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    4N252

    Uploaded by

    Taumar Morais
    The 4N25/26/27/28 are optocouplers with a phototransistor output consisting of a gallium arsenide infrared-emitting diode optically coupled to a phototransistor. They provide galvanic isolation in circuits and have a high isolation test voltage, low coupling capacity, and current transfer ratio over 100%. The devices are available in waterproof versions and different CTR rankings, and their electrical characteristics including switching times are provided.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    4N252

    Uploaded by

    Taumar Morais
    48 views8 pages
    The 4N25/26/27/28 are optocouplers with a phototransistor output consisting of a gallium arsenide infrared-emitting diode optically coupled to a phototransistor. They provide galvanic isolation in circuits and have a high isolation test voltage, low coupling capacity, and current transfer ratio over 100%. The devices are available in waterproof versions and different CTR rankings, and their electrical characteristics including switching times are provided.

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    The 4N25/26/27/28 are optocouplers with a phototransistor output consisting of a gallium arsenide infrared-emitting diode optically coupled to a phototransistor. They provide galvanic isolation in circuits and have a high isolation test voltage, low coupling capacity, and current transfer ratio over 100%. The devices are available in waterproof versions and different CTR rankings, and their electrical characteristics including switching times are provided.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    48 views8 pages

    4N252

    Uploaded by

    Taumar Morais
    The 4N25/26/27/28 are optocouplers with a phototransistor output consisting of a gallium arsenide infrared-emitting diode optically coupled to a phototransistor. They provide galvanic isolation in circuits and have a high isolation test voltage, low coupling capacity, and current transfer ratio over 100%. The devices are available in waterproof versions and different CTR rankings, and their electrical characteristics including switching times are provided.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    4N25/ 4N26/ 4N27/ 4N28

    Optocoupler with Phototransistor Output


    Description
    The 4N25/ 26/ 27/ 28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
    95 10532

    Applications
    Galvanically separated circuits for general purposes

    Features
    D Isolation test voltage (RMS) 3.75 kV D UL recognized, file No. E-76222 D Low coupling capacity of typical 1 pF D Current Transfer Ratio (CTR) of typical 100% D Low temperature coefficient of CTR

    Order Schematic
    Part Numbers 4N27/ 4N27S/ 4N28/ 4N28S 4N25/ 4N25S/ 4N26/ 4N26S Suffix: S = Waterproofed device CTR-Ranking > 10% > 20%

    Remarks
    A waterproof construction is recommended for couplers where a pure water cleaning process is used instead of a standard-soldering/ cleaning process. In this case please order the part numbers with the suffix S. The waterproof construction corresponds with the coupling system S, and does not belong to the part number itself. Standard parts are marked with the letter A. This coupling system indicator A or S is in a separate (second) line of the marking.

    Pin Connection
    B 6 C 5 E 4

    1 A (+)

    2 C ()

    3 n.c.

    TELEFUNKEN Semiconductors Rev. A1, 03-Jun-96

    95 10805

    1 (8)

    4N25/ 4N26/ 4N27/ 4N28


    Absolute Maximum Ratings
    Input (Emitter)
    Parameters Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Type Symbol VR IF IFSM PV Tj Value 5 60 3 100 125 Unit V mA A mW C

    tp 10 ms Tamb 25C

    Output (Detector)
    Parameters Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions Type Symbol VCBO VCEO VECO IC ICM PV Tj Value 70 30 7 50 100 150 125 Unit V V V mA mA mW C

    tp/T = 0.5, tp 10 ms Tamb 25C

    Coupler
    Parameters Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature
    1)

    Test Conditions

    Type

    Symbol VIO 1) Ptot Tamb Tstg

    Value 3.75 250 55 to +100 55 to +125 260

    Unit kV mW C C C

    Tamb 25C

    2 mm from case, t 10 s

    Tsd

    Related to standard climate 23/50 DIN 50014

    2 (8)

    TELEFUNKEN Semiconductors Rev. A1, 03-Jun-96

    4N25/ 4N26/ 4N27/ 4N28


    Electrical Characteristics
    Tamb = 25C

    Input (Emitter)
    Parameters Forward voltage Breakdown voltage Junction capacitance Test Conditions IF = 50 mA IR = 100 mA VR = 0, f = 1 MHz Type Symbol VF V(BR) Cj Min. 5 50 Typ. 1.25 Max. 1.5 Unit V V pF

    Output (Detector)
    Parameters Collector base breakdown voltage Collector emitter breakdown voltage Emitter collector breakdown voltage Collector dark current Test Conditions IC = 100 mA IE = 1 mA IE = 100 mA VCB = 10 V VCE = 10 V Type Symbol V(BR)CB0 V(BR)CE0 V(BR)ECO ICBO ICEO Min. 70 30 7 0.1 3.5 20 50 Typ. Max. Unit V V V nA nA

