EDC (P) The Field Effect

6-2 Trans1stors
Learning Objectives
After reading this chapter you will learn about :
Construction of JFET.
Principle of operation of JFET.
Characteristics of JFET.
Parameters of JFET.
Construction and operation of depletion type MOSFETs.
Characteristics of depletion type MOSFET.
Construction, operation and characteristics of enhancement type MOSFET.
Comparison of BJT and JFET.
Comparison of JFET and MOSFET.
Comparison of D-MOSFET and E-MOSFET.

6.1 Introduction :

The Field-Effect Transistor (FET) is athree terminal device used for a variety of applications,
These applications are very much similar to those of a bipolar junction Iransistor (BJT). Alhough
there are many differences betwecn these devices, there are many similarities betwcen them. The
three teminals of an FET are named as drain (D), source (S) and gate (G). out of which gate acts
as a controlling terminal

Controlled Controlled
output current output current

B
BJT -

|FET
Controlling
input current Controlling
input voltage
E
VGs

{a) BJT is acurrent controlled device (b) FET is a voltage

Fig. 6.1.1
controlled device
The similarities and differences between these devices are as follows
Voltage controlled or current controlled ?
The voltage applied between gate and source (V Gs) controls the drain current In Therefore
FET is a voltage controlled device.
The transistor on the conrary is a current controlled device because the output current I, is
 6-3 The Field Effect Transistors
EDC (P)
current I,.
controllcd by varying the basc
mane fcld cffcct is dcrivcd from thc fact that the currcnt low in FET is controlled by an
voltagc.
clecric ficld sct by an cxtcrmal
?
Unipolar or bipolar
only duc to onc type of
CT is a unipoiar device, that mcans hc current flowing th°ough ita isbipolar
particals, holcs or clcctrons. Transistor on thc other hand is devicc as holcs and
charge
clcctrons both contributc to the low of current.
n-channcl and p-channcl ficld cffect
Loct as thcre arc npn and pnp transistors, thcrc arc
Iransistors.
impcdancc. Typically
One of thc most important characteristics of thc FET is its very high input input resislancc of a
than thc
it is in thc rangc of Tto scveral mcgaohms, which is much highcr
BJT.
it rcquircs lcss spacc than that
FETS arc morc tcmpcraturc stablc as comparcd to thc BJT and
for a BJT. Thcrclorc FETs arc prcfcrred in integratcd circuits.
Classification of Field Effect Transistors :
6.1.1
The ficld cffcct transistors arc classificd as follows
Junction ficld cffcct transistors (JFET)
Mctal oxide semiconductor ficld cfTcct transistors (MOSFET).
typcs as n-channel JFET
The junction ficld cffcct transistors arc further classified into two
and cnhancement type
and p-channcl JFET and thc MOSFETS arc furthcr classificd into depletion
MOSFETS.
Field Etfect Transistors (FETs)

Junction FET (JFET) MOSFETS

n-channel JFET p-channel JFET Depletion MOSFET Enhancement MOSFET

Fig. 6.1.2 : Classification of FETs

6.2 Construction of a JFET:

The JFETS are of two types. Let us understand their construction one by onc.

6.2.1 Construction of n-channel JFET:

The structure of an n-channel field effect transistor is as shown in Fig. 6.2.1(a). A
semiconductor bar of n-type matcrial is taken and ohmic contacts are made to he two ends of
the bar. Thesc are the terminals namcd drain and source as shown in Fig. 6.2.1(a).
2
On both sides of n-type bar, heavily dopcd (p) regions have been formed by alloying or
by diffusion to create a p-n junction. Both these p regions are connected together and via
an ohmic contact thc gate terminal is brought out.
3 The supply voltage is connccted betwcen the drain and source teminals of a JFET hence
current is causcd to flow along thc length of the n-type bar. This current is due to the
EDC (P) 64 The Field Effect Transistors

majority carricrs which in this casc arc clcctrons.

