Tunnel

• A tunnel diode is a very heavily doped p-n junction diode.
In a Tunnel diode electric

current decreases as the applied voltage increases, and at high voltage, it works as an
ordinary p-n junction diode. In the Tunnel Diode, electric current is due to the
“Tunneling effect”.
• Due to its fast switching ability, it is used in high-frequency oscillators and amplifiers.
Due to the tunneling effect, charge carries moves across the depletion layer at very low
voltage. The circuit shown below is the symbolic diagram of the Tunnel diode. In tunnel
diode the p-terminal acts as an anode and the n-terminal acts as a cathode.
IMPATT DIODE
 A wide variety of solid state diodes and transistor have
been developed for microwave use.
IMPact ionization Avalanche Transit-Time
Function as microwave oscillator.
Used to produce carrier signal for microwave transmission
system.
IMPATT can operate from a few GHz to a few hundred GHz
(1 to 300 GHz )
Impact Avalanche and Transit-Time (IMPATT) Diode, also
called Avalanche transit-time diodes
Multilayer diodes of several different types used to generate
microwave power
In contrast to (tunnel diodes the negative resistance of
avalanche-and-transit time diodes appears only at super high
frequencies.
Avalanche-and-transit time diodes can be made from
structures of the p+-n-i-n+ type (the Read diode) or the p-i-n,
p-n, p+-n, and p-n+ types
IMPATT DIODE Operation
 The diode is operated in reverse bias near
breakdown, and both the N and N- regions are
completely depleted
 Because of the difference in doping between
the "drift region" and "avalanche region", the
electric field is highly peaked in the avalanche
region and nearly flat in drift region.
 In operation, avalanche breakdown occurs at
the point of highest electric field, and this
generates a large number of hole-electron pairs
by impact ionization.
 The holes are swept into the cathode, but the
electrons travel across the drift region toward
anode.
 As they drift, they induce image charges on the
anode, giving rise to a displacement current in
Figure: Impatt Diode Operation
the external circuit that is 180° out of phase
with the nearly sinusoidal voltage waveform
TRAPATT Diode
• Introduction Trapped Plasma Avalanche Triggered Transit mode Prager High

efficiency microwave generator capable of operating from several hundred MHz to
several GHz n+ -p -p+ or (p+ -n –n+) The doping of the depletion region is such that
the diodes are well “punched through” at breakdown; i.e the dc electric field in the
depletion region just prior to breakdown is well above saturated drift velocity level.
• Principles of Operation A high field avalanche zone propagates through the diode and
fills the depletion layer with a dense plasma of electrons and holes that become trapped
in the low field region behind the zone
•Voltage and Current waveforms
•At point A the electric field is uniform throughout the sample and its magnitude is large but less than the
value required for avalanche breakdown. The current density is At the instant of time at point A, the diode
current is turned on.
•The charge carriers present are those due to thermal generation, hence the diode initially charges up like
a linear capacitor, driving the magnitude of electric field above the breakdown voltage. When a sufficient
number of carriers are generated, the particle current exceeds the external current and the electric field is
depressed throughout the depletion region, causing the voltage to decrease. (B to C)
•(B to C) During this time interval the electric field is sufficiently large for the avalanche to continue, and a
dense plasma of electrons and holes are created. Some of the electrons and holes drift out of the ends of the
depletion layer, the field is further depressed and “traps” the remaining plasma. The voltage decreases to point
D. A long time is required to remove the plasma because the total plasma charge is large compared to the
charge per unit time in the external current.
•At point E the plasma is removed, but a residual charge of electrons remains in one end of the depletion
layer and a residual charge of holes in the other end. As the residual charge is removed, the voltage increases
(E to F). At F, all the charge that was generated internally has been removed.
•From point F to G, the diode charges up again like a fixed capacitor. At G, the diode current goes to zero
for half a period and the voltage remains constant at VA until the current comes back on and the cycle repeats
The electric field expression
•Thus the time t at which the electric field reaches Em at a given distance x into
the depletion region is Differentiating w r t time t
•- nominal transit time of the diode in the high field.
•Therefore the TRAPATT mode is still a transit-time mode That is the time delay
of carriers in transit (time between injection and collection) is utilized to obtain a
current phase shift favorable for oscillation.

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• A tunnel diode is a very heavily doped p-n junction diode.

In a Tunnel diode electric

• Introduction Trapped Plasma Avalanche Triggered Transit mode Prager High

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