MODULE 43: MEMORY SYSTEM

BASIC CONCEPTS
• Maximum size of memory that can be used in any computer is determined by addressing mode.

• If MAR is k-bits long then

→ memory may contain upto 2K addressable-locations
• If MDR is n-bits long, then
→ n-bits of data are transferred between the memory and processor.
• The data-transfer takes place over the processor-bus (Figure 8.1).
• The processor-bus has
1) Address-Line
2) Data-line &
3) Control-Line (R/W‟, MFC – Memory Function Completed).
• The Control-Line is used for coordinating data-transfer.
• The processor reads the data from the memory by
→ loading the address of the required memory-location into MAR and
→ setting the R/W‟ line to 1.
• The memory responds by
→ placing the data from the addressed-location onto the data-lines and
→ confirms this action by asserting MFC signal.
• Upon receipt of MFC signal, the processor loads the data from the data-lines into MDR.
• The processor writes the data into the memory-location by
→ loading the address of this location into MAR &
→ setting the R/W‟ line to 0.
• Memory Access Time: It is the time that elapses between
→ initiation of an operation &
→ completion of that operation.
• Memory Cycle Time: It is the minimum time delay that required between the initiation of the two
successive memory-operations.

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RAM (Random Access Memory)
• In RAM, any location can be accessed for a Read/Write-operation in fixed amount of time,
Cache Memory
 It is a small, fast memory that is inserted between
→ larger slower main-memory and
→ processor.
 It holds the currently active segments of a program and their data.
Virtual Memory
 The address generated by the processor is referred to as a virtual/logical address.
 The virtual-address-space is mapped onto the physical-memory where data are actually stored.
 The mapping-function is implemented by MMU. (MMU = memory management unit).
 Only the active portion of the address-space is mapped into locations in the physical-memory.
 The remaining virtual-addresses are mapped onto the bulk storage devices such as magnetic disk.
 As the active portion of the virtual-address-space changes during program execution, the MMU
→ changes the mapping-function &
→ transfers the data between disk and memory.
 During every memory-cycle, MMU determines whether the addressed-page is in the memory. If
the page is in the memory.
Then, the proper word is accessed and execution proceeds.
Otherwise, a page containing desired word is transferred from disk to memory.
• Memory can be classified as follows:
1) RAM which can be further classified as follows:
i) Static RAM
ii) Dynamic RAM (DRAM) which can be further classified as synchronous & asynchronous
DRAM.
2) ROM which can be further classified as follows:
i) PROM
ii) EPROM
iii) EEPROM &
iv) Flash Memory which can be further classified as Flash Cards & Flash Drives.

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SEMI CONDUCTOR RAM MEMORIES
INTERNAL ORGANIZATION OF MEMORY-CHIPS
• Memory-cells are organized in the form of array (Figure 8.2).
• Each cell is capable of storing 1-bit of information.
• Each row of cells forms a memory-word.
• All cells of a row are connected to a common line called as Word-Line.
• The cells in each column are connected to Sense/Write circuit by 2-bit-lines.
• The Sense/Write circuits are connected to data-input or output lines of the chip.
• During a write-operation, the sense/write circuit
→ receive input information &
→ store input info in the cells of the selected word.

• The data-input and data-output of each Sense/Write circuit are connected to a single bidirectional data-
line.
• Data-line can be connected to a data-bus of the computer.
• Following 2 control lines are also used:
1) R/W’ operation.
2) CS’ -chip memory-system.

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STATIC RAM (OR MEMORY)
• Memories consist of circuits capable of retaining their state as long as power is applied are known.

• Two inverters are cross connected to form a latch (Figure 8.4).