Fig. 6.2.1(b) shows the symbol for the n-typc JFET. Thc arow on gate teminal indicates the
conventional current dircctions.
-oDrain (D)
Ohmic
n

Channel
Contacts Drain(D)

Gate (G) Gate

p:
(G)
6 Source(S)
n

o Source (S)
(a) Structure of n-channcl JFET (b) Symbol of n-channcl JFET
Fig. 6.2.1

Channel :

Channcl is the n-type material betwcen thc two gatc regions. The majority carricrs (clectrons
herc) movc through this channcl from sourcc to drain Since the channcl is made of n-type material,
this FET is callcd as n-channçl JFET. Thc clcctrons cnter thec channcl through thc "source" teminal
and lcavc through the drain' teminal.
6.2.2 Construction of p-channel JFET :
1. The construction of a p-channcl JFET is as shown in Fig. 6.2.2(a) and its synbol is as shown
in Fig. 6.2.2(b).
2 The only difference bctween the p-channcl and n-channcl JFETS is that a p-type
semiconductor bar is being uscd with two n-typc gate rcgions.
3. Inp-channcl JFET, current flows due to the holes. This is bccausc holes arc majority carricrs
in ap-typc semiconductor bar. In n-channcl JFET curTent flows due to flow of clectrons.

o Drain (D)

Drain (D)

Gate (G)
Gate o
(G)

o Source (S)

Source ()

(a) Structure of p-channcl JFET (b) Symbol of p-channel JFET

Fig, 6.2.2
 Transistors
EDC (P) 6-5 The Field Effect

6.2.3
Unbiased JFET:
Before cxplaining the actual operation of a JFET lct us see how docs it operale wlen its control
eminal gate is left opcn. A positive supply voltage Vps is conncctcd betwecn the drain and
sourcc terminals.
lnside the n-type semiconductor bar there are a number of electrons available for conduciion
lnder the influencc of the externally connected voltage Vps, these clectrons start flowing from
sourcc to drain.
This constitutes he drain current I: These electrons pass through the narrow passage between
the two p-type gates. This passage is called as channc|'"
bias
In the absence of any applied potential, the JFET has two p-n junctions under no
conditions. The result is a depletion region at cach junction as shown in Fig. 6.2.3.

o Drain (D)
Ohmic
n-channel n Contacts

Gate (G) o p

Depletion. Depletion region

region
Source (S)

Fig, 6.2.3 : Unbiased JFET

Recall that a depletior
resembles the depletion region in a diode under no bias conditions. therefore does not
This contain any free carriers inside it and
region is that region which does not
support conduction through the region.
Junction :
6.2.4 Biasing of Gate to Source
should be
junction of a JFET is always reverse biased. Therefore Ves
The gate to source p-n gate to source p-n junction, the output
voltage applied to the gate-source
negative with increase in the reverseIn Will decrease. Due to the reverse bias on the
current which is the drain current
small.
junction, the gate current is negligibly
6.3 Biased JFET :

[ASKED IN EXAM - DEC. 2001, MAY 2003 !!!

source terminals of a JFET, ie. Vne
is
applied between the drain and
I apositive voltage is the gate and source terminals ie. Ves is
voltage is applied between
positive and if a negative
for different values of Vcs as follows
ncgative. The operation of JFET is explained
() Operation of n-channel .JFET with Vcs =0:
JFET.
us see the effect of gate to source voltage Vs 0n the operation of an-channel
Now let
 The FIeTd
6-6
EDC (P)
= 0.
Fig. 6.3.1(a) in which gate is connccted to sourcc making VGs carlier.
Refer to
the channel as explained
starts flowing through
Duc to the supply voltage Vs, Current the drain current flow,
causes a voltage
finite resistance. Therefore
The n-type material has a of the
drop along the channel. The depletion region
source p-n junction. it is lighty oped as
This voltage drop will rcverse bias the gate to
into the n-tvpe bar because
penetrates more
reverse biased p-n junction
comparcd to the heavily doped p-type gate. n-tvpe bar depends on the reverse bias voltage. Due
region into is reduced, as
The penetration of the depletion
width of the channel" available for conduction
to the depletion regions the
shown in Fig. 6.3.1 (a). channel is widest.
condition maximum drain current Inse Will flow as the
Under this operating
Drain
Drain
D

