ELECTRONIC DEVIC

Course Code: EET 109

Chapter 6:
Field Effect Transistor
(FETs)
OVERVIEW
 Introduction of Field Effect Transistor (FET)
• JFET
• MOSFET

Junction Field Effect Transistor (JFET)

 Operation of JFET
 Characteristic of JFET
 Parameter of JFET
 Analyzed How JFETs are Biased
N channel P channel
Metal Oxide Semi conductor Field Effect Transistor (MOSFET)
 Operation of MOSFET
 Characteristic of MOSFET E
 Parameter of MOSFET
 Analyzed How MOSFETs are Biased
 Troubleshoot FET circuit
D
2
OVERVIEW Transistor

Bi-Polar Junction Field Effect

Transistor Transistor
( BJT) (FET)

Junction Field Effect Metal Oxide Semiconductor

Transistor Field Effect Transistor
(JFET) (MOSFET)

D-MOSFET E-MOSFET
n channel p channel • n channel • n channel
• p channel • p channel
WHY TRANSISTOR IS VERY IMPORTANT IN
OUR TECHNOLOGY ?
Introduction

BJT FET
• Unipolar devices
• Operate only with one
• Bipolar Device used
type of charger carrier.
both electron and hole
• It is a voltage controlled
current.
• Current controlled
device (Ic,Ib,Ie)
VS device(Vgs,Vds).
• Advantages:
• FET is very high input
resistance.
• In switching applications,
FET is faster than BJTs
when turned on and off.

5
Introduction- FET
• FET is a "Unipolar" device
that depends only on the
conduction
of electrons (N-channel) or holes
(P-channel).

• FET – a three-terminal voltage-

controlled device used in
amplification and switching
Application.

• FET is a voltage-controlled
device.

• FET high input resistance. It

very sensitive to input voltage
signals, and easily damaged by
static electricity.
JFET

JFET

Basic Structure Characteristics Parameters Biasing

n p
channel channel
JFET- Basic Structure

• The terminals of a JFET are the Source (S), Gate (G), and Drain (D).
• A JFET can be either p channel or n channel.
• The arrow on the gate points “in” for n channel & “out” for p channel.

JFET Schematic Symbol 8

JFET – Basic Operation ( DC Biasing to n channel)
• VDD provide a drain-to-source voltage and
supplies current from Drain to Source (VDS)

• VGG sets the reverse-bias voltage between gate

and source, (VGS).

• JFET is always operated with gate-source(GS)

pn-junction reverse-biased.

• GS junction never allowed to become

forward-biased because the gate material is
not designed to handle any significant amount
of current.
 it may destroy the component.
9
JFET Characteristic: Drain Characteristic Curve (DCC)
 JFET Characteristics: VGS=0

Case 1: When the gate-to-source voltage, VGS=0V.

• This is produced by shorting the gate to source junction.

• Terminal Gate and Source, both are grounded.
• The characteristic of JFET need to be explain deeply by using Drain
characteristic curve (DCC). 12
 VGS=0 ( JFET Drain Characteristic Curve) ,DCC

Y axis ID Range: 0  IDSS unit: mA

X axis VDS Range: 0 ∞ unit: V

Point Region Description

A to B Ohmic Region • ID increases proportionally with increases of V DD (VDS increases as VDD increases).
• called the ohmic region VDS and ID are related by Ohm’s Law.
B Pinch-off Voltage, VP • The Curve level off.
• ID becomes essentially constant. (VDS=Vp)

B to C Constant current • ID still constant.

(Active Region) • Because, as VDS ↑, the reverse-bias voltage from gate to drain (VGD) produces a depletion region large
enough to offset the increase in VDS.
• This current is called maximum drain current (IDSS) .

C Breakdown . • Breakdown occur when ID begins to increase rapidly with any increase in VDS.
• Can caused irreversible damage the to the device.
• so JFETs operation is always well below this value. 13
VGS = - ve ( JFET Drain Characteristic Curve) ,DCC
Case 2 : As VGS is set to more – ve value by adjusting VGG

• VGS is set to increasingly more

negative by adjusting VGG become

-1V.
• Therefore the value of VGS become =
-1V.
• A Drain Characteristic Curves is produced.

