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10 views

2SC3852

Uploaded by

ahumakynewage
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC3852

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·DC Current Gain-
: hFE= 200(Min)@ IC= 0.5A

APPLICATIONS
·Driver for solenoid and motor, series regulator and
general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 80 V

VCEO Collector-Emitter Voltage 60 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current-Continuous 3 A

IB Base Current-Continuous 1 A

Collector Power Dissipation


PC 25 W
@TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC3852

ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 60 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 50mA 0.5 V

ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA

IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA

hFE DC Current Gain IC= 0.5A; VCE= 4V 200

COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF

fT Current-Gain—Bandwidth Product IE= -0.2A; VCE= 12V 15 MHz

Switching Times

ton Turn-On Time 0.8 μs

IC= 1A; IB1= 15mA; IB2= -30mA;


tstg Storage Time 3.0 μs
VCC= 20V; RL= 20Ω

tf Fall Time 1.2 μs

isc Website：www.iscsemi.cn 2

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