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Title: Study of BJT Biasing Circuit – Fixed Bias and Self-Bias Circuits.

Abstract:
BJT biasing circuits are essential for stable operation in amplifier and switching applications. This study
focuses on two primary techniques: fixed bias and self-bias circuits. Fixed bias offers simplicity but suffers
from poor thermal stability and sensitivity to transistor parameter variations. In contrast, self-bias uses a
resistor-feedback network for improved thermal stability and resistance to component variations through
negative feedback. The analysis compares these circuits in terms of stability, reliability, and complexity,
providing guidance on selecting suitable biasing methods. Experimental and theoretical findings support the
discussion, offering valuable insights into BJT biasing fundamentals.[1]
Theory:
BJTs are crucial in amplification and switching applications, requiring proper biasing to ensure a stable Qpoint
and reliable operation. Among biasing methods, fixed bias is simple but lacks thermal stability and is sensitive to
parameter variations, while self-bias offers enhanced stability through a resistor-feedback network. This study
examines the design, performance, and trade-offs of fixed and self-bias circuits, providing insights into their
strengths, limitations, and applications.[1]
The fixed-bias circuit of Fig. 1 provides a relatively straightforward and simple introduction to transistor dc bias
analysis. Even though the network employs a npn transistor, the equations and calculations apply equally well to
a pnp transistor configuration merely by changing all current directions and voltage polarities. For the dc
analysis the network can be isolated from the indicated ac levels by replacing the capacitors with an open circuit
equivalent. In addition, the dc supply VCC can be separated into two supplies (for analysis purposes only) as
shown in Fig. 2 to permit a separation of input and output circuits. It also reduces the linkage between the two to
the base current IB. The separation is certainly valid, as we note in Fig. 2 that VCC is connected directly to RB
and RC just as in Fig. 1. [2]

Figure 1: Fixed-bias circuit. [2] Figure 2: DC equivalent of Fig. 1. [2]


Figure 3: Base-emitter loop. [2] Figure 4: Collector-emitter loop. [2]

Consider first the base–emitter circuit loop of Fig. 3. Applying Kirchhoff’s voltage equation in the clockwise
direction for the loop, we obtain

Solving the equation for the current IB will result in the following:
V cc −V BE
I B=
RB
Applying Kirchhoff’s voltage law in the clockwise direction around the indicated closed loop of Fig. 4 will result in the
following:

The dc bias network of Fig. 5 contains an emitter resistor to improve the stability level over that of the fixed
bias configuration. Applying Kirchhoff’s voltage law around the indicated loop in the clockwise direction
will result in the following equation:
+VCC- I B RB -V BE- I E R E=0
I E =(+1)I B
We know that, +VCC- I B RB -V BE-(+1 ¿ I B R E =0

Substituting for IE, we get, I B=


V cc −V BE
R B +(+1)R E

Apparatus:
 BJT (2N2222, C828, BD135)
 Resistance R=22KΩ, RC= 0.47KΩ, RE = 0.56KΩ, RB,POT = 0-500 KΩ (Potentiometer)
 Project Board
 DC milliammeter (0-50 mA)
 DC microammeter (0-500 A)
 Multimeter
 Connecting Leads