14
VGS = - ve ( JFET Drain Characteristic Curve) ,DCC

• As VGS is set to more negative

values by adjusting VGG, the
ID becomes decrease
because of the narrowing of
the channel.
• VGS =0 and Vp is benchmark
point.
• For each increasing in
negative value of VGS the JFET
reaches of their own pinch-
off point (where the point of
current constant begins) .
• This values must less than Vp
for VGS= 0. 15
 JFET Characteristics : Cutoff Voltage, VGS (off)
• The value of VGS will be given in Data Sheet.
• The value of VGS that makes ID approximately
zero is called Cutoff voltage, VGS(off) .

• When VGS(off) (a very large –ve value), ID ≈ 0.

• When VGS=0, ID= maximum IDSS.

• The JFET must be operated between V GS=0

and VGS(off).
The operating limits of JFET are:
ID≈0 VGS=VGS(off)
ID=IDSS VGS = 0

• Pinch-off voltage (Vp) and cutoff voltage

(VGS(off)) are both the same value, but opposite
in sign.
• Example: VGS(off) = -5V, then VP = +5V. 16
 POP QUIZ 1 - SUBMIT

Draw and explain each point of Drain

Characteristic Curve (DCC).

Hint:
• Axis/unit
• Point A,B,C.(Name the region).
• Point & Value Pinch off voltage ,Vp.
• Point & Value Cutoff voltage, Vgs(off).
JFET Characteristics ( n vs p channel)
N -channel P -channel

• The basic operation of P-channel JFET is the same as for an

n- channel device except:
• P-channel JFET requires a negative VDD and positive VGS
• For p-channel, VGS(off) is positive and for n-channel JFET,
VGS(off) is negative 18
 POP- QUIZ 2- SUBMIT
For the JFET in Figure below, given VGS(off) = -4V and IDSS =12mA.
Determine minimum value of VDD required to put the device in the
constant-current region of operation when VGS = 0V. Draw the
complete DCC for this JFET.
Solution:
1) Identify type of channel ( n or p type)?
2)List out all the info given:

VGS(off) = -4V VGS = 0V (constant region)

IDSS = 12mA   =??

19
 TAKE HOME QUIZ 1

Q) A particular n-channel JFET has a VGS(off)= - 5V and IDSS= 10mA

a) Draw the complete DCC of the JFET.
b) What is Vp for the JFET ?
c) What is ID when VGS= -7V?

20
 SUMMARY of DCC
• The range of VGS values from zero to VGS(off)  controls the amount of ID .

• For n channel JFET VGS(off) is negative.

• For p channel JFET VGS(off) is positive.

• So that, the relationship between ID and VGS is very importance.

• For DCC show value of VGS.

• Y AXIS unit:

• X AXIS unit:

• Equation involved 
JFET Characteristics :Transfer Characteristics Curve,TCC

• TCC will show the value of ID at certain value of VGS .

• A JFET transfer characteristic curve is expressed approximately as:
2
(Square Law)  VGS 
I D  I DSS 1  
 V 
 GS ( off ) 

Transfer Characteristic Curve,TCC • ID can be determined for

any VGS if VGS(off) and IDSS are
known.

• VGS(off) and IDSS are usually

available from the JFET
datasheet.

Y axis ID Range: 0  IDSS unit: mA

X axis -VGS Range: 0 VGS(off) unit: V
22
• Transfer characteristic curve (blue) can be developed from
Drain characteristic curves (green) by plotting values of ID for
the values of VGS taken from drain curves at pinch-off, Vp.

• When VGS = - 2V, ID = 4.32mA.

• When VGS = 0V, ID = IDSS = 12mA. 23
 POP QUIZ 3 - SUBMIT

Q) Given IDSS of JFET n channel is 6mA and VGS(off)= -7V.

