
EC EC
(c) EF (d) EF
EV
Q. A semiconductor crystal made with Ge, find the conductivity when
temperature is increased by 2oC?
Q. In the figure loge(pi) is plotted as a function of (1/T), where pi is the
intrinsic resistivity. Find the estimated slope?

logePi

I/T
O
Q. Si – device, @ 300oK
ni = 1010/cm3,
then @ x = x2,
Find hole concentration?
Energy
EC

Ei

EF
EG/3 EV

O X1 L/3 2L/3 L X
Q. If Si doped with boron with 1016/cm3 & ionize then if it is exposed to light such
that EHP’s are generated throughout volume of bar out the rate 1020/cm3/sec. If
the recombination life time is 100 sec intrinsic carrier is 1010/cm3, then
approximate product of steady state electron & hole concentrations d to light
exposure is ?
(a) 1032/ cm6
(b) 2  1020/cm6
(c) 2  1032/cm6
(d) 1020/cm6
Q. If P-type is of long direct band gap semiconductor, The equilibrium hole density
1017/cm3 & ni = 1010/cm3. Electron & hole diffusion lengths are 2 m & 1 m
respectively. The left side of bar (X = 0) is uniformly illuminated with a laser having
photon energy greater than band gap of the semiconductor. Excess electron-hole
pairs are generated only at x = 0 because of the laser. The steady state electron
density at x = 0 is 1014/cm3 due to laser illumination. Under these conditions, by
ignoring electric field, the closest approximation of the steady state electron
density at x = 2m is __________?
Q. An n-type silicon sample is uniformly illuminated with light which
generates 1020 electron hole pairs cm3 per second. The minority
carrier lifetime in the sample is 1 s. In the steady state, the hole
concentration in the sample is approximately 10x, where x is integer.
The value of x is _________.
Note: Examiner forget to mention that 10x/cm3
Q. At T = 300 K, the band gap and the intrinsic carrier concentration of GaAs are
1.42eV and 106cm3, respectively. In order to generate electron hole pairs in GaAs,
which one of the wavelength (c) ranges of incident radiation, is most suitable?
(Given that: Planck’s constant is 6.62  1034 j-s, velocity of light is 3  1010 cm/s
and charge of electron is 1.6  1019C)
(a) 0.42 m < c < 0.87 m
(b) 0.87 m < c < 1.42 m
(c) 1.42 m < c < 1.62 m
(d) 1.62 m < c < 6.62 m
Q. A thin P-type silicon sample is uniformly illuminated with light which
generates excess carriers. The recombination rate is directly
proportional to
(a) The minority carrier mobility
(b) The minority carrier recombination lifetime
(c) The majority carrier concentration
(d) The excess minority carrier concentration
Q. Under low level injection assumption, the injection minority carrier
current for an extrinsic semiconductor is essentially the
(a) Diffusion current
(b) Drift current
(c) Recombination current
(d) Induced current

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