• The latch is connected to 2-bit-lines by transistors T1 and T2.
• The transistors act as switches that can be opened/closed under the control of the word-line.
• When the word-line is at ground level, the transistors are turned off and the latch retain its state.
Read Operation
• To read the state of the cell, the word-line is activated to close switches T1 and T2.
• If the cell is in state 1, the signal on bit-line b is high and the signal on the bit-line b‟ is low.
• Thus, b and b‟ are complement of each other.
• Sense/Write circuit
→ monitors the state of b & b‟ and
→ sets the output accordingly.
Write Operation
• The state of the cell is set by
→ placing the appropriate value on bit-line b and its complement on b‟ and
→ then activating the word-line. This forces the cell into the corresponding state.
• The required signal on the bit-lines is generated by Sense/Write circuit.

CMOS Cell
• Transistor pairs (T3, T5) and (T4, T6) form the inverters in the latch (Figure 8.5).
• In state 1, the voltage at point X is high by having T 5, T6 ON and T4, T5 are OFF.
• Thus, T1 and T2 returned ON (Closed), bit-line b and b‟ will have high and low signals respectively.
• Advantages:
1) It has low power consumption „.‟ the current flows in the cell only when the cell is active.
2) Static RAM‟s can be accessed quickly. It access time is few nanoseconds.
• Disadvantage: SRAMs are said to be volatile memories „.‟ their contents are lost when power is
interrupted.

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ASYNCHRONOUS DRAM
• Less expensive RAMs can be implemented if simple cells are used.
• Such cells cannot retain their state indefinitely. Hence they are called Dynamic RAM (DRAM).
• The information stored in a dynamic memory-cell in the form of a charge on a capacitor.
• This charge can be maintained only for tens of milliseconds.
• The contents must be periodically refreshed by restoring this capacitor charge to its full value.

• In order to store information in the cell, the transistor T is turned „ON‟ (Figure 8.6).
• The appropriate voltage is applied to the bit-line which charges the capacitor.
• After the transistor is turned off, the capacitor begins to discharge.
• Hence, info. stored in cell can be retrieved correctly before threshold value of capacitor drops down.
• During a read-operation,
→ transistor is turned „ON‟
→ a sense amplifier detects whether the charge on the capacitor is above the threshold value.
 If (charge on capacitor) > (t -line will have logic value „1‟.
 -line will set to logic value „0‟.

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ASYNCHRONOUS DRAM DESCRIPTION
• The 4 bit cells in each row are divided into 512 groups of 8 (Figure 5.7).
• 21 bit address is needed to access a byte in the memory. 21 bit is divided as follows:
1) 12 address bits are needed to select a row.
i.e. A8-0 → specifies row-address of a byte.
2) 9 bits are needed to specify a group of 8 bits in the selected row.
i.e. A20-9 → specifies column-address of a byte.

• During Read/Write-operation,
→ row-address is applied first.
→ row-address is loaded into row-latch in response to a signal pulse on RAS’ input of chip. (RAS
= Row-address Strobe CAS = Column-address Strobe)
• When a Read-operation is initiated, all cells on the selected row are read and refreshed.
• Shortly after the row-address is loaded, the column-address is
→ applied to the address pins &
→ loaded into CAS’.
• The information in the latch is decoded.
• The appropriate group of 8 Sense/Write circuits is selected.
R/W’=1(read- -lines D0-D7.
R/W’=0(write- 0-D7 are transferred to the selected circuits.
• RAS‟ & CAS‟ are active-low so that they cause latching of address when they change from high to low.
• To ensure that the contents of DRAMs are maintained, each row of cells is accessed periodically.
• A special memory-circuit provides the necessary control signals RAS‟ & CAS‟ that govern the timing.
• The processor must take into account the delay in the response of the memory.
Fast Page Mode
 Transferring the bytes in sequential order is achieved by applying the consecutive sequence of
column-address under the control of successive CAS‟ signals.
 This scheme allows transferring a block of data at a faster rate.
 The block of transfer capability is called as fast page mode.