By using these values , determine the drain current, ID for
VGS=0V , VGS=-4V and VGS= -6V, VGS= -8V .
Then draw the TCC of the JFET.
When:
VGS = 0 ID = ?
VGS = -4V ID = ?
VGS = -6V ID = ?
VGS = -8V ID = ?
DATA SHEET

25
 POP-QUIZ 4 - SUBMIT
The partial datasheet below for a 2N5459 JFET indicates that
typically IDSS = 9mA and VGS(off) = -8V (maximum). Using these
values, determine the drain current for VGS = 0V, -1V and -4V and
draw the Transfer characteristic Curve (TCC) and Drain
Characteristic Curve (DCC).
Min Typ Max Units

26
 TAKE HOME QUIZ 2
Q4) Determine ID for VGS = -1V,-2V, -3 V,-4V and -5 V
for the 2N5457& 2N5458 JFET. Then draw Transfer
Characteristic Curve and Drain Characteristic Curve
for both JFET.

Solution:
From datasheet: IDSS =??, VGS(off) = ??
VGS = -1V, ID = ??
VGS = -2V, ID = ??
VGS = -3V, ID = ??
VGS = -4V, ID = ??
VGS = -5V, ID =??
27
 SUMMARY OF TTC

• Y AXIS ID Range: 0  IDSS unit: mA

• X AXIS -VGS Range: 0 VGS(off) unit: V

2
• Equation involved   
VGS
Square Law I D  I DSS 1  
 V 
 GS ( off ) 
 JFET

Parameters

Basic Structure Characteristics Biasing

Forward
Forward Transconductance,gm
Transconductance,gm Input
Input Resistance,Rin
Resistance,Rin
 JFET Parameters: Forward Transconductance
• Forward Transfer Conductance, gm is the changes in drain current
(ΔID) based on changes in gate-to-source voltage (ΔVGS) with VDS is
constant.
• The value is larger at the top of the curve (near VGS=0) but become
smaller as you increase VGS (near VGS(off)).

30
• A data sheet normally gives the value gmo @ gfs, and then we can calculate an
approximate value for gm using at any point on the transfer characteristic curve
by using:

• Unit: Siemens (S)

• When the value of gm0 is not available in data sheet , it can be calculate using this
formula:

31
 POP-QUIZ 5
Q5) By refering data sheet for a 2N5457 JFET. Determine
transconductance for VGS = -4V and find ID at this point.

32
 JFET Parameters : Input Resistance, Rin

• Since JFET operates with GS-junction reverse-biased for operation ,

which makes the input resistance (Rin) becomes so large at the gate.

• This high input resistance is one advantage of using JFET over BJT.

• This input resistance Rin can be calculated at different VGS using :

Where:
IGSS = Gate Reverse Current (if not given refer data sheet)

• The value of input resistance is absolute value (no sign).

33
 POP- QUIZ 6

Calculate input resistance, RIN if IGSS= -2nA and VGS= -20V

Solution:

34
 TAKE HOME QUIZ 3

Q7) For a 2N5459 JFET ,determine the forward

transconductance, drain current and input resistance
for VGS= -7V if IGSS= -2nA.

35
 6.3. JFET Biasing
JFET

Biasing

Basic Structure Characteristics Parameters Gate Bias

Gate Bias

Mid point Voltage Current

Self- Bias
Bias Divider Bias Source Bias

36
SELF- BIAS JFET
Bias Circuit

Self-Bias Mid point Voltage Current

Gate Bias
Bias Divider Bias Source Bias
Circuit Q point Advantages&
Is = ID (VGS,ID) Disadvantages
 JFET Biasing- 1) Self bias

• Self-bias is the most common type of biasing method for JFETs.

• JFET must be operated such that the gate-source junction is always reverse biased.
• To keep the GS-junction reverse biased:
(a). VGS will be -ve for n-channel JFET (b). VGS will be +ve for p-channel JFET.
• It can be achieved using self-bias arrangement as shown in figure below.
• The gate resistor,RG : not affect the bias because it has essentially no volt drop
across it.
• Therefore, the gate remains 0V.
• RG only to force the gate to be 0V and isolate an
ac signal from ground in amplifier applications.
• Self-biased JFETs:

ID = IS for all JFET circuits

38
For n-channel JFET
• IS through RS produces a voltage drop, making the
Source +ve with respect to ground.
• Since, IS = ID and VG = 0, VS = IDRS.

