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American International University-Bangladesh (Aiub) : Faculty of Engineering

The document describes a lab report on studying transistor characteristics in a common emitter amplifier circuit. It provides background on bipolar junction transistors and describes the circuit configuration used. Tables show the input characteristics for different base voltages and collector voltages. Output characteristics are also shown for varying collector currents and voltages. Graphs are drawn of the input and output characteristics and a Q-point is located from the results. The conclusion discusses determining the input and output characteristics to identify the transistor properties in the circuit.

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Rifat Rudro
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0% found this document useful (0 votes)
44 views

American International University-Bangladesh (Aiub) : Faculty of Engineering

The document describes a lab report on studying transistor characteristics in a common emitter amplifier circuit. It provides background on bipolar junction transistors and describes the circuit configuration used. Tables show the input characteristics for different base voltages and collector voltages. Output characteristics are also shown for varying collector currents and voltages. Graphs are drawn of the input and output characteristics and a Q-point is located from the results. The conclusion discusses determining the input and output characteristics to identify the transistor properties in the circuit.

Uploaded by

Rifat Rudro
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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AMERICAN INTERNATIONAL UNIVERSITY–BANGLADESH (AIUB)

FACULTY OF ENGINEERING
ELECTRONIC DEVICES LAB

Spring 2021-2022

Section: R

Group: 01

LAB REPORT ON

Study of Transistor Characteristics in Common Emitter Amplifier


Supervised By
S. M. IMRAT RAHMAN

Submitted By:

Name ID
1. Md.Hamid Uddin 19-40250-1
2. Md.Jisun Abedin Aurnob 19-40318-1
3. Wathin Marma 19-40379-1
4. Rifat Al Mamun Rudro 19-39909-1
5. Jahnnabi Mazumder 19-40294-1

Date of Submission: 01 March, 2022


Introduction:
A Bipolar Junction Transistor is a three-terminal semiconductor device made up of two p-n
junctions that may amplify or magnify a signal. It is a gadget that is controlled by current. The
base, collector, and emitter are the three terminals of the BJT. A bipolar junction transistor (BJT)
is a kind of transistor that employs both electrons and holes as charge carriers. There are two types
of bipolar junction transistors –
• NPN transistors and
• PNP transistors.
A diagram of these two types of bipolar junction transistors is given below.

Theory and Methodology:


A bipolar junction transistor includes a three-terminal device so it can be connected to a circuit in
three possible ways through one terminal being common between others which means one terminal
in between input as well as output is common. Every connection simply responds in a different
way to the input signal.

In the PNP transistors, the emitter is more positive with the base and also with respect to the
collector. The PNP transistor is a three-terminal device that is made from semiconductor material.
The three terminals are collector, base, and emitter, and the transistor is used for switching and
amplifying applications.

The NPN transistor is exactly opposite to the PNP transistor. The NPN transistor contains three
terminals which are the same as the PNP transistor which are emitter, collector, and base.
The behavior of the bipolar transistor in every circuit configuration is extremely different &
generates dissimilar circuit characteristics with respect to input & output impedances and gains
like the voltage, power, and current. Applications in BJT they are:

• Switching.
• Amplification.
• Converters.
• Amplifiers.
Simulation Model:
Input Characteristics:
Fig 01: VB 0V with VCC 8V

Fig 02: VB 1V with VCC 8V


Fig 03: VB 2.5V with VCC 8V

Fig 04: VB 0V with VCC 16V


Fig 05: VB 0.5V with VCC 16V

Fig 06: VB 1.5V with VCC 16V


Fig 07: VB 2.5V with VCC 16V

Output Characteristics:

Fig 08: 0V VCC with IB=0uA


Fig 09: 16V VCC with IB=50uA

Fig 09: 0V VCC with IB=100uA


Fig 10: 16V VCC with IB=100uA

Result Analysis:

Input Characteristics:

VCC 8V VCC 16V


VBB VBE IB VBB VBE IB
0 8.1958e-8V 0A 0 1.61956e-7V 0A
0.5 0.499594V 4.05725e-7A 0.5 0.499594V 4.05642e-7A
1 0.692523V 0.000307477A 1 0.709926V 0.000290074A
1.5 0.698493V 0.000801507A 1.5 0.715265V 0.000784735A
2 0.704164V 0.001296A 2 0.720305V 0.00128A
2.5 0.709645V 0.00179A 2.5 0.725205V 0.001775A
Fig 11: Input Characteristics Curve for 8V VCC

Fig 12: Input Characteristics Curve for 16V VCC

Output Characteristics:

IB 0uA
VCC VCE IC
0 0V 0 mA
4 4V -4.086 mA
8 8V --8.171nA
12 12 V -12.257 mA
16 16V -16.342nA
IB 50uA
VCC VCE IC
0 0.001747 V 0.001747 mA
4 0.162 V -3.838 mA
8 2.194 V -5.806 mA
12 5.515 V -7.485 mA
16 6.837V -9.163mA

IB 100uA
VCC VCE IC
0 0.000737239 V 737.239nA
4 0.105158 V -3.895mA
8 0.175918 V -7.824 mA
12 1..531 V -10.469 mA
16 3.161 V -12.831 mA
There were two characteristics. One is for input characteristics and another one is for output
characteristics. Both characteristics had two tables. One is VCC 8V and another one is VCC16V.
We used the result of the simulation and filled the tables with values. After that, we drew the input
and output characteristics curves. We used tables value to draw the curves. We put the VBB values
on the X-axis and put the IB value on the Y-axis.

Conclusion:

In this experiment we have studied about transistor characteristics in common emitter amplifier
and determine the input and output characteristics of a BJT circuit with a shared emitter. We have
identified the transistor's terminals and write down the value of Beta. Then we design the circuit
connections as shown in the manual figure. For input characteristics, we set the voltage VCE and
then change the voltage VBB to determine the Base current IB using the manual formula below.
We begin by opening the input circuit for output characteristics. Calculate the Collector current IC
by varying the collector voltage VCC in steps of 4V by applying the given formula. Then, by
changing VBB, set the base current IB to 50A and close the input circuit. Calculate IC in each step
by varying the voltage VCC according to the table. After that, we repeat the process for different
IB values. Finally, we plot the input and output characteristics graph and locate a Q point.

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