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2SB1587 - fp1016

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158 views

2SB1587 - fp1016

Uploaded by

serking3003
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Darlington Power Transistor 2SB1587

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min)
·High DC Current Gain-
: hFE= 5000( Min.) @(IC= -6A, VCE=- 4V)
·Low Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ (IC= -6A, IB= -6mA)
·Complement to Type 2SD2438

APPLICATIONS
·Designed for audio, series regulator and general
purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage -160 V

VCEO Collector-Emitter Voltage -150 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current-Continuous -8 A

IB Base Current-Continuous -1 A

Collector Power Dissipation


PC 75 W
@TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

isc website：www.iscsemi.cn 1
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Darlington Power Transistor 2SB1587

ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 -150 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 6mA -2.5 V

VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 6mA -3.0 V

ICBO Collector Cutoff Current VCB= 160V; IE= 0 -100 μA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 -100 μA

hFE DC Current Gain IC= 6A; VCE= 4V 5000

COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 85 pF

fT Current-Gain—Bandwidth Product IE= -1A; VCE= 12V 65 MHz

Switching Times

ton Turn-on Time 0.7 μs

VCC= 60V, RL= 10Ω,


tstg Storage Time 3.6 μs
IC= 6A; IB1= -IB2= 6mA,

tf Fall Time 0.9 μs

 hFE Classifications

O P Y

5000-12000 6500-20000 15000-30000

isc website：www.iscsemi.cn 2

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