• So: VGS = VG – VS = 0 – IDRS

 (n channel) VGS = -IDRS

For p-channel JFET

• IS through RS produces a –ve voltage at Source,
making the Gate +ve with respect to ground.
• Since, IS = ID, and VG = 0, -VS = –IDRS

VGS = VG – (– VS ) = 0 – (– IDRS) 39
• For the drain voltage (VD) with respect to ground is determined as follows:

KVL Drain to Source:

 
+
∴
  𝑉 =𝐼 𝑅
𝑆 𝐷 𝑆

 
+

40
 POP- QUIZ 7
Find VDS and VGS if the drain current, ID of
approximately 5mA is produced.

41
KVL Drain to Source:

KVL Gate to Source:

42
 TAKE HOME QUIZ 4
Determine VD, VS, VDSand VGS when ID = 8mA.

Ans:
VS = 3.12 V
VD = 5.12 V
VDS = 2 V
VGS = -3.12 V
43
SELF- BIAS
JFET
Bias Circuit

Mid point Voltage Current Source

Self-Bias Bias
Gate Bias
Divider Bias Bias

Circuit Q point
Is = ID (VGS,ID)
Self bias - Q-Point
• The basic approach to establishing a JFET bias point is to
determine the ID for a desired value of VGS or vice versa.
• For a desired value of VGS, ID can be determined from:
(a) Transfer characteristic curve
(b) Formula:

• Then, calculate the required value of RS using the following

relationship.

45
 POP- QUIZ 8 ( Using Formula)
Determine the value of RS required to self bias
a n channel JFET with IDSS = 10mA and
VGS(off) = -15V. VGS is to be -5V.

46
 POP- QUIZ 9(Using Transfer Characteristic Curve)
Determine the value of RS required to self bias
a n channel JFET that has the transfer
characteristic curve shown below at VGS= -5V.
Q point:
ID (mA)
VGS= -5 V
ID= ??

-VGS(V) 47
 Self bias – Biasing-graphical Analysis
• The Transfer characteristic curve of a JFET can be use to
determine the Q point ( ID and VGS) of self bias circuit.
• To determine the Q point:
– Make a self-bias DC load line on the graph of Transfer
Characteristic given.
• First, establish dc load line by:
i) calculating VGS when ID=0.
ii) calculate VGS when ID=IDSS
ID= 0 VGS=-IDRS
ID=IDSS. VGS=-IDRS

• With 2 points, draw dc load line on the transfer characteristic curve. 48

 POP- QUIZ 10
Determine the Q point for the JFET circuit below.

49
• First, establish dc load line by:
i) calculating VGS when ID=0.
ii) calculate VGS when ID=IDSS
ID= 0 VGS=-IDRS  ID= 0
= (0)(470Ω) VGS = 0 V
=0V
ID=IDSS. VGS=-IDRS  ID=IDSS.
= (10mA)(470Ω) VGS=- 4.7V
= - 4.7V

• With 2 points, draw dc load line on the transfer characteristic

curve.

50
• The point where the line intersect the transfer characteristic
curve is the Q-point of the circuit.
51
 TAKE HOME QUIZ 5
Determine the Q point for the JFET circuit below.

ID(mA)
13
12
11
470Ω 10
9
8
7
6
5
280Ω 4
3
2
1
-VGS 7 6 5 4 3 2 1
0
0
 JFET
Bias Circuit

Mid point Bias

Voltage Current
Self-Bias Gate Bias
Divider Bias Source Bias
Circuit
ID = 0.5IDSS
 Self bias – Midpoint Bias
• Midpoint biasing – It is usually desirable to bias a JFET
near the midpoint of its transfer characteristic curve (TCC)
where ID = 0.5IDSS when VGS= VGS(off)/ 3.4.
• Under signal condition, midpoint bias allows the max
amount of drain current swing between 0 and IDSS.

• Midpoint biasing
ID = 0.5IDSS and

• By selecting VGS = VGS(off) /3.4  should get a midpoint bias

in terms of ID . 54
• To set the Drain Voltage (VD) at midpoint :

(to select a value of RD to produce the desired voltage drop.)

• The value of RD needed can be determined by taking half of

VDD and dividing it by ID:

• RG, it’s value is arbitrarily large to prevent loading on the

driving stage in a cascaded amplifier arrangement.
55
Midpoint biasing:
ID = 0.5IDSS
 POP- QUIZ 11
By referring datasheet ( 2N5457 JFET) , select resistor
value for RD and RS to set up an approximate midpoint
bias. Use minimum datasheet values when given;
otherwise, VD should be approximately 6V(one-half of
VDD).