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READ ONLY MEMORY (ROM)
• Both SRAM and DRAM chips are volatile, i.e. They lose the stored information if power is turned off.
• Many application requires non-volatile memory which retains the stored information if power is turned
off.
• For ex:
OS software has to be loaded from disk to memory i.e. it requires non-volatile memory.
• Non-volatile memory is used in embedded system.
• Since the normal operation involves only reading of stored data, a memory of this type is called ROM.
 At Logic value ‘0’ (P).
Transistor switch is closed & voltage on bit-line nearly drops to zero (Figure 8.11).
 At Logic value ‘1’
The bit-line remains at high voltage.

• To read the state of the cell, the word-line is activated.

• A Sense circuit at the end of the bit-line generates the proper output value.

TYPES OF ROM
• Different types of non-volatile memory are
1) PROM
2) EPROM
3) EEPROM &
4) Flash Memory (Flash Cards & Flash Drives)

PROM (PROGRAMMABLE ROM)

• PROM allows the data to be loaded by the user.
• Programmability is achieved by inserting a „fuse‟ at point P in a ROM cell.
• Before PROM is programmed, the memory contains all 0‟s.
• User can insert 1‟s at required location by burning-out fuse using high current-pulse.
• This process is irreversible.
• Advantages:
1) It provides flexibility.
2) It is faster.
3) It is less expensive because they can be programmed directly by the user.

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EPROM (ERASABLE REPROGRAMMABLE ROM)
• EPROM allows
→ stored data to be erased and
→ new data to be loaded.
• In cell, a connection to ground is always made at „P‟ and a special transistor is used.
• The transistor has the ability to function as
→ a normal transistor or
→ a disabled transistor that is always turned „off‟.
• Transistor can be programmed to behave as a permanently open switch, by injecting charge into it.
• Erasure requires dissipating the charges trapped in the transistor of memory-cells. This
can be done by exposing the chip to ultra-violet light.
• Advantages:
1) It provides flexibility during the development-phase of digital-system.
2) It is capable of retaining the stored information for a long time.
• Disadvantages:
1) The chip must be physically removed from the circuit for reprogramming.
2) The entire contents need to be erased by UV light.

EEPROM (ELECTRICALLY ERASABLE ROM)

• Advantages:
1) It can be both programmed and erased electrically.
2) It allows the erasing of all cell contents selectively.
• Disadvantage: It requires different voltage for erasing, writing and reading the stored data.

FLASH MEMORY
• In EEPROM, it is possible to read & write the contents of a single cell.
• In Flash device, it is possible to read contents of a single cell & write entire contents of a block.
• Prior to writing, the previous contents of the block are erased.
Eg. In MP3 player, the flash memory stores the data that represents sound.
• Single flash chips cannot provide sufficient storage capacity for embedded-system.
• Advantages:
1) Flash drives have greater density which leads to higher capacity & low cost per bit.
2) It requires single power supply voltage & consumes less power.
• There are 2 methods for implementing larger memory: 1) Flash Cards & 2) Flash Drives
1) Flash Cards
 One way of constructing larger module is to mount flash-chips on a small card.
 Such flash-card have standard interface.
 The card is simply plugged into a conveniently accessible slot.
 Memory-size of the card can be 8, 32 or 64MB.
 Eg: A minute of music can be stored in 1MB of memory. Hence 64MB flash cards can store an
hour of music.
2) Flash Drives
 Larger flash memory can be developed by replacing the hard disk-drive.
 The flash drives are designed to fully emulate the hard disk.
 The flash drives are solid state electronic devices that have no movable parts.
Advantages:
1) They have shorter seek & access time which results in faster response.
2) They have low power consumption. .‟. they are attractive for battery driven
application.
3) They are insensitive to vibration.
Disadvantages:
1) The capacity of flash drive (<1GB) is less than hard disk (>1GB).
2) It leads to higher cost per bit.
3) Flash memory will weaken after it has been written a number of times (typically at
least 1 million times).

