Hemant PPT BJT Biasing H Parameters
Hemant PPT BJT Biasing H Parameters
Hemant PPT BJT Biasing H Parameters
on
BJT Biasing, Stabilization and
h-Parameters
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ApplicationBJT as an amplifier and switch
Base is located at the middle and more thin from
the level of collector and emitter
The emitter and collector terminals are made of
the same type of semiconductor material, while
the base of the other type of material
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Figure 2 (a) Transistor Types (b) Symbol of Transistor
Transistor currents
The arrow is always drawn
on the emitter
IE = IC + IB
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Transistor Current Gain
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Transistor Mode of Operation
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Transistor Configurations
Three configurations
(a) Common Base
(b) Common Emitter
(c) Common Collector
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Comparisons CB, CE, CC Configurations
S.No. Parameters Common Base Common Emitter Common Collector
Configurations Configurations Configurations
1. Input Low Medium High
Resistance
2. Output High Medium Low
Resistance
3. Current Gain Less () High () High
4. Leakage Very Small Medium Range Very High Range
Current Range
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Transistor Biasing
Main application of transistor is amplification i.e. raising the
strength of weak signal without any change in its general
shape is referred as faithful amplification.
For faithful amplification transistor must be operated in active
region.
If the transistor is not biased properly, it would work
inefficiently and produce distortion in output signal.
How a Transistor can be biased?
answer is using Biasing Circuits.
Biasing objective is to maintain the proper value of collector
current and collector voltage these values are expressed by
term Operating Point or Quiescent Point.
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Selection of Q-point
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Bias Stabilization means to maintain the factors those
responsible for the shift of Q-Point.
Q-point depends upon temperature sensitive parameters ICO,
VBE ,.
Stability factor indicates degree of change in Q-point due to
variation in temperature.
Lower the value of stability factor means less dependence of Q-
point over temperature that is desirable.
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Table 1 Variation of Transistor Parameters w.r.t. Temperature
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General Expression for Stability Factor
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Stability Factor for Fixed bias
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Stability Factor for Fixed bias with RE
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Stability Factor for Collector to Base bias with RE
IC = IB
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IC = IB
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Stability Factor for Collector to Base bias
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Stability Factor for Voltage divider bias
IC = IB
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Summary
The Q-point is the best point for operation of a
transistor for a given collector current.
The purpose of biasing is to establish a stable
operating point (Q-point).
Out of all the biasing circuits, potential divider bias
circuit provides highest stability to operating point.
For voltage divider bias value of stability factor is 1
for ideal case.
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h-Parameters
Small signal model of Transistor
Three different model for small signal analysis
h-Parameter model, hybrid pi model and re model
Hybrid model is for transistor at low frequency
Simple model and easy calculation
h-parameters are specified by manufacturer at a
typical operating point whereas the circuit is to
be analyzed may be operating at a different
operating point
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Hybrid Model of Transistor
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S.no. h-parameter meaning condition
1. h11 Input Impedance Output is shorted
2. h21 Forward Current Gain Output is shorted
3. h12 Reverse voltage gain Input open
4. h22 Output Admittance Input Open
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Analysis of CE Amplifier
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Analysis of CE Amplifier with RE
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Analysis of CC Amplifier
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Analysis of CB Amplifier
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DC Model for CE amplifier
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DC Model of BJT
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AC Model of BJT
Remove all DC Sources or set DC source at
zero value.
Short all Capacitors(Coupling and bypass
capacitors)
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AC Model for CE Amplifier
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DC Model for CB Amplifier
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AC Model for CB Amplifier
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DC Model for CC Amplifier
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AC Model for CC Amplifier
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References
[1]Jacob Millman, Christos C Halkias and Satyabrata Jit, Millmans
Electronic Devices and Circuits, TMH publications, third edition, pp.no.
307-324, 372-391, 2011.
[2]U.Mahadevaswamy, Analog electronic circuits: a simplified approach,
Pearson education ,pp.no. 129-217,231-250, First edition, 2010.
[3] N N Bhargava, D C Kulshreshtha and S C Gupta, Basic Electronics and
Linear Circuits, TMH Publications, pp.no. 222-259, First edition,56th
reprint, 2011.
[4] V K Mehta and Rohit Mehta, Principles of Electronics, S.Chand
publication, pp.no. 192-239. First edition, Reprint 2013.
[5] Rajiv Tiwari , Electronic Devices & Cicuits-I, Genius Publications ,12th
revised edition pp.no. 5.1-6.12, 2014.
[6] Dr. A P Vajpeyi, Analog & Digital Electronics Course no. Ph-218,
Lecure no. 7 NPTEL,IIT Guwahati.
[7] U A Bakshi and A P Godse, Analog Electronic Circuit, Technical
Publications ,pp.no. 3.1-3.132, First Edition, 2008.
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For any query drop me an e-mail
kumar.hemant@vgu.ac.in
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