Precaution:
 A transistor should never be removed or inserted into a circuit while voltage is applied.
 A replacement transistor should be placed in the circuit in the correct direction.
 Transistors are sensitive and can be damaged by electrical overloads, heat, humidity, and radiation.
Damage often happens when incorrect polarity voltage is applied to the collector circuit or when
excessive voltage is applied to the input circuit.
 One common cause of transistor damage is electrostatic discharge from the human body when the
device is handled.
 The applied voltage and current should not exceed the maximum rating of the transistor.
 Changes to the components or their properties should be made by turning off the power or
stopping the simulation.
Experimental Procedures:
1. The actual values of the base and collector resistors were measured.
2. The terminals of the transistor were identified, and the value of Beta (β) was recorded.
3. The circuit was connected, and the microammeter and milliammeter were connected as shown in
Fig. 4 (a).
4. The multimeter (in voltmeter mode) was connected to measure the base resistance voltage (VB)
and input voltage (VBE).
5. The DC power supply was turned on with the voltage control knob set to 0 V, and the collector
supply voltage, VCC, was set to 15 V.
6. The 500 kΩ potentiometer was adjusted until the collector-to-emitter voltage, VCE, was
approximately equal to half of the collector supply voltage, VCC (i.e., VCE = VCC/2).
7. The collector-to-emitter voltage, VCE, base-to-emitter voltage, VBE, base current, IB, and
collector current, IC, were measured. The base current, IB, was calculated from the collector
current, IC, and recorded in Table 1.
8. The first transistor was replaced with the second one (having a different value of β), and steps 6-7
were repeated.
9. The self-bias circuit shown in Fig. 4 (b) was constructed.
10. The actual values of the base, emitter, and collector resistors were measured, and steps 2-8 were
repeated. In step 7, the emitter current, IE, was measured.
11. Images of the hardware circuit diagrams were recorded.
12. The DC power supply was turned off.

C ircui t Diagram:
Table 1 Data for the measurement of various bias circuit and transistor parameters

Transistor β VCE VBE IB IC IE


Fig. 4 (a) Small 220 7.5 0.65 0.003 0.663 0.663
Large 306 5.25 0.69 0.0032 0.975 0.98
% of 30 6.15 6.67 47.06 47.81
Change
Fig. 4 (b) Small 220 7.5 0.64 0.003 0.651 0.654
Large 306 5.83 0.67 0.0031 0.950 0.95
% of 22.27 4.68 3.33% 45.9 45.26
Change

Simulation:

Fig:Simulation for 4(a) when β=220 Fig:Simulation for 4(a) when β=306
Fig:Simulation for 4(b) when β=220 Fig:Simulation for 4(b) when β=306

Discussion:

• In this experiment, both fixed-bias and self-bias BJT circuits were analysed to determine the stability of
the operating point (Q-point) concerning variations in β (current gain).
• From the experimental data and simulation results, we observed notable differences in the performance of
the circuits due to changes in β. Specifically, the fixed-bias circuit showed significant sensitivity to
variations in β, resulting in larger deviations in collector current (IC) and collector-emitter voltage (VCE).
On the other hand, the self-bias circuit exhibited improved stability, with smaller changes in IC and VCE
as β varied, demonstrating its advantage in providing a more stable operating point.
• This stability is crucial for maintaining consistent amplifier performance, as the Q-point directly
influences the linearity and efficiency of the transistor's operation. The self-bias circuit, with its feedback
mechanism, helps to counteract the effects of β variation and temperature changes, maintaining the
transistor in its active region.
• While the experimental results closely matched the simulation data, slight discrepancies were observed,
likely due to real-world factors such as component tolerances and parasitic effects not accounted for in the
simulations. These differences underscore the importance of considering such factors when designing and
implementing BJT circuits in practical applications.

Conclusion:
In conclusion, both fixed bias and self-bias circuits have their advantages and limitations. Fixed bias is simple
and cost-effective but lacks thermal stability and sensitivity to variations. Self-bias offers improved stability
and reliability, making it suitable for more demanding applications. The selection between the two methods
depends on the specific requirements of the circuit, with self-bias being the preferred choice for applications
requiring enhanced performance and stability.

References:
[1] Robert L. Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory, 9th Edition, 2007-2008
[2] Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, Saunders College Publishing, 3rd ed., ISBN:
0-03-051648-X, 1991.
[3] American International University–Bangladesh (AIUB) Electronic Devices Lab Manual.
[4] David J. Comer, Donald T. Comer, Fundamentals of Electronic Circuit Design, John Wiley & Sons
Canada, Ltd.,ISBN: 0471410160, 2002.
[5] J. Keown, ORCAD PSpice and Circuit Analysis, Prentice Hall Press (2001)

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