Sideband Characteristic Analysis of Millimeter-Wave Generation Based On Optical Carrier Suppression
Sideband Characteristic Analysis of Millimeter-Wave Generation Based On Optical Carrier Suppression
Sideband Characteristic Analysis of Millimeter-Wave Generation Based On Optical Carrier Suppression
): 1014
www.buptjournal.cn/xben
The Journal of China
Universities of Posts and
Telecommunications
Sideband characteristic analysis of millimeter-wave generation based on
optical carrier suppression
HOU Chun-ning, SHAO Yu-feng, LIU Xiao, ZHENG Xi, Li Xin-ying,
ZHANG Jun-wen, FANG Wu-liang, CHI Nan ()
School of Information Science and Engineering, Fudan University, Shanghai 200433, China
Abstract
In this paper, we analyze the sideband performance of millimeter-wave (mm-wave) generated by the optical carrier suppression (OCS)
method. Through adjusting the direct current (DC) bias of the Mach-Zehnder modulator (MZM), we study the output optical signal
powers at different orders bands, and the DC bias tolerance while the value of the carrier suppression ratio is not lower than 10 dB. The
separated right sideband is modulated by 5 Gbit/s data, and then combined with the left sideband. The generated millimeter wave optical
signal is transmitted over 20 km standard single mode fiber (SMF), and the received power penalty is only 0.28 dB.
Keywords radio over fiber(RoF), optical carrier Suppression (OCS), millimeter-wave, sideband, direct current bias (DC bias)
1 Introduction
The use of mm-wave radio for future broadband service
provision seems assured since the ability to provide these
services with tetherless connectivity either cordless or
mobileis expected to be in great demand [1]. RoF is one of
the most attractive technologies for these systems owing to its
numerous benefits including high frequency, reliability, huge
bandwidth, low loss and interference immune signal distri-
bution [2]. Howeverthere is a problem in this RoF system
that millimeter-wave modulation using currently available
optical sources is not straightforward. The main techniques
that are currently being investigated to overcome these
limitations include an MZM based on double-sideband (DSB),
single-sideband (SSB) or OCS modulation scheme [3].
Among the mentioned schemes [48], the optical mm-wave
generation based on OCS modulation scheme has very high
receiver sensitivity, low spectral occupancy, and low
bandwidth requirement for radio frequency (RF) signals,
electrical amplifiers and optical modulators as well as small
Received date: 30-06-2009
Corresponding author: CHI Nan, E-mail: nanchi@fudan.edu.cn
DOI: 10.1016/S1005-8885(08)60366-0
power penalty over long-haul transmission. However, this
scheme has an inherent drawback due to the DC bias drift
which will dramatically deteriorate the generated signal
performance.
In this paper, we proposed a novel RoF scheme to generate
mm-wave by OCS modulation. We discussed the DC bias
tolerance of MZM, since the value of the carrier suppression
ratio (CSR) is not lower than 10 dB. It is noted that, the DC
bias of MZM was swept from 0 to 2 V, we demonstrated
while the value of the DC bias is 0.971.04 V, the CSR is
higher than 10 dB. The generated mm-wave is transmitted
over 20 km SMF, and the received power penalty is only
0.28 dB.
2 Principle
Fig. 1 displays the principle of the optical mm-wave
generation using the OCS modulation scheme. In Fig 1, V
b1
is
the V
DC
of MZM, ECL represents external cavity laser, OSA
represents optical spectrum analyzer, and ESA is short for
electrical spectrum analyzer.
The electrical field at the output of MZM is given by [8]
Supplement HOU Chun-ning, et al. / Sideband characteristic analysis of millimeter-wave generation based on 11
( )
out 0 c
( )
( ) cos cos ( )
2
V t
E t E t
u
e
(
=
(
(1)
Fig. 1 Schematic diagram of the optical mm-wave generation
using balanced MZM based on OCS modulation
where
0
E and
c
e denote the amplitude and angular
frequency of the input optical carrier respectively, ( ) V t is the
applied driving voltage, and ( ) ( ) V t u is the optical carrier
phase difference that is induced by ( ) V t between the two
arms of the MZM. The loss of MZM is neglected. ( ) V t
consists of an electrical sinusoidal signal and a DC biased
voltage, which can be written as
DC-bias m RF
( ) cos( ) V t V V t e = + (2)
where
DC-bias
V is the DC biased voltage,
m
V and
RF
e are
the amplitude and the angular frequency of the electrical
driving signal, respectively. The optical carrier phase
difference induced by ( ) V t is given by
( )
DC-bias m
RF
( ) cos( )
V V
V t t
V V
u e
t t
(
= t +
(
(3)
where V
t
is the half-wave voltage of MZM. Therefore, the
output electrical field can be rewritten as
DC-bias m
out 0 RF c
( ) cos cos( ) cos( )
V V
E t E t t
V V
e e
t t
(
= t + =
` (
)
DC-bias m
0 RF
cos cos cos( )
V V
E t
V V
e
t t
| | ( t t
| (
\ .
DC-bias m
RF c
sin sin cos( ) cos( )
V V
t t
V V
e e
t t
| | ( t t
` | (
\ . )
(4)
Expanding Eq. (4) with Bessel function leads to an expression
for the electrical field at the output of the MZM as
DC-bias m
out 0 0 c
( ) cos J cos ( )
V V
E t E t
V V
e
t t
| | t t
= +
|
\ .
m
2 c RF
1
J cos ( 2 )
n
n
V
t n t n
V
e e
= t
| | t
+ t +
|
\ .
m
2 c RF
J cos ( 2 )
n
V
t n t n
V
e e
t
( | | t
+ t +
(` |
( \ . )
DC-bias m
0 2 1
1
sin J
n
n
V V
E
V V
= t t
| | | | t t
| |
\ . \ .
c RF
cos ( (2 1) ) t n t n e e + t +
m
2 1 c RF
J cos ( (2 1) )
n
V
t n t n
V
e e
t
( | | t
+ t
( |
( \ .
