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Hall Effect

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18 views

Hall Effect

Hello Hello Hello Hello Hello Hello Hello Hello Hello

Uploaded by

24x51a32a3
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as ODT, PDF, TXT or read online on Scribd
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The Hall Effect is a phenomenon that occurs when a current-carrying

conductor or semiconductor is placed in a magnetic field. This causes a


voltage, called the Hall voltage, to develop across the conductor or
semiconductor perpendicular to both the current and the magnetic field.

 Here are the points explaining the Hall Effect:


 * Consider a semiconductor slab of thickness ‘d’ and width ‘w’.
 * A current ‘I’ is flowing along the ‘x’ direction.
 * A magnetic field ‘B’ is applied along the ‘z’ direction.
 * Due to the magnetic field, the charge carriers inside the semiconductor
experience a force.
 * This force causes the electrons to accumulate on one side of the slab
and the holes to accumulate on the other side.
 * This creates an electric field across the slab, which opposes the
magnetic force.
 * The Hall voltage ‘VH’ is the potential difference between the two sides
of the slab.
 * The Hall electric field ‘EH’ is the electric field across the slab.
 * The Hall coefficient ‘RH’ is defined as the ratio of the Hall electric field
to the product of the current density ‘J’ and the magnetic field ‘B’:
 RH = EH / (JB)
 * The current density ‘J’ is the current ‘I’ divided by the cross-sectional
area of the slab ‘A’:
 J=I/A
 * The cross-sectional area of the slab ‘A’ is the product of the width ‘w’
and the thickness ‘d’:
 A=w*d
 * Therefore, the Hall coefficient can be written as:
 RH = EH / (I * B / (w * d))
 RH = EH * w * d / (I * B)
 * The Hall voltage ‘VH’ is the product of the Hall electric field ‘EH’ and
the width ‘w’:
 VH = EH * w
 * Therefore, the Hall coefficient can be written as:
 RH = VH * d / (I * B)
 * The Hall voltage ‘VH’ can be measured experimentally.
 * The current ‘I’ and the magnetic field ‘B’ are known.
 * The thickness ‘d’ of the slab can be measured.
 * Therefore, the Hall coefficient ‘RH’ can be calculated.
 * The Hall coefficient ‘RH’ is related to the carrier concentration ‘n’ and
the carrier mobility ‘mu’ by the equation:
 RH = -1 / (n * e)
 * where ‘e’ is the charge of an electron.
 * The carrier concentration ‘n’ is the number of charge carriers per unit
volume.
 * The carrier mobility ‘mu’ is the average drift velocity of the charge
carriers per unit electric field.
 * Therefore, the Hall effect can be used to measure the carrier
concentration and mobility of semiconductors.
 * The Hall effect has many applications, including:
 * Measuring magnetic fields
 * Measuring current
 * Determining the type of charge carriers in a material
 * Measuring the carrier concentration and mobility of semiconductors
 * Fabricating Hall effect sensors

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