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CACHE MEMORIES
• The effectiveness of cache mechanism is based on the property of „Locality of Reference’.
Locality of Reference
• Many instructions in the localized areas of program are executed repeatedly during some time period
• Remainder of the program is accessed relatively infrequently (Figure 8.15).
• There are 2 types:
1) Temporal
 The recently executed instructions are likely to be executed again very soon.
2) Spatial
 Instructions in close proximity to recently executed instruction are also likely to be executed soon.
• If active segment of program is placed in cache-memory, then total execution time can be reduced.
• Block refers to the set of contiguous address locations of some size.
• The cache-line is used to refer to the cache-block.

• The Cache-memory stores a reasonable number of blocks at a given time.

• This number of blocks is small compared to the total number of blocks available in main-memory.
• Correspondence b/w main-memory-block & cache-memory-block is specified by mapping-function.
• Cache control hardware decides which block should be removed to create space for the new block.
• The collection of rule for making this decision is called the Replacement Algorithm.
• The cache control-circuit determines whether the requested-word currently exists in the cache.
• The write-operation is done in 2 ways: 1) Write-through protocol & 2) Write-back protocol.
Write-Through Protocol
 Here the cache-location and the main-memory-locations are updated simultaneously.
Write-Back Protocol
 This technique is to
→ update only the cache-location &
→ mark the cache-location with associated flag bit called Dirty/Modified Bit.
 The word in memory will be updated later, when the marked-block is removed from cache.
During Read-operation
• If the requested-word currently not exists in the cache, then read-miss will occur.
• To overcome the read miss, Load–through/Early restart protocol is used.
Load–Through Protocol
 The block of words that contains the requested-word is copied from the memory into cache.
 After entire block is loaded into cache, the requested-word is forwarded to processor.
During Write-operation
• If the requested-word not exists in the cache, then write-miss will occur.
1) If Write Through Protocol is used, the information is written directly into main-memory.
2) If Write Back Protocol is used,
→ then block containing the addressed word is first brought into the cache &
→ then the desired word in the cache is over-written with the new information.

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VIRTUAL MEMORY
• It refers to a technique that automatically move program/data blocks into the main-memory when they are
required for execution (Figure 8.24).
• The address generated by the processor is referred to as a virtual/logical address.
• The virtual-address is translated into physical-address by MMU (Memory Management Unit).
• During every memory-cycle, MMU determines whether the addressed-word is in the memory. If
the word is in memory.
Then, the word is accessed and execution proceeds.
Otherwise, a page containing desired word is transferred from disk to memory.
• Using DMA scheme, transfer of data between disk and memory is performed.

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SECONDARY-STORAGE
• The semi-conductor memories do not provide all the storage capability.
• The secondary-storage devices provide larger storage requirements.
• Some of the secondary-storage devices are:
1) Magnetic Disk
2) Optical Disk &
3) Magnetic Tapes.
MAGNETIC DISK
• Magnetic Disk system consists of one or more disk mounted on a common spindle.
• A thin magnetic film is deposited on each disk (Figure 8.27).
• Disk is placed in a rotary-drive so that magnetized surfaces move in close proximity to R/W heads.
• Each R/W head consists of 1) Magnetic Yoke & 2) Magnetizing-Coil.
• Digital information is stored on magnetic film by applying current pulse to the magnetizing-coil.
• Only changes in the magnetic field under the head can be sensed during the Read-operation.
• Therefore, if the binary states 0 & 1 are represented by two opposite states,
then a voltage is induced in the head only at 0-1 and at 1-0 transition in the bit stream.
• A consecutive of 0‟s & 1‟s are determined by using the clock.
• Manchester Encoding technique is used to combine the clocking information with data.

• R/W heads are maintained at small distance from disk-surfaces in order to achieve high bit densities.
• When disk is moving at their steady state, the air pressure develops b/w disk-surfaces & head. This
air pressure forces the head away from the surface.
• The flexible spring connection between head and its arm mounting permits the head to fly at the desired
distance away from the surface.
Winchester Technology
• Read/Write heads are placed in a sealed, air–filtered enclosure called the Winchester Technology.
• The read/write heads can operate closure to magnetic track surfaces because

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 the dust particles which are a problem in unsealed assemblies are absent.

