Electronic Devices and Circuits Lab LAB 1

Lab Session 1
Name: ____________________ Participant ID: __________________

Study of Diode Characteristics

1.1 Objectives
The objective of this lab is to calculate, measure, draw and compare the characteristics of a silicon diode.

1.2 Equipment Required

 Instruments
DMM, DC power supply
 Components
1kΩ, 1MΩ, 1N4007

1.3 Theory
Most modern-day digital multimeters can be used to determine the operating condition of a diode. They
have a scale denoted by a diode symbol that will indicate the condition of a diode in the forward- and reverse-bias
regions, connected to establish a forward-bias condition, the meter will display the forward voltage across the
diode at a current level typically in the neighborhood of 2mA. If connected to establish a reverse-bias condition,
an "OL" should appear on the display to support the open-circuit approximation frequently applied to this region.
If the meter does not have the diode checking capability, the condition of the diode can also be checked by
obtaining some measure of the resistance level in the forward- and reverse bias regions. The current-volt
characteristics of a silicon or germanium diode have the general shape shown in Fig. 1.1. Note the change in scale
for both the vertical and horizontal axes. In the reverse-biased region the reverse saturation currents are fairly
constant from 0 V to the Zener potential. In the forward-bias region the current increases quite rapidly with
increasing diode voltage. Note that the curves are rising almost vertically at a forward-biased voltage of less than
1 V. The forward-biased diode current will be limited solely by the network in which the diode is connected or by
the maximum current or power rating of the diode.

Fig. 1. 1 Silicon and Germanium diode characteristics

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 Electronic Devices and Circuits Lab LAB 1
The "firing potential" or threshold voltage is determined by extending a straight line (dashed lines c Fig.
1.1) tangent to the curves until it hit the horizontal axis The intersection with the VD axis will determine the
threshold voltage VT at which the current begins to rise rapidly. The DC or static resistance of a diode at any
point on the characteristic is determined by the ratio of the diode voltage at that point, divided by the diode
current.

VD
R DC = eq (1)
ID

VD
I D= eq (2)
R meas

1.4 Procedure
Part 1: Diode Testing
The diode-testing scale of a DMM can be used to determine the operating condition of a diode. With one
polarity, the DMM should provide the "firing potential" of the diode, while the reverse connection should result in
an "OL" response to support the open-circuit approximation. Using the connections shown in Fig. 1.2, the
constant-current source of about 2 mA internal to the meter will forward bias the junction, and a voltage of about
0.7 V (700 mV) will be obtained for silicon and 0.3 V (300 mV) for germanium. If the leads are reversed, an OL
indication will be obtained.

Fig. 1. 2 DMM connections for diode testing

Part 2: Forward-bias Diode Characteristics

In this part of the experiment, we will obtain sufficient data to plot the forward-bias characteristics of the
silicon diode.

 Construct the circuit on breadboard as shown in Fig. 1.3, with the supply voltage set to 0V initially.

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Electronic Devices and Circuits Lab LAB 1

Fig. 1. 3 Connection diagram for forward-bias characteristics

 Increase the supply voltage E until V R (not E) reads 0.1 V. Then measure VD and insert its voltage in
Table 1.1. Calculate the value of the corresponding current I D using the eq (2).

Table 1.1

VR
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 4 5 6 7 8 9 10
(V)

VD
(V)

ID
(mA)

 On following graph, plot ID versus VD for the silicon and diode. Complete the curves by extending the
lower region of each curve to the intersection of the axis at ID = 0 mA and VD = 0 V. Label each curve
and clearly indicate data points. Be neat!

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 Electronic Devices and Circuits Lab LAB 1

Part 3: Reverse-bias Diode Characteristics

In Fig. 1.4 a reverse-bias condition has been established. Since the reverse saturation current will be
relatively small, a large resistance of 1 MΩ is required if the voltage across R is to be of measurable amplitude.
Construct the circuit of Fig. 1.4 and record the measured value of R on the diagram.

Fig. 1. 4 Reverse-bias Diode connections

 Determine the DC resistance levels for the silicon diode using the eq (1).

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 Electronic Devices and Circuits Lab LAB 1
R DC =¿ ¿

Part 4: DC resistance of Diode

Using the above graph data, determine the diode voltage a diode current levels indicated in Table 1.2.
Then determine the resistance at each current level.

Table 1.2

I D (mA) V D(V) R DC(Ω)

 Does the resistance (for Si) change as the diode cur increases and we move up the vertical-rise section of
characteristics?

Explanation and Results

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Electronic Devices and Circuits Lab LAB 1

Questions
Q1: What is Silicon diode used for?

Q2: What is the threshold voltage for silicon and germanium diodes?

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Electronic Devices and Circuits Lab LAB 1

Q3: What is the difference between Zener and Avalanche breakdown?

Q4: What are the applications of diode?

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