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    The EKV Model: Work by Enz, Krummenacher, and Vittoz (Enz Et Al. 1995)

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    Srinivasan Ramasamy
    The EKV Model version 2.6 describes a MOSFET model developed by Enz, Krummenacher, and Vittoz. It uses the bulk node as the reference voltage and models MOSFET operation symmetrically in forward and reverse. The model accurately captures behavior in weak, moderate, and strong inversion and considers geometry, doping profiles, and other process dependencies. It provides a single expression for drain current and models parasitic capacitances, velocity saturation, mobility degradation, noise, and other second-order effects. The model benefits from continuity in all expressions and a reduced parameter set.

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    The EKV Model: Work by Enz, Krummenacher, and Vittoz (Enz Et Al. 1995)

    Uploaded by

    Srinivasan Ramasamy
    42 views19 pages
    The EKV Model version 2.6 describes a MOSFET model developed by Enz, Krummenacher, and Vittoz. It uses the bulk node as the reference voltage and models MOSFET operation symmetrically in forward and reverse. The model accurately captures behavior in weak, moderate, and strong inversion and considers geometry, doping profiles, and other process dependencies. It provides a single expression for drain current and models parasitic capacitances, velocity saturation, mobility degradation, noise, and other second-order effects. The model benefits from continuity in all expressions and a reduced parameter set.

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    SSD_IV_unit

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    The EKV Model version 2.6 describes a MOSFET model developed by Enz, Krummenacher, and Vittoz. It uses the bulk node as the reference voltage and models MOSFET operation symmetrically in forward and reverse. The model accurately captures behavior in weak, moderate, and strong inversion and considers geometry, doping profiles, and other process dependencies. It provides a single expression for drain current and models parasitic capacitances, velocity saturation, mobility degradation, noise, and other second-order effects. The model benefits from continuity in all expressions and a reduced parameter set.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    42 views19 pages

    The EKV Model: Work by Enz, Krummenacher, and Vittoz (Enz Et Al. 1995)

    Uploaded by

    Srinivasan Ramasamy
    The EKV Model version 2.6 describes a MOSFET model developed by Enz, Krummenacher, and Vittoz. It uses the bulk node as the reference voltage and models MOSFET operation symmetrically in forward and reverse. The model accurately captures behavior in weak, moderate, and strong inversion and considers geometry, doping profiles, and other process dependencies. It provides a single expression for drain current and models parasitic capacitances, velocity saturation, mobility degradation, noise, and other second-order effects. The model benefits from continuity in all expressions and a reduced parameter set.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 19

    The EKV Model

    version 2.6

    work by Enz, Krummenacher, and Vittoz


    (Enz et al. 1995)
    MODEL FEATURES

    • Uses the bulk node as the reference for all voltages.


    • Symmetric forward/reverse operation of the MOSFET.
    • Modeling of weak and moderate inversion to provide accurate
    predictions of lowvoltage,
    • low-current designs.
    • Geometry- and process-related dependencies.
    • Effects of doping profiles.
    • Single-expression model that preserves continuity of all
    derivatives
    • Thermal and flicker noise modeling
    1.LONG-CHANNEL DRAIN CURRENT
    MODEL
    • Bulk node is chosen as the reference node
    -to exploit the intrinsic symmetry

    drain current is,


    • the model describes
    the weak,
    moderate, and strong inversion
    regimes of operation with a single expression

    • only parameter specified for both


    1.thecharge/transcapacitance model
    2.thermal noise model,
    is TOX (or Cox)
    2.MODELING SECOND-ORDER EFFECTS
    OF THE DRAIN CURRENT
    • velocity saturation,
    • mobility degradation,
    • channel-length modulation,
    • charge-sharing,
    • reverse short-channel effect
    (a)Velocity Saturation and Channel-length Modulation

    • Body factor by replacing L by Leq to include


    both effects. where,

    • Reduction in the effective channel length due to CLM is

    • increase in the effective channel length due to velocity


    saturation is,
    (b) Mobility Degradation due to Vertical Electric Field

    KP is the transconductance parameter

    ϴ is a model parameter called the mobility reduction


    coefficient
    3.MODELING OF CHARGE STORAGE
    EFFECTS
    • to predict the dynamic performance, a model for the
    capacitances or stored charges is also required
    All parasitic capacitances are as follows
    4.THE NOISE MODEL

    • inherent noise of MOS transistors

    – Where
    MOS MODEL 9
    benefits

    • The consistency of current and charge descriptions by using the


    same carrier-density and electrical-field expressions.
    • Accurate prediction of the transition from weak to strong
    inversion.
    • Accurate prediction of the transition from linear to saturation
    region.
    • Continuity in all charges and current expressions and their
    derivatives.
    • A reduced parameter set to describe an individual transistor.
    MOSA1 MODEL
    • based on our unified charge control model (UCCM) and the
    universal FET model
    • models exhibit improved accuracy over the basic MOSFET
    models
    • Secondary effects are
    velocity saturation in the channel,
    the channellength modulation (CLM),
    the threshold voltage shift due to DBIL
    the effects of bulk charge,
    the bias-dependent average low-field mobility
    self-heating
    • Sub-threshold current is very important since it has consequences
    for the
    bias and logic levels
    needed to achieve
    satisfactory off-state in digital operations

    • To correctly model the sub-threshold operation of MOSFETs,


    - we need a Unified charge control model
    Unified MOSFET I –V Model
    (unified drain current model)
    • to establish a continuous expression for the I –V characteristics,
    expressing the drain current in each regime
    then make smooth transitions between them

    • we want the model to be extrinsic


    • to bridge the transition between the linear and the saturation
    regimes
    – with one single expression.

    • following extrinsic, universal interpolation expression


    •From simple velocity saturation model

    •subthreshold saturation current is obtained for Vds > 2Vth


    in the above equation,

    causing the dependence on Vds to vanish.


    Effects and Modeling of Process
    Variation and Device Mismatch
    • process variation and manufacturing uncertainty

    • difficulty in controlling the variation in different fabrication


    steps

    • two categories
    – interdie variation
    – intradie variation

    • The intradie device variation die-/wafer-level process


    variability in
    oxide thickness & doping profile
    This is called local process variation and mismatch(LPVM)
    THE INFLUENCE OF PROCESS VARIATION
    AND DEVICE MISMATCH
    1. The Influence of LPVM on Resistors:

    • CMOS and BICMOS technologies offer several different


    resistors,
    diffusion n+/p+ resistors,
    n+/p+ poly resistors,
    n-well resistor

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