1N1...A, 1N36..

A Series
Vishay High Power Products

Medium Power
Silicon Rectifier Diodes, 12 A
FEATURES
• Voltage ratings from 50 to 1000 V
RoHS
• High surge capability COMPLIANT

• Low thermal impedance

• High temperature rating

• Can be supplied as JAN and JAN-TX devices in

accordance with MIL-S-19500/260
DO-203AA (DO-4) • RoHS compliant

PRODUCT SUMMARY
IF(AV) 12 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
12 (1) A
IF(AV)
TC 150 (1) °C
50 Hz 230
IFSM A
60 Hz 240 (1)
50 Hz 260
I2 t A2 s
60 Hz 240
TC - 65 to 200 °C
VRRM Range 50 to 1000 (1) V
Note
(1) JEDEC registered values

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM VRSM, MAXIMUM
VR(RMS), MAXIMUM RMS VRM, MAXIMUM DIRECT
REPETITIVE PEAK NON-REPETITIVE PEAK
REVERSE VOLTAGE REVERSE VOLTAGE
TYPE NUMBER (2) REVERSE VOLTAGE REVERSE VOLTAGE
V V
V V
TC = - 65 °C TO 200 °C TC = - 65 °C TO 200 °C TC = - 65 °C TO 200 °C TC = - 65 °C TO 200 °C
1N1199A 50 (1) 35 (1) 100 (1) 50 (1)
1N1200A 100 (1) 70 (1) 200 (1) 100 (1)
1N1201A 150 (1) 105 (1) 300 (1) 150 (1)
1N1202A 200 (1) 140 (1) 350 (1) 200 (1)
1N1203A 300 (1) 210 (1) 450 (1) 300 (1)
1N1204A 400 (1) 280 (1) 600 (1) 400 (1)
1N1205A 500 (1) 350 (1) 700 (1) 500 (1)
1N1206A 600 (1) 420 (1) 800 (1) 600 (1)
1N3670A 700 (1) 490 900 (1) 700 (1)
1N3671A 800 (1) 560 1000 (1) 800 (1)
1N3672A 900 (1) 630 1100 (1) 900 (1)
1N3673A 1000 (1) 700 1200 (1) 1000 (1)
Notes
(1) JEDEC registered values
(2) Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA

Document Number: 93493 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 24-Jun-08 1
1N1...A, 1N36..A Series
Vishay High Power Products Medium Power
Silicon Rectifier Diodes, 12 A

FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
12 (1) A
Maximum average forward current
IF(AV) 180° sinusoidal conduction
at case temperature 150 (1) °C
Half cycle 50 Hz sine wave
Following any rated load 230
or 6 ms rectangular pulse
condition and with rated
Half cycle 60 Hz sine wave
VRRM applied 240 (1)
Maximum peak one cycle or 5 ms rectangular pulse
IFSM A
non-repetitive surge current Half cycle 50 Hz sine wave
Following any rated load 275
or 6 ms rectangular pulse
condition and with VRRM
Half cycle 60 Hz sine wave
applied following surge = 0 285
or 5 ms rectangular pulse

t = 10 ms With rated VRRM applied 260

Maximum I2t for fusing following surge,
t = 8.3 ms initial TJ = 200 °C 240
I2 t A2 s
Maximum I2tfor individual t = 10 ms With VRRM = 0 following 370
device fusing t = 8.3 ms surge, initial TJ = 200 °C 340
Maximum I2√t
for individual
I2√t (2) t = 0.1 to 10 ms, VRRM = 0 following surge 3715 A2√s
device fusing
Maximum forward voltage drop VFM IF(AV) = 12 A (38 A peak), TC = 25 °C 1.35 (1) V
VRRM = 50 3.0 (1)

VRRM = 100 2.5 (1)

VRRM = 150 2.25 (1)
VRRM = 200 2.0 (1)
VRRM = 300 1.75 (1)

Maximum average VRRM = 400 1.5 (1)

IR(AV) (3) Maximum rated IF(AV) and TC mA
reverse current VRRM = 500 1.25 (1)
VRRM = 600 1.0 (1)
VRRM = 700 0.9 (1)
VRRM = 800 0.8 (1)
VRRM = 900 0.7 (1)
VRRM = 1000 0.6 (1)
Notes
(1) JEDEC registered values
(2) I2t for time t = I2√t x √t
x x
RM) under same conditions ≈ 2 x rated IR(AV)
(3) Maximum peak reverse current (I

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93493

2 Revision: 24-Jun-08
 1N1...A, 1N36..A Series
Medium Power Vishay High Power Products
Silicon Rectifier Diodes, 12 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating case and
TC, TStg - 65 to 200 (1) °C
storage temperature range
Maximum internal thermal
RthJC DC operation 2.0 (1)
resistance, junction to case
°C/W
Thermal resistance,
RthCS Mounting surface, smooth, flat and greased 0.5
case to sink
minimum 1.36 (12)
Torque applied to nut; non-lubricated threads
maximum 1.69 (15)
minimum 1.07 (9.45) N·m
Mounting torque Torque applied to nut; lubricated threads
maximum 1.30 (11.55) (lbf · in)

minimum 1.17 (10.35)

Torque applied to device case; lubricated threads
maximum 1.43 (12.65)
7.0 g
Approximate weight
0.25 oz.
Case style JEDEC DO-203AA (DO-4)
Note
(1) JEDEC registered values

Document Number: 93493 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 24-Jun-08 3
1N1...A, 1N36..A Series
Vishay High Power Products Medium Power
Silicon Rectifier Diodes, 12 A

Fig. 1 - Average Forward Current vs. Fig. 4 - Maximum Forward Voltage vs. Forward Current
Maximum Allowable Case Temperature

Fig. 2 - Maximum Low Level Forward Power Loss vs. Fig. 5 - Maximum Transient Thermal Impedance,
Average Forward Current Junction to Case vs. Pulse Duration

Fig. 3 - Maximum High Level Forward Power Loss vs. Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.
Average Forward Current Number of Current Pulses

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95311

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93493

4 Revision: 24-Jun-08
 Outline Dimensions
Vishay Semiconductors

DO-203AA (DO-4)

DIMENSIONS in millimeters (inches)

3.30 (0.13) 0.8 ± 0.1

4.00 (0.16) (0.03 ± 0.004)
+ 0.3
2 0
+ 0.01
(0.08 0)

5.50 (0.22) MIN. R 0.40

Ø 1.80 ± 0.20 R (0.02)
(Ø 0.07 ± 0.01)

20.30 (0.80) MAX.

10.20 (0.40) Ø 6.8 (0.27)

MAX.
3.50 (0.14)

11.50 (0.45)
10.70 (0.42)

10/32" UNF-2A
For metric devices: M5 x 0.8

11 (0.43)

Document Number: 95311 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 30-Jun-08 1
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Revision: 12-Mar-12 1 Document Number: 91000