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Bjt_Iv_Report

The lab report investigates the current-voltage characteristic of a 2N2222 BJT in a common-emitter configuration, measuring the relationship between collector current (IC) and collector-emitter voltage (VCE) for various base voltages (VBB). The experiment confirmed the three operating regions of the BJT: cut-off, active, and saturation, with consistent current gain in the active region. Results aligned with theoretical expectations, demonstrating the BJT's behavior as an amplifier and switch.

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2 views

Bjt_Iv_Report

The lab report investigates the current-voltage characteristic of a 2N2222 BJT in a common-emitter configuration, measuring the relationship between collector current (IC) and collector-emitter voltage (VCE) for various base voltages (VBB). The experiment confirmed the three operating regions of the BJT: cut-off, active, and saturation, with consistent current gain in the active region. Results aligned with theoretical expectations, demonstrating the BJT's behavior as an amplifier and switch.

Uploaded by

Lại An
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Lab Report: Current-Voltage Characteristic of BJT (2N2222)

1. Objective
The purpose of this experiment is to investigate the current-voltage (I-V) characteristic of a
bipolar junction transistor (BJT) in a common-emitter amplifier configuration. The
experiment aims to measure and analyze the relationship between the collector current (IC)
and the collector-emitter voltage (VCE) for different base voltages (VBB), while using a base
resistor R_B = 80kΩ.

2. Equipment and Components


- NPN Bipolar Junction Transistor (BJT) 2N2222
- Resistor R_B = 80kΩ
- DC power supply
- Multimeter
- Breadboard and connecting wires

3. Experimental Setup
The circuit was set up according to the common-emitter amplifier circuit shown in Figure 1
of the lab handout. The following parameters were used:
- VBB (input voltage) = 1V, 2V, 3V, 4V, and 5V
- VCC (collector supply voltage) = 10V
- R_B = 80kΩ
- VCE varied from 9V to 0V in steps

4. Procedure
1. The circuit was assembled on a breadboard with the specified components.
2. The input voltage VBB was set to 3V initially.
3. The collector-emitter voltage VCE was varied from 9V down to 0V in steps.
4. For each value of VCE, the base current IB and the collector current IC were measured
using a multimeter.
5. The common-emitter current gain β = IC/IB was calculated.
6. Steps 2–5 were repeated for VBB values of 5V, 4V, 2V, and 1V.
7. The collected data was used to plot the I-V characteristic curve.

5. Results and Analysis


- The measured values of IC were recorded for each VCE at different base voltages.
- The I-V characteristic curve demonstrated the three main operating regions of the BJT:
- Cut-off Region: When VCE is very low, IC is nearly zero.
- Active Region: IC increases proportionally with IB, showing a nearly linear relationship.
- Saturation Region: When VCE is further decreased, IC stabilizes.
- The common-emitter current gain β was found to be relatively consistent in the active
region.
6. Conclusion
This experiment successfully verified the current-voltage characteristics of a BJT. The
relationship between IC and VCE was observed, confirming the different operating regions
of the transistor. The measured values aligned with theoretical expectations, demonstrating
the behavior of the BJT as an amplifier and switch.

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