EECE 311: Electronic Circuits

Part 1
Review of MOSFETs and BJTs

 For amplification:
 MOSFET in Saturation (NMOS)  BJT in Active mode (NPN)

2
 Current-Voltage Characteristics
 MOSFET in SAT  BJT in Active
vBE
VT vCE
1 W vDS iC I S e (1  )
iD  n Cox (vGS  Vt ) (1 
2
) VA
2 L VA vBE
VT
iG 0 IS e
iB 

VA VA' L

 Low-Frequency Small-Signal Hybrid-π Models

3
 Current-Voltage Characteristics
 MOSFET in SAT  BJT in Active
vBE
VT vCE
1 W vDS iC I S e (1  )
iD  n Cox (vGS  Vt ) (1 
2
) VA
2 L VA vBE
VT
iG 0 IS e
iB 

VA VA' L

 Low-Frequency Small-Signal Hybrid-π Models

4
 Transconductance and Output Resistance
 MOSFET  BJT
I
I gm  C
gm  D VT
VOV
2 VA  VCE VA
rO   VBE /VT
V V V IC IS e
rO  A DS  1 ' WA 2
ID 2 k  L VOV 
r 
gm
 Low-Frequency Small-Signal T Models

5
 Intrinsic Gain
 MOSFET (gate to drain)  BJT (base to collector)

6
Example: Find ro , g m and A0
 Given:
 NMOS MOSFET  NPN BJT
 I 0.1 mA 
D I C 0.1 mA
 V ' 5 V μm 
A VA 35 V
 W 4 μm 
VT 25 mV
 L 0.4 μm 
 100

nCox 267 μA V 2
 Solution (neglect VA effect in DC analysis)
1 W 2
I D  n Cox VOV
2 L
 VOV 0.27 V
VA ' L I
ro  1 20 k g m  C 4 mA/V
 C 
2 n ox L
W
V 2
OV VT
I
gm  D 0.73mA V A0  g m r0  1400 V/V
VOV
2
A0  g m r0  14.6 V/V A0 becomes -183 V/V if W /L is 50μm / 5μm

7
Build a Current Source
 The Basic (NMOS) MOSFET Current Source
 Q1 SAT since VDS  VDS  Vt
1 W 
I D1  kn '   (VGS  Vtn ) 2
2  L 1
VDD  VGS
I D1 I REF 
R
 Q 2 SAT when Vo VOV
1 W 
I D 2  kn '   (VGS  Vtn ) 2 I o
2  L 2
Matched
MOSFETs  I o 
W
L   2
have same
k’ and Vt
I REF W
L   1

8
The Basic MOSFET Current Source

 Why is this interesting?

9
 Considering Channel-Length Modulation (VA)

forbidden
ideal

What is the ideal value of

output resistance for a current source?
Assumes VA1=VA2

10
Proof of result in previous slide

11
 Example
Given: VDD = 3 V, IREF = 100 mA, design for IO = 100 mA.
Q1 and Q2 are matched with L = 1 mm, W = 10 mm,
Vt = 0.7 V, k’n = 200 mA/V2. Do not neglect l in DC analysis.

 What is the lowest VO for current source operation?

 Given V’A = 20 V/mm, find the output resistance of the current source
 Find the change in IO when VO changes by +1V

12
 Solution
W  2 V 
I D1 I REF  12 kn'   VGS  Vt   1  GS  VA1 VA' L1 20 V
 L 1  VA1 
2 V 
100 100(10) VGS  0.7   1  GS 
 20 
 VGS 1.008 V
V V 3  1.008
R  DD GS  19.91 K
I REF 0.1 mA
Vo (min) VOV VGS  Vt 1.008  0.7 0.31 V
Output resistance:
V 20
Ro ro 2  1 ' WA 2 2  208 K
2 k n  L VOV 100  10 0.312

Change in output current:

Vo Vo 1V
Ro   I o   4.8 A
I o Ro 208K
13
 Solution
W  2 V 
I D1 I REF  12 kn'   VGS  Vt   1  GS  VA1 VA' L1 20 V
 L 1  VA1 
2 V 
100 100(10) VGS  0.7   1  GS 
 20 
 VGS 1.008 V
V V 3  1.008
R  DD GS  19.91 K
I REF 0.1 mA
Vo (min) VOV VGS  Vt 1.008  0.7 0.31 V
Output resistance:
V 20
Ro ro 2  1 ' WA 2 2  208 K
2 k n  L VOV 100  10 0.312

Change in output current:

Vo Vo 1V
Ro   I o   4.8 A
I o Ro 208K
14
 Simple MOSFET Current Mirror

Note that this circuit and the previous one implement actually a current “sink”,
not a current “source”. How do I build a current source?

Question: What is the small-signal equivalent circuit of this current mirror?

15
 Simple MOSFET (PMOS) Current Source

 Small-signal equivalent circuit (how do we derive this?)