57
Solution:

58
 JFET
Bias Circuit

Gate Bias
Mid point Voltage Current
Self-Bias
Bias Divider Bias Source Bias

Circuit
JFET Biasing- 2) Gate- bias
• Gate supply voltage (-VGG) is used
to ensure GS-junction is reverse-
biased.

• Since there is no gate current

(IG), there is no voltage dropped
across RG.
So, VGS = -VGG.

• RG  to prevent input signal from

being shorted to gate supply
through low reactance of input
coupling capacitor.
60
• To find ID:

Disadvantage
Gate bias does not provide a stable Q-
point value of ID from one JFET to another.

61
 JFET
Bias Circuit

Voltage Divider Bias

Mid point Current
Self-Bias Gate Bias
Bias Source Bias
Q point
Circuit (VGS,ID)
JFET Biasing- 3) Voltage-Divider bias
• The voltage at source, VS of the JFET must
be more +ve than the voltage at gate,VG
in order to keep the GS-junction reverse
bias. Since ID=IS.

• Source voltage:

• Gate voltage:

• Gate-to-source voltage:

• Source voltage:
N channel JFET VDB • Drain current: 63
 POP- QUIZ 12

Determine ID and VGS for the JFET with voltage divider

bias below, given that for this particular JFET the
parameter values are such that VD = 7V.

64
Solution:
Determine ID and VGS

65
 TAKE HOME QUIZ 6
Given that VD = 6V,
determine the ID and VGS .

Ans:

ID = 2.353mA
VGS = -4.290V
66
Voltage Divider Bias – Biasing-graphical(Q point)
• By using the transfer characteristic curve to
determine the approximate Q-point, we must
establish the two points for the DC load line.

1st point: ID= 0 VGS=VG-VS  ID= 0

VS = ID RS = (0)(RS) VGS = VG
VGS=VG-VS = VG – 0= VG

2nd point: VGS=0 VGS=ID = VG - VGs = VG  VGS=0

RS RS ID=VG
RS .

67
• The point at which the DC load line intersect with
transfer characteristic curve is Q-point.
68
 POP- QUIZ 13
Determine the approximate Q-point for the JFET with the
voltage-divider bias below and also given the transfer characteristic
curve .

12
0
11
10
9
8
7

ID (mA)
6
5
4
3
2
1
0
-6 -5 - 4 -3 -2 -1 0 1 2 3 4

VGS(off)

69
 Solution:
ID= 0 VGS=VG-VS  ID= 0
1st point: VS = ID RS = (0)(RS) VGS = VG
VGS=VG-VS = VG – 0= VG

VGS=0 ID = VG - VGs = VG  VGS=0

2nd point: RS RS ID=VG
RS .

For 1st point:

2nd point:

70
1st point:
ID= 0 VGS=VG  ID= 0
VGS =
VGS=0 ID = VG - VGs = VG  VGS=0
RS RS ID=VG =
RS .
2nd point:

Ans:

71
 TAKE HOME QUIZ 7
Determine the approximate Q-point for the JFET with the
voltage-divider bias below and also given the transfer characteristic
curve .
12
0
11
10
9
8
7

ID (mA)
6
5
4
3
2
1
0
-6 -5 -4 -3 -2 -1 0 1 2 3 4
1.2kΩ
VGS(off)
 JFET
Bias Circuit

Current Source Bias

Mid point Voltage
Self-Bias Gate Bias
Bias Divider Bias

Circuit
 JFET Biasing- 3) Current Source - Bias
• Current source bias: for increasing
Q-point stability of self biased JFET by
making value of ID independently of
VGS
• It can be accomplished by using
constant current source in series with
JFET source.
• From figure, BJT acts as constant –
current because IE is constant if
VEE>>VBE.
• FET also can be used as constant
current source. ID= IE
IE = VEE - VBE = VEE
RE RE
• ID= IE ( ID remains constant for any transfer
characteristic curve as indicated by the
horizontal line 74
Advantage
• provide the most
stable Q-point value
of ID.

Disadvantage
• circuit complexity
makes it undesirable
for most
applications.
75