ST L4949E
ST L4949E
ST L4949E
BLOCK DIAGRAM
VZ VOUT CT
VS PREREGULATOR 5V
2µ
RES
+
2V
REG RESET
VS
SO
SI
1.23V 1.23V
REF SENSE GND
D96AT219
THERMAL DATA
Symbol Description Minidip SO-8 SO20L Unit
Rth j-amb Thermal Resistance Junction-ambient Max 100 200 50 °C/W
Rth j-pins Thermal Resistance Junction-pins Max 15 °C/W
TJSD Thermal Shutdown Junction temperature 165 °C
PIN CONNECTIONS
VZ 1 20 SI
CT 2 19 VS
N.C. 3 18 N.C.
VS 1 8 VOUT GND 4 17 GND
SI 2 7 SO GND 5 16 GND
VZ 3 6 RES GND 6 15 GND
CT 4 5 GND
GND 7 14 GND
D95AT217
N.C. 8 13 N.C.
N.C. 9 12 VOUT
RES 10 11 SO
D95AT218
MINIDIP/SO8
SO20
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L4949E
ELECTRICAL CHARACTERISTICS (VS = 14V; -40°C < Tj < 125°C unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit
VO Output Voltage TJ = 25°C; IO = 1mA 4.95 5 5.05 V
VO Output Voltage 6V < VIN < 28V, 1mA < IO < 50mA 4.90 5 5.10 V
VO Output Voltage VIN = 40V; 4.75 5.25 V
T < 1s 5mA < IO < 100mA
VDP Dropout Voltage IO = 10mA 0.1 0.25 V
IO = 50mA 0.2 0.4 V
IO = 100mA 0.3 0.5 V
VIO Input to Output Voltage VIN = 4V, IO = 35mA 0.4 V
Difference in Undervoltage
Condition
Iouth ** Max Output Leakage VIN = 25V, VO = 5.5V 20 50 80 µA
VOL Line Regulation 6V < VIN < 28V; IO = 1mA 20 mV
VOLO Load Regulation 1mA < IO < 100mA 30 mV
ILIM Current Limit VO = 4.5V 105 200 400 mA
VO = 4.5V, T J = 25°C 120 400 mA
VO = 0V (note 1) 100 mA
IQSE Quiescent Current IO = 0.3mA; TJ < 100°C 200 300 µA
IQ Quiescent Current IO = 100mA 5 mA
** With this test we guarantee that with no output current the output voltage will not exceed 5.5V
RESET
VRT Reset Thereshold Voltage VO -0.5V V
VRTH Reset Thereshold Hysteresis 50 100 200 mV
tRD Reset Pulse Delay CT = 100nF; TR ≥100µs 55 100 180 ms
VRL Reset Output Low Voltage RRES = 10KΩ to VO VS ≥ 1.5V 0.4 V
IRH Reset Output High Leakage Current VRES = 5V 1 µA
VCTth Delay Comparator Thereshold 2 V
VCTth, hy Delay Comparator Thereshold 100 mV
Hysteresis
SENSE
Vst Sense Low Thereshold 1.16 1.23 1.35 V
Vsth Sense Thereshold Hysteresis 20 100 200 mV
VSL Sense Output Low Voltage VSI ≤ 1.16V; VS ≥ 3V 0.4 V
RSO = 10KΩ to VO
ISH Sense Output Leakage VSO = 5V; VSI ≥ 1.5V 1 µA
ISI Sense Input Current VSI = 0 -20 -8 -3 µA
PREREGULATOR
VZ Preregulator Output Voltage IZ = 10µA 4.5 5 6 V
IZ Preregulator Output Current 10 µA
Note 1: Foldback characteristic
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L4949E
APPLICATION CIRCUIT
VOUT
VZ (optional) CT
VBAT VS
PREREGULATOR 5V
2µ RES
+
VOUT
2V
REG RESET
VS
SI
SO
1.23V 1.23V
REF SENSE GND
D96AT219
FUNCTIONAL DESCRIPTION
The L4949E is a monolithic integrated voltage
regulator, based on the STM modular voltage
regulator approch. Several outstanding features
and auxiliary functions are implemented to meet
the requirements of supplying microprocessor
systems in automotive applications. Nevertheless,
it is suitable also in other applications where the
present functions are required. The modular ap-
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L4949E
CT • 2V
tRD =
2µA
Sense Comparator
The sense comparator compares an input signal
with an internal voltage reference of typical 1.23V.
The use of an external voltage divider makes this
comparator very flexible in the application.
It can be used to supervise the input voltage
either before or after the protection diode and to
give additional informations to the microprocessor
like low voltage warnings.
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L4949E
Figure 4
Figure 5
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L4949E
mm inch
DIM. OUTLINE AND
MIN. TYP. MAX. MIN. TYP. MAX. MECHANICAL DATA
A 3.32 0.131
a1 0.51 0.020
D 10.92 0.430
e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300
F 6.6 0.260
I 5.08 0.200
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L4949E
mm inch
DIM. OUTLINE AND
MIN. TYP. MAX. MIN. TYP. MAX.
MECHANICAL DATA
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45° (typ.)
D (1) 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F (1) 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024 SO8
S 8 ° (max.)
8/10
L4949E
mm inch
DIM. OUTLINE AND
MECHANICAL DATA
MIN. TYP. MAX. MIN. TYP. MAX.
e 1.27 0.050
L
h x 45˚
B e K A1 C
H
20 11
1 0
1
SO20MEC
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L4949E
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