16
 The Basic NPN BJT Current Source

 Neglecting the base current (   )

and as long as Vo > 0.3 V = VCE(EOS)
V  VBE
I REF  CC
R
VBE
VT
I C1 I S1e I REF
VBE
VT
I C 2 I S 2 e I o
I C 2 I S 2 AE 2 AE 2
   let m 
I C1 I S1 AE1 AE1

 I o I REF m Current source!

Q1's emmiter area  AE1
Q 2 's emmiter area  AE 2

17
 LM 324 op-amp internal circuit

18
  Considering base current
with m = 1 (equal BJT areas)
IC
I REF I C  2

I o I C

 Error term is 2/b

 Considering the base current and
different BJT areas

 How do we include the Early Effect?

19
 Simple BJT Current Mirror

Again, this is a current “sink”, not current “source”.

How do I build a current source? Hint: PNP

What is the small-signal equivalent of this circuit? Similar to MOSFET: Ro = ro2

20
Common Source Amplifier with Resistive Load (Review from 310)
Voltage gain, input resistance, output resistance
Common Source Amplifier with Active Load
Replace resistor with ideal current source

 Small-Signal Analysis

By inspection,
Ri 
Ro ro

vo  g m vgs  ro
vo
vgs vi  Av   g m ro  A0
vi

22
Common Source Amplifier with Active Load
Replace resistor with ideal current source

 Small-Signal Analysis

By inspection,
Ri 
Ro ro

vo  g m vgs  ro
vo
vgs vi  Av   g m ro  A0
vi

23
CMOS Common Source Amplifier

24
CMOS Common Source Amplifier

25
 Small-Signal Analysis of CMOS Common-Source Amplifier
 Small-signal equivalent of Q3-Q2 is simply ro2

Ri 
Ro ro1 // ro 2

vo
Av   g m1 ro1 / / ro 2 
vi

26
 Small-Signal Analysis of CMOS Common-Source Amplifier
 Small-signal equivalent of Q3-Q2 is simply ro2

Ri 
Ro ro1 // ro 2

vo
Av   g m1 ro1 / / ro 2 
vi

27
CMOS Common-Source Amplifier

• Voltage at gate of Q2 is a pure DC level (VBIAS)

• In small-signal analysis, Q2 appears as simply ro2
• In fact: The resistance seen looking into MOSFET drain,
with gate and source at DC levels is equal to ro (to ground)
28
CMOS Common-Source Amplifier

• Voltage at gate of Q2 is a pure DC level (VBIAS)

• In small-signal analysis, Q2 appears as simply ro2
• In fact: The resistance seen looking into MOSFET drain,
with gate and source at DC levels is equal to ro (to ground)
29
Gate at signal ground
Drain

Ri 
Source at signal ground Ro ro1 // ro 2

vo
Av   g m1 ro1 / / ro 2 
vi

30
 Drain

Ri 
Ro ro1 // ro 2

vo
Av   g m1 ro1 / / ro 2 
vi

31
 Drain

Ri 
Ro ro1 // ro 2

vo
Av   g m1 ro1 / / ro 2 
vi

32
CMOS CS – Output Resistance
The small-signal resistance seen looking into MOSFET drain,
with gate and source at DC levels, is equal to ro to signal ground

From drain of Q2
(output node)
to signal ground
ro2
 Ro = ro1 // ro2
ro1

From drain of Q1
(output node)
to signal ground

33
 Example: CMOS Common-Source Amp
Given
VDD 3V
kn' 200  A/V 2
k p' 65 A/V 2
W
L 10 for all MOSFETs
Vtn  Vtp 0.6V
VAn 20V
VAp 10V
I REF 100  A
 Find:
 Input and output resistances of amplifier
 Small-signal voltage gain v /v
o i
 Limits of v to keep Q and Q saturated
o 1 2

34
 Solution:

Neglect channel-
length modulation in
DC analyses.

35
 Solution:

Neglect channel-
length modulation in
DC analyses.

36
CMOS Common-Source Cascade

 Assume identical stages

 What is the overall low-frequency gain if the per-stage gain is –42?
 What is the input resistance?
 What is the output resistance?
Common Emitter Amplifier with Active Load

 Small-Signal Analysis

By inspection,
Ri r
Ro ro

vo  g m v  ro
vo
v vi  Av   g m ro
vi

38
Common Emitter Amplifier with Active Load

 Small-Signal Analysis

By inspection,
Ri r
Ro ro

vo  g m v  ro
vo
v vi  Av   g m ro
vi

39
BJT Common-Emitter Amplifier

VCC VCC

Q3 Q2 VBIAS Q2

vo vo
IREF
Rsig vi
Q1 vi Q1
vsig

40
BJT CE – Output Resistance
The small-signal resistance seen looking into BJT collector,
with base and emitter at DC levels, is equal to ro (to ground)
VCC

 Ro = ro1 // ro2
VBIAS Q2
ro2
vo
 Av = –gm1(ro1 // ro2) ro1
vi Q1

 What is the
input resistance?
resistance looking into base, with emitter at DC level, is
equal to rp to ground (easy to prove, from small-signal analysis)41