Advantages
• It has a larger capacity for a given physical size.
• The data intensity is high because
the storage medium is not exposed to contaminating elements.
• The read/write heads of a disk system are movable.
• The disk system has 3 parts: 1) Disk Platter (Usually called Disk)
2) Disk-drive (spins the disk & moves Read/write heads)
3) Disk Controller (controls the operation of the system.)

ORGANIZATION & ACCESSING OF DATA ON A DISK

• Each surface is divided into concentric Tracks (Figure 8.28).
• Each track is divided into Sectors.
• The set of corresponding tracks on all surfaces of a stack of disk form a Logical Cylinder.
• The data are accessed by specifying the surface number, track number and the sector number.
• The Read/Write-operation start at sector boundaries.
• Data bits are stored serially on each track.

• Each sector usually contains 512 bytes.

• Sector Header --> contains identification information.
It helps to find the desired sector on the selected track.
• ECC (Error checking code)- is used to detect and correct errors.
• An unformatted disk has no information on its tracks.
• The formatting process divides the disk physically into tracks and sectors.
• The formatting process may discover some defective sectors on all tracks.
• Disk Controller keeps a record of various defects.
• The disk is divided into logical partitions:
1) Primary partition
2) Secondary partition
• Each track has same number of sectors. So, all tracks have same storage capacity.
• Thus, the stored information is packed more densely on inner track than on outer track.
Access Time
• There are 2 components involved in the time-delay:
1) Seek time: Time required to move the read/write head to the proper track.
2) Latency/Rotational Delay: The amount of time that elapses after head is positioned over the
correct track until the starting position of the addressed sector passes under the R/W head. Seek time
+ Latency = Disk access time
Typical Disk
 One inch disk-weight = 1 ounce, size -> comparable to match

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 book Capacity -> 1GB
 Inch disk has the following
parameter Recording
surface=20 Tracks=15000
tracks/surface Sectors=400.
Each sector stores 512 bytes of data

Capacity of formatted disk=20x15000x400x512=60x109

=60GB Seek time=3ms
Platter rotation=10000
rev/min Latency=3ms
Internet transfer rate=34MB/s

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DATA BUFFER/CACHE
• A disk-drive that incorporates the required SCSI circuit is referred as SCSI Drive.
• The SCSI can transfer data at higher rate than the disk tracks.
• A data buffer can be used to deal with the possible difference in transfer rate b/w disk and SCSI bus
• The buffer is a semiconductor memory.
• The buffer can also provide cache mechanism for the disk.
i.e. when a read request arrives at the disk, then controller first check if the data is available in the
cache/buffer.
If data is available in cache.
Then, the data can be accessed & placed on SCSI bus.
Otherwise, the data will be retrieved from the disk.

DISK CONTROLLER
• The disk controller acts as interface between disk-drive and system-bus (Figure 8.13).
• The disk controller uses DMA scheme to transfer data between disk and memory.
• When the OS initiates the transfer by issuing R/W‟ request, the controllers register will load the following
information:
1) Memory Address: Address of first memory-location of the block of words involved in the
transfer.
2) Disk Address: Location of the sector containing the beginning of the desired block of words.
3) Word Count: Number of words in the block to be transferred.

• The disk-address issued by the OS is a logical address.

• The corresponding physical-address on the disk may be different.
• The controller's major functions are:
1) Seek - Causes disk-drive to move the R/W head from its current position to desired track.
2) Read - Initiates a Read-operation, starting at address specified in the disk-address register. Data
read serially from the disk are assembled into words and placed into the data buffer for
transfer to the main-memory.
3) Write - Transfers data to the disk.
4) Error Checking - Computes the error correcting code (ECC) value for the data read from a given
sector and compares it with the corresponding ECC value read from the disk.
In case of a mismatch, it corrects the error if possible;
Otherwise, it raises an interrupt to inform the OS that an error has occurred.

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