Gatep: Vos Gate p Vps Gate Vps

VGs VGs
Depletion
regions
Source Source
VGs =0 Source

(a) Operation with no bias (b) Operation with a small (c) Operation with a large
voltage negative gate source bias negative gate sourçe bias a
ampun vol lpss tha oCws,thh
aFig. 6.ircwt due t imedance
(iü) Operation of a n-channcl JFET for small negative Vcs :

Now a small negative voltage is applied between the gate and source terminals as shown in
Fig. 6.3.1(b).
Due to the reverse voltage applied across the gate source junction the penetration of the
depletion region into n-type material incrcases further.
This will reduce the channcl width further. Due to reduced channel width less number of
electrons can pass through to drain from sourcc. Therefore drain current I reduces with
increase in -Vas:
(iü) Operation of n-channel JFET for large value of negative Vcs :
As the negative voltage Ves is further increased, the depletion regions spread more inside the
n-type bar.
At acertain value of negative Vcs. the depletion regions touch each other as shown in
Fig. 6.3.1(c).
The channel width is therefore zero and thercfore the drain current Ip = 0.
This gate to source
 6-7
EDC (P) The Field Effect Transistors

voltage at which the drain curent is cutoff is called as Gs (of)

Thus with increase in the negative gate to source voltage, the channcl becomes Imore and morc
narO wy and drain current Ip reduces.

Thus for Ves 0, maMmnum dran cument Ipss will flow through JFET
The drain cuTCnt
hen pduces with increaSC in thc ncgative gate to
source bias. Hence JFET is a voltage
Controllcd device.

6.4
JFET Characteristics :

The V-I charactenstics of a JFET will hclp us to

Asoe characteristics are plotted graphucally with voltage on understand the behaviour of the device.
one axis and current on the other axis.
The important characteistics of a JFET are:
Drain characteristics and
Transfer characteristics.
6.4.1 Drain Characteristics :
[ASKED IN EXAM - DEC. 98, DEC. 99, DEC. 2000,
MAY 2001, DEC. 2002, DEC. 2003 !! 1
Drain characteristics of a n-channel JFET arce as shown in Fig. 6.4.1.
plot of drain curTent p Versus drain to source voltage Ve at different Drain characteristics is a
values of gate to source
voltage VGs
Observations from the drain characteristics :
The characteristics has been divided into three egions viz. cutoff,
region.
saturation and ohmic
(ü) Cutoff Region : With incrase in the negative Vee voltage, the channel width available for
conduction decreases. At a certain voltage called Vs (ofT) the depletion regions touch
cach other to close the channel completel,: Thus cutoff region corresponds to I, = 0 and
Vos > VGs (off )'
(üi) Saturation Region : As shown in Fig. 6.4.1, saturation region is that portion of the
characteristics where I, emains fairly constant and does not change with changes in V,
DS
This "satuation" is entirely different than the "saturation" in a transistor. In order to use
the JFET as an amplifier it is operated in the saturation region.
(w) Ohmic Region : The drain current I, varies with variation in the drain to source voltage
Vpg in the ohmic region as shown in Fig. 6.4.1.
C

The JFET is therefore said to be operating as a voltage variable resistance in the ohmic
region. The resistance offered by the JFET decreases with decrrase in the value of
negative gate to source bias voltage i.e. negative Vos
The FET resistance in the ohmic egion is given by,
Rps V/'Dss
where, = Pinch off voltage and Inss = Maximumdrain current.
 EDC (P) 6-8 The Field Effect Transistors

Drain current
Ohmic
Ip(mA) region
Saturation
Curve showing pinch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8
off voltages
Vas = 0
6
Vas = -1 - p . . . . . . .

