American International University-Bangladesh (Aiub) : Faculty of Engineering
American International University-Bangladesh (Aiub) : Faculty of Engineering
FACULTY OF ENGINEERING
ELECTRONIC DEVICES LAB
Spring 2021-2022
Section: R
Group: 01
LAB REPORT ON
Submitted By:
Name ID
1. Md.Hamid Uddin 19-40250-1
2. Md.Jisun Abedin Aurnob 19-40318-1
3. Wathin Marma 19-40379-1
4. Rifat Al Mamun Rudro 19-39909-1
5. Jahnnabi Mazumder 19-40294-1
In the PNP transistors, the emitter is more positive with the base and also with respect to the
collector. The PNP transistor is a three-terminal device that is made from semiconductor material.
The three terminals are collector, base, and emitter, and the transistor is used for switching and
amplifying applications.
The NPN transistor is exactly opposite to the PNP transistor. The NPN transistor contains three
terminals which are the same as the PNP transistor which are emitter, collector, and base.
The behavior of the bipolar transistor in every circuit configuration is extremely different &
generates dissimilar circuit characteristics with respect to input & output impedances and gains
like the voltage, power, and current. Applications in BJT they are:
• Switching.
• Amplification.
• Converters.
• Amplifiers.
Simulation Model:
Input Characteristics:
Fig 01: VB 0V with VCC 8V
Output Characteristics:
Result Analysis:
Input Characteristics:
Output Characteristics:
IB 0uA
VCC VCE IC
0 0V 0 mA
4 4V -4.086 mA
8 8V --8.171nA
12 12 V -12.257 mA
16 16V -16.342nA
IB 50uA
VCC VCE IC
0 0.001747 V 0.001747 mA
4 0.162 V -3.838 mA
8 2.194 V -5.806 mA
12 5.515 V -7.485 mA
16 6.837V -9.163mA
IB 100uA
VCC VCE IC
0 0.000737239 V 737.239nA
4 0.105158 V -3.895mA
8 0.175918 V -7.824 mA
12 1..531 V -10.469 mA
16 3.161 V -12.831 mA
There were two characteristics. One is for input characteristics and another one is for output
characteristics. Both characteristics had two tables. One is VCC 8V and another one is VCC16V.
We used the result of the simulation and filled the tables with values. After that, we drew the input
and output characteristics curves. We used tables value to draw the curves. We put the VBB values
on the X-axis and put the IB value on the Y-axis.
Conclusion:
In this experiment we have studied about transistor characteristics in common emitter amplifier
and determine the input and output characteristics of a BJT circuit with a shared emitter. We have
identified the transistor's terminals and write down the value of Beta. Then we design the circuit
connections as shown in the manual figure. For input characteristics, we set the voltage VCE and
then change the voltage VBB to determine the Base current IB using the manual formula below.
We begin by opening the input circuit for output characteristics. Calculate the Collector current IC
by varying the collector voltage VCC in steps of 4V by applying the given formula. Then, by
changing VBB, set the base current IB to 50A and close the input circuit. Calculate IC in each step
by varying the voltage VCC according to the table. After that, we repeat the process for different
IB values. Finally, we plot the input and output characteristics graph and locate a Q point.