CEF04N6

CEF04N6
Feb. 2003
N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES
6
600V , 2.5A , RDS(ON)=2.5 @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole
G
G D S
S
TO-220F
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 30 2.5 10 2.5 35 0.28 -55 to 150 Unit V V A A A W W/ C C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA
6-122
3.6 65
C/W C/W
CEF04N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current
Symbol
a
Condition
VDD =50V, L=27mH RG=9.1
Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATING
EAS IAS
500 4
mJ A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS
b
VGS = 0V,ID = 250A VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VDS = VGS, ID = 250A VGS =10V, ID = 2A VGS = 10V, VDS = 10V VDS = 40V, ID = 2A VDD =300V, ID = 4A, VGS = 10V RGEN=25
600 25
V A 100 nA
ON CHARACTERISTICS a
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 2 2.2 4 2.8 25 65 75 65 24 VDS =480V, ID = 4A, VGS =10V
6-123
4 2.5
V A S
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
50 120 150 120 31
ns ns ns ns nC nC nC
4 11
CEF04N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter DYNAMIC CHARACTERISTICS b
Input Capacitance CISS COSS CRSS
a
Symbol
Condition
Min Typ Max Unit

730 85 20
PF PF PF
Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage
VDS =25V, VGS = 0V f =1.0MHZ
DRAIN-SOURCE DIODE CHARACTERISTICS

VSD
VGS = 0V, Is =2.5A
1.6
Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
6 VGS=10,9,8,7V 5
10
ID, Drain Current(A)
4 3 2 1 0 0 2 4 6 8 10 12 VGS=6V
ID, Drain Current (A)
150 C
VGS=5V
-55 C
1.VDS=40V 2.Pulse Test
0.1 2
25 C
10
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
6-124
CEF04N6
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
1200 1000
2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100

ID=2A VGS=10V
C, Capacitance (pF)
800 600 400 200 0 0 5
Ciss
Coss Crss 10 15 20 25
6
-50 0 50 100 150 200
VDS, Drain-to Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage
1.30 1.20 1.10 1.0 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A
Figure 4. On-Resistance Variation with Temperature

1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250 A
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature

4
Figure 6. Breakdown Voltage Variation with Temperature

20 10 VGS=0V
gFS, Transconductance (S)
VDS=40V 3
Is, Source-drain current (A)

0 1 2 3 4
1 0
0.1 0.4 0.6 0.8 1.0 1.2
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation with Drain Current 6-125
Figure 8. Body Diode Forward Voltage Variation with Source Current
CEF04N6
VGS, Gate to Source Voltage (V)
15 12 9 6 3 0 0 10 20 30 40
Qg, Total Gate Charge (nC)
VDS=480V ID=4A
ID, Drain Current (A)
10 1
1m
10 m s
10
0 s
10
10 0
( DS
ON
)L
im
it
0m s
D C
10
-1
TC=25 C Tj=150 C Single Pulse 10 1 10 2 10

3
10 0
VDS, Drain-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G

90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
VIN
50% 10%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10 0
D=0.5 0.2
10 -1
0.1 0.05
PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2
0.02 0.01 Single Pulse
10 -2 -5 10
10 -4
10 -3
10 -2
10 -1
10 0
10
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
6-126

CEF04N6

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CEF04N6

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Min Typ Max Unit

DRAIN-SOURCE AVALANCHE RATING

tD(ON) tr tD(OFF) tf Qg Qgs Qgd

50 120 150 120 31

Min Typ Max Unit

Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage

VDS =25V, VGS = 0V f =1.0MHZ

DRAIN-SOURCE DIODE CHARACTERISTICS

VGS = 0V, Is =2.5A

ID, Drain Current(A)

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100

800 600 400 200 0 0 5

VDS, Drain-to Source Voltage (V)

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation with Temperature

75 100 125 150

Tj, Junction Temperature ( C)

Tj, Junction Temperature ( C)

Figure 5. Gate Threshold Variation with Temperature

Figure 6. Breakdown Voltage Variation with Temperature

gFS, Transconductance (S)

Is, Source-drain current (A)

0.1 0.4 0.6 0.8 1.0 1.2

IDS, Drain-Source Current (A)

VSD, Body Diode Forward Voltage (V)

Figure 7. Transconductance Variation with Drain Current 6-125

Figure 8. Body Diode Forward Voltage Variation with Source Current

TC=25 C Tj=150 C Single Pulse 10 1 10 2 10

VDS, Drain-Source Voltage (V)

Figure 9. Gate Charge

Figure 10. Maximum Safe Operating Area

VDD t on V IN D VGS RGEN G

Figure 11. Switching Test Circuit

Figure 12. Switching Waveforms

r(t),Normalized Effective Transient Thermal Impedance

0.02 0.01 Single Pulse

Square Wave Pulse Duration (sec)

Figure 13. Normalized Thermal Transient Impedance Curve

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