4
Breakdown
VGs = -2
region

Ves =-3
Vas =-4
Vos (Volts)
10 15 20

Vp(for VGs = 0V)

Fig. 6.4.1 : Drain characteristics of an n-channel JFET

v) FET Brcakdown : When a JFET is operating in the saturation region, I, does not change
X with change in ne DS upto a certain value of Vps:

If Vps is increascd further.beyond this value, the gate channcl junction beaks down due
to avalanche cffect and the drain current shoots up suddenly as shown in Fig. 6.4.1.
This can damage the device. The value of breakdown voltage docs not remain constant.
Infact it decreases with increase in negative valucs of VGs
The operation in the breakdown region should be avoided in order to protect the JFET
against damage.
Fig. 6.4.2 shows an experimental setup for plotting the drain characteristics. An n-channcl
JFET is being used and the voltage polaritics are adjusted accordingly.
MA

D
G
Vos Voo
VGs

Fig, 6.4.2:Experimental sctup to plot the JFET characteristics

(vi) Effect of Negative Vrs Bias : With increase in the negative Ves bias the channel width
decreases and drain current I, reduces proporionally.
Afamily of curves for different values of Vcs is as shown in Fig. 6.4.1.
 EDC (P) 6-9
The Field Effect Transistors
With incrcase in the ncgative
Vos bias, thc brcakdown will 1ake place
Vps at lowcr Vaues
(vii) Pinch off Voltage Thc pinch offT"
voltage is thc valuc of V. at which the
rcaches its constant saturation valuc. drain current
Any further increasc in VDs
docs not havc any cffcct on the
Do not makc a confusion valuc of Ip:
denotcd by Vp. betwccn thc cutoff and pinch ofT. The
pinch off voltage is
6.4.2 Relation between
VGs (off ) and Vp:
Refer to Fig. 6.4.3 which shows the
cffect of negative values of Vos on the
af voltagc Vp. As Scen in Fig. 6.4.3, the valucs of
value of V, reduces parabolically with incrcase in pincn
V That mcans the JFET negative
saturates at lower values of V as Vos becomes morc
at aparticular valuc of VGs -Vp, the ncgative. Finally
saturation levcl reduces to 0 mA and the device has been
tuncd off. Then VGs (of) -
Vp-
Conclusion :

The level of VGs that results in I, = 0mA is

defined by
negative voltage for n channel devices and a positive voltage for a Vos = -Vp, with Vp being a
p-channel device.
lp (mA)
Locus of pinch-off values
Ohmic
8 region Saturation region
'Dss VGs = 0V

Ves = -1V

VGs =-2V
VGs= -3V

5 10 15 Ves =-4V= Vp Vos(Voltr)

Vp for VGs = 0V
Vp for Vas =-3V
Fig, 6,4.3: Relation between Ves(om) and Vp for a JFET
In most of the specification shcets thc pinch off voltage is spccified as VGs ( ofT) rather than
Vp. Thereforc in Fig. 6.4.3. the saturation level reduces to 0 mA for VGs = -4V. Therefore
V, = +4V.
EDC (P) 6-10 The Field Effect Transistors

6.4.3 Transfer Characteristics :

|Transfcr characteristics is_thc plot of output current I, versus the input controlling quantity
which is Vas in this case.
For a bipolar transistor the relation between output current I, and input controlling quantity I
is given by,
...(6.4.1)
where Ba. is considered to be a constant.
Therefore the transfer characteristics of a transistor is a straight linc indicating a lincar rlation
betwcen lç and l
However the relation between I and Vps is not lincar. The rolationship betwccn I, and Vos is
defined by Schocklcy's cquation which states that,
-2
Ip Ipss 1 Vos ...(6.4.2)

where, Ipss Maximum drain current V, = Pinch off voltage

In the Equation (6.4.2), Ipss and Vp are considered to be the constant quantities. The relation
between Ip and Vcs is therefore a squared relationship, which produces a curve which is
growing cxponentially as shown in Fig. 6.4.4.
‘'o (mA)