(5)
where J
n
is the n-order Bessel function of the first kind.
Furthermore, as sideband suppression ratio, the sideband
suppression ratio o is defined as follows.
DC-bias m
0 1 c RF
DC-bias m
0 0 c
sin J cos ( )
cos J cos ( )
V V
E t t
V V
V V
E t
V V
e e
o
e
t t
t t
| | t t
+ t
|
\ .
| | t t
|
\ .
m
1 c RF
DC-bias
m
0 c
J cos ( )
cot
J cos ( )
V
t t
V V
V V
t
V
e e
e
t
t
t
| | t
+ t
|
| | t
\ .
|
| | t
\ .
|
\ .
(6)
3 Simulation and analysis
OCS is a promising method to generate optical millimeter
wave by balanced MZM or cascaded MZM with fine tuning
phase shift of the driven signals. The
DC-bias
V drift in MZM
will dramatically deteriorate the generated signal
performance.
Fig. 2 shows spectral characteristics of the OCS signal. The
emission frequency is 1.931h10
14
Hz, and the side mode
separation is 50 GHz. From Fig. 2(d) we can find that the
value of the optical power of even order sideband decreases at
first, then increases with the increase of
DC-bias
V . On the other
hand, the change trend of odd order sideband is just opposite.
Furthermore, the extreme points of optical power of the
different orders sideband are at the same value of
DC-bias
V ; so
o reach to the maximum value, having the best sideband
characteristic. Fig. 2(a), (b) and (c) respectively show the
optical power as a function of frequency at
DC-bias
V = 0.5 V,
1 V and 1.5 V.
Fig. 3 shows optical power as a function of the
DC-bias
/ V V
at different orders bands. We can find the base and second
sideband both achieve the minimal value at
DC-bias
V =1 V, while
the first and third sideband both achieve the maximal value at
the same voltage. Then, we get the maximal value of o
which is shown in Fig. 4. The 4% bias offset from the o
point generates from 10 to 1 000 times variation. When
12 The Journal of China Universities of Posts and Telecommunications 2009
DC-bias
V =1 V, o is the largest, and equals to 30 dB, which
can be illustrated by Fig. 4 (b). When
DC-bias
V is equal to 0.97
and 1.04 V, o is equal to 10.2 dB and 10.8 dBrespectively,
which can be shown in Figs. 4(a) and (c). We can further find
that o is greater than or equal to 10 when the bias drift is
from 0.97 to 1.04 V. Fig. 5 shows the detected electrical
harmonic frequencies as a function of the bias of MZM.
(a)
DC-bias
V in interval from 0 to 2 V
(b)
DC-bias
0.5 V =
(c)
DC-bias
1 V = (d)
DC-bias
1.5 V =
Fig. 2 Power of output signal as a function of frequency at different bias
Fig. 3 Optical carrier, sidebands for the first and second order
as a function of the bias
Fig. 4 Suppression ratio as a function of
DC-bias
V and the
power as a function of frequency at different values of
DC-bias
V
Supplement HOU Chun-ning, et al. / Sideband characteristic analysis of millimeter-wave generation based on 13
Fig. 6 shows the configuration of single-sideband ampli-
tude modulation (SSB-AM) modulation in a 0.1 THz-wave
fiber-radio link. The distributed feedback laser diode
(DFB-LD) generates a continuous wave, which is subse-
quently applied to a dualarm MZM. Then, OCS optical
mm-wave is obtained by means of 50 GHz RF clocks.
Fig. 7 shows the measured bit error rates (BERs) versus
the received optical power at different transmission
distances. The back-to-back receiver sensitivity, which is
defined by the received optical power when BER is 10
9
(19.11 dBm), while receiver sensitivity after 20 km
transmission is 18.83 dBm. The generated mm-wave signal
was transmitted over 20 km SMF, and received power
penalty is only 0.28 dB. The 100 Gbit/s signal spectrum is
illustrated in Fig. 8(a). It shows the typical radio signal
spectrum with a spectral width of 100 GHz between the first
two sidebands. Fig. 8(b) shows detailed 100 Gbit/s signal
spectrum, we can find that the signal at high frequency also
presents favorable spectrum charac teristics.
Fig. 5 Detected electrical harmonic frequencies as a function
of the bias of MZM
i
Fig. 6 Schematics of the AM transmitter
Fig. 7 BER curves as a function of the received optical
power at different transmission distances. Insert eye diagrams:
back to back and after 20 km transmission
(a) After beat frequency
(b) Zoomed-in spectrum for 100 GHz signal
Fig. 8 Spectrum of 100 Gbit/s modulation formats
14 The Journal of China Universities of Posts and Telecommunications 2009
4 Conclusions
In the future, the RoF downlink should have higher
communication capacity. Hence, millimeter wave generation
will be a hot research topic. In this article, we propose a
configuration for millimeter wave generation. And then, we
demonstrate this scheme can be adopted as a RoF system, and
it is achieved easily. Especially, the DC bias of MZM is
0.971.04 V, if the carrier suppression ratio is defined its value is
not lower than 10 dB. The generated millimeter wave optical
signal was transmitted over 20 km SMF, and the received
power penalty is only 0.28 dB.
Acknowledgements
This work was supported by the National Natural Science Foundation
of China (600837004, 60777010), the Hi-Tech Research and
Development Program of China (2009AA01Z253, 2007AA01Z260) and
Shuguang Fund.
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