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Lab # 001 - Best lab report

Electronic Devices (Riphah International University)

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24/09/2019

Lab Title :-
To obtain the V-I characteristics curve of a Diode.

Objective :-
To study and verify the Voltage-Current relation in Diodes by applying a voltage across it
and measuring the corresponding current flowing through it.

Introduction Of Theory:-
Diodes:
A diode is a two-terminal electronic component that conducts current primarily in one
direction; it has low resistance in one direction, and high resistance in the other.

Fig # 01
Biasing of PN junction Diode
Applying external D.C. voltage to any electronic device is called biasing. There is no
current in the unbiased PN junction at equilibrium.
Depending upon the polarity of the D.C. voltage externally applied to diode ,the biasing is classified
as Forward biasing and Reverse biasing.

Forward bias operation:

The P-N junction supports uni-directional current flow. If +ve
terminal of the input supply is connected to anode (P-side) and –ve terminal of the input supply is
connected the cathode. Then diode is said to be forward biased. In this condition the height of the
potential barrier at the junction is lowered by an amount equal to given forward biasing voltage. Both
the holes from p-side and electrons from n-side cross the junction simultaneously and constitute a
forward current from n-side cross the junction simultaneously and constitute a forward current .
Assuming current flowing through the diode to be very large, the diode can be approximated as
short- circuited switch. Diode offers a very small resistance called forward resistance (few ohms).

Fig # 02

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Reverse bias operation:

If negative terminal of the input supply is connected to anode (p-
side) and –ve terminal of the input supply is connected to cathode (n-side) then the diode is said to be
reverse biased. In this condition an amount equal to reverse biasing voltage increases the height of
the potential barrier at the junction. Both the holes on P-side and electrons on N-side tend to move
away from the junction there by increasing the depleted region. However the process cannot continue
indefinitely, thus a small current called reverse saturation current continues to flow in the diode. This
current is negligible; the diode can be approximated as an open circuited switch
it offers a very high resistance called reverse resistance (few Kilo ohms).

Fig # 03

Cut in voltage of a diode:

Cut-in voltage or knee voltage or threshold voltage is the minimum voltage( in
forward bias condition)after which the diode current rises rapidly and diode is said to be conducting
for silicon it's 0.7 volt and for germanium it's 0.3 volt.

Fig # 04

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Circuit Diagram :-

Fig # 05

Practical Work :-
Equipment :-
 Resistor
 DMM
 Diode
 Connecting Wires
 Breadboard

Procedure :-
Forward Bias Condition:
1. Connect the circuit as shown in Fig.1(PN Junction diode with milli . .
. ammeter in series with the diode).
2. Initially vary Regulated Power Supply (RPS) voltage Vs in steps of 2 V.
3. Tabulate different forward currents obtained for different forward voltages.
4. Plot the V-I characteristics and calculate the resistance levels .

Reverse Bias Condition:

1. Connect the circuit as shown in Fig.2 .
2. Vary Vs in the Regulated Power Supply (RPS) gradually in steps of 2V.
3. Tabulate different reverse currents obtained for different reverse voltages.
4. Plot the V-I characteristics and calculate the resistance levels .

Tabular & Graphical Data :-

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Forward Bias Condition:

Table # 01
Sr. No. Vin (V) Vd (V) Id (mA)
1 0 0 0
2 2 0.588 1.42
3 4 0.633 3.44
4 6 0.655 5.34
5 8 0.669 7.41
6 10 0.681 9.37
7 12 0.691 11.38
8 14 0.698 13.40
9 16 0.704 15.57
10 18 0.710 17.73
11 20 0.714 19.91

Graph # 01

Reverse Bias Condition:

Table # 02
Sr. No. Vin (V) Vd (V) Id (mA)

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1 0 0 0
2 2 2 0
3 4 4 0
4 6 6 0
5 8 8 0
6 10 10 0
7 12 12 0
8 14 14 0
9 16 16 0
10 18 18 0
11 20 20 0

Graph # 02

Discussion of Results :-
In forward biased when the positive terminal of the battery attached to the p-type
region the holes are attracted toward positive charge and electron goes toward the depletion
region. The negative terminal of the battery is attached to the n-type region the negative ion
moves toward the depletion region. In that case the depletion region becomes smaller, hence the
flow of current starts. In reverse biased the positive terminal attached to the n-type and the
negative terminal attached to the p-type. In that case depletion region becomes greater because
the electron moves toward p-type and the positive ion moves towards the n-type. Therefore no
current flows in reverse biased.
If the external voltage applied on the silicon diode is less than 0.7 volts, the silicon
diode allows only a small electric current. However, this small electric current is considered as
negligible. When the external voltage applied on the silicon diode reaches 0.7 volts, the p-n
junction diode starts allowing large electric current through it. At this point, a small increase in
voltage increases the electric current rapidly. The forward voltage at which the silicon diode

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starts allowing large electric current is called cut-in voltage. The cut-in voltage for silicon diode
is approximately 0.7 volts.

Conclusion :-
This experiment is about to investigate the behavior of diode and analysis
how it work. By observing the behavior of diode on different applied voltages and find the results
and calculation for its practical proves.
1) It is in forward-biased when its resistance has a smaller value while it is in reverse-biased
when its resistance has a larger value.
2) The forward-biased voltage of diode is its barrier potential while the reverse-biased voltage
of diode is infinite over range which shows that the diode is in healthy condition.
3) This experiment proved that diode controls the direction of the current.

References :-
 http://datasheet.octopart.com/1N4007-Diotec-datasheet-118605333.pdf

 https://www.physics-and-radio-electronics.com/electronic-devices-and-circuits/semiconductor-
diodes/vicharacteristicsofdiode.html

 https://electric-shocks.com/forward-and-reverse-bias-of-diode-explained-by-v-i-characteristic-
curves/

 https://www.electronics-tutorials.ws/blog/i-v-characteristic-curves.html

 https://www.quora.com/What-is-the-cut-in-voltage-of-a-diode

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