Ipss
Transter characteristics
+6

2
lb=0, Vas =Vp 1

Vas (volts) -3 -2 -1

Fig. 6.4.4 : Transfer characteristics of a JFET

As secn from Fig. 6.4.4, when VGs = 0 volt, lp = lpss and

when Vcs = V, = -4 volt thc
drain current Ip = 0. These are the two Cxtreme points on the
characteristics. The transfer
characteristics grows cxponentially with reduction in thc negative Vas.
The transfer characteristics defined by the
the network in which the JFET is Schockley's equation are unaffected (remain same) by
connected. The transfer curve can be obtained
Schockley's cquation or from the drain characteristics of Fig. 6.4.1. Fig. 6.4.5 shows using
transfer characteristics can be plotted from the drain characteristics. how a
 Transistors
6-11 The Field Effect
EDC (P)
‘lo(mA) Drain characteristics
VGs = 0V
8

Transter characteristics 7 7

6 6
Vas =-1V
5 5

3 3 VGs =-2V
2 2
Ves = -3V MGs -4V
1 1

VGs 10 15 VDs (volts)

5
-3 -2 -1

-l =0, VGs = -Vp

Obtaining the transfer characteristics from drain characteristics
Fig. 6.4.5 :
Parameters of JFET:
6.5
2002 !!1
2000, MAY 2001, DEC.
ASKED IN EXAM - DEC.

important parameters of a JFET are as follows

The three

Drain resistance ( I,)

Transconductance (gm )
Amplification factor (4).

6.5.1
Drain Resistance (ra): ASKED IN EXAM - DEC.
99 !!

JFET. It is defined as the ratio of

of a
is an AC resistance at a constant
Definition : Drain resistance corresponding change in the drain current, FET
to source voltage to the calculated in the saturation region of the
change in the drain voltage. Drain resistance
is
value of gate to source
output characteristics.
...(6.5.1)
AVps
constant Vos

characteristics ?
How to obtain r " from output 6.5.1. Note
characteristics as shown in Fig.
Drain resistance can be obtained from the output slope of the
constant value of Veg: As the
that it is the
reciprocal of he output characteristics for a 50 ks to
It usually lies in the range of
characteristics is very small the value of " is very large.
hundrcd k s2.
few
EDC (P) 6-12 The Field Effect Transistors

lo (mA) ‘

Vos
Alp lconst Vas
Alp Vas = OV

AV ps
Vas = -2V

VGs= -4V

Vps (volts)

Fig. 6.5.1: To calculate r, from the drain characteristics of JFET

6.5.2 Transconductance (9m):
ASKED IN EXAM - DEC. 99 !!! 1

The transconductance is defined as the ratio of change in drain current to he

corresponding change in gate to source voltage, at a constant value of drain to source voltage.

Sm
Alp ...(6.5.2)
AVGs constant Vps
How to obtain g from the transfer characteristics ?
Transconductance can be obtained from the transfer characteristics of the JFET. Refer t0
Fig. 6.5.2. It shows that transconductance is the slope of transfer characteristics. Slope of the transfer
characteristics is not constant. It depends on the value of VGs: Therefore g has larger value near
the top of the transfer characteristics. The units for transconductance will be mAN.

lp (mA) ‘

9m =
AVGs lconst Vns
\Alo

Vas AVas
Fig. 6.5.2: To calculate g from the transfer characteristics of JFET
 6-13 The Field Effect Transistors
EDC (P)

Mathematical cxpressionfor g.
The iransconductance can be calculatcd from the following cquation which statcs that,
VGs
...(6.5.3)

In this couation go is the valuc of g,, for Vas = 0.

We alrcady know that, VGs

Solving the square tem on thc right harnd side we get,
2 Gs GS

Vp P

Differentiating this cquation with respect to Vcs We get :

GS
-2ss 2 pss GS

But

-2 pss VGs ...(6.5.4)

Compare Equations (6.5.3) and (6.5.4) to conclude that,

=
-2 lpss ...(6.5.5)
Bmo
Vp
6.5.3 Amplification Factor ( ) :
Definition : Amplification factor " " is defined as the ratio of change in the drain to
at a constant value ofIn.
Source yoltage, to change in the gate to source voltagc,
AVps
...(6.5.6)
AVGs A constant

= X
A V,Gs

..(6.5.7)
unitlcss.
As u" is the ratio of two0 voltages, it is