    Coupler
    Parameters Isolation test voltage (RMS) Isolation resistance IC/IF Test Conditions f = 50 Hz, t = 2 s VIO = 1 kV, 40% relative humidity VCE = 10 V, IF = 10 mA Type Symbol VIO 1) RIO 1) 4N25(S), 4N26(S) 4N27(S), 4N28(S) CTR CTR VCEsat fc 110 0.2 0.1 Min. 3.75 Typ. Max. Unit kV

    1012 1 1 0.5

    Collector emitter saturation voltage Cut-off frequency

    Coupling capacitance
    1)

    IF = 50 mA, IC = 2 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz

    V kHz

    Ck

    pF

    Related to standard climate 23/50 DIN 50014

    TELEFUNKEN Semiconductors Rev. A1, 03-Jun-96

    3 (8)

    4N25/ 4N26/ 4N27/ 4N28


    Switching Characteristics (Typical Values)
    Type 4N2528 td[ms] tr[ms] RL = 100 W (see figure 1) RL = 1 kW (see figure 2) ton[ms] ts[ms] tf[ms] toff[ms] IC[mA] ton[ms] toff[ms] IF[mA] 4 3 10 9 18 10

    IF 0 R G = 50 W tp T = 0.01

    IF

    + 10 V I C = 10 mA ; Adjusted through input amplitude

    t p = 50 ms Channel I Oscilloscope Channel II 50 W 100 W RL CL

    w 1 MW v 20 pF

    95 10793

    Figure 1. Test circuit, non-saturated operation

    IF 0 R G = 50 W tp T = 0.01

    IF = 10 mA

    +5V IC

    t p = 50 ms Channel I Oscilloscope Channel II 50 W 1 kW RL CL

    w 1 MW v 20 pF

    95 10844

    Figure 2. Test circuit, saturated operation

    4 (8)

    TELEFUNKEN Semiconductors Rev. A1, 03-Jun-96

    4N25/ 4N26/ 4N27/ 4N28


    Typical Characteristics (Tamb = 25C, unless otherwise specified)
    300 P tot Total Power Dissipation ( mW ) Coupled device ICEO Collector Dark Current, with open Base ( nA ) 250 200
    Phototransistor

    10000 VCE=10V IF=0 1000

    150 IR-diode 100 50 0 0 40 80 120

    100

    10

    1 0
    96 11875

    10 20 30 40 50 60 70 80 90 100 Tamb Ambient Temperature ( C )

    96 11700

    Tamb Ambient Temperature ( C )

    Figure 3. Total Power Dissipation vs. Ambient Temperature


    1000.0

    Figure 6. Collector Dark Current vs. Ambient Temperature


    1.000 I CB Collector Base Current ( mA ) VCB=10V

    I F Forward Current ( mA )

    100.0

    0.100

    10.0

    0.010

    1.0

    0.1 0
    96 11862

    0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF Forward Voltage ( V )

    0.001 1
    96 11876

    10 IF Forward Current ( mA )

    100

    Figure 4. Forward Current vs. Forward Voltage


    1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 30 20 10 0 10 20 30 40 50 60 70 80 Tamb Ambient Temperature ( C ) VCE=10V IF=10mA

    Figure 7. Collector Base Current vs. Forward Current


    100.00 VCE=10V IC Collector Current ( mA ) 10.00

    CTR rel Relative Current Transfer Ratio

    1.00

    0.10

    0.01 0.1
    96 11904

    1.0

    10.0

    100.0

    96 11874

    IF Forward Current ( mA )

    Figure 5. Rel. Current Transfer Ratio vs. Ambient Temperature

    Figure 8. Collector Current vs. Forward Current

    TELEFUNKEN Semiconductors Rev. A1, 03-Jun-96

    5 (8)

    4N25/ 4N26/ 4N27/ 4N28


    Typical Characteristics (Tamb = 25C, unless otherwise specified)
    100.0 IF=50mA IC Collector Current ( mA ) CTR Current Transfer Ratio ( % ) 20mA 1000 VCE=10V

    10.0

    10mA 5mA

    100

    1.0

    2mA 1mA

    10

    0.1 0.1
    96 11905

    1 1.0 10.0 100.0


    95 10976

    0.1

    10

    100

    VCE Collector Emitter Voltage ( V )

    IF Forward Current ( mA )

    Figure 9. Collector Current vs. Collector Emitter Voltage


    V CEsat Collector Emitter Saturation Voltage ( V ) 1.0

    Figure 12. Current Transfer Ratio vs. Forward Current


    50 Saturated Operation VS=5V RL=1kW

    0.8 20% 0.6 CTR=50% 0.4 0.2 10% 0 1 10 IC Collector Current ( mA ) 100

    t on / t off Turn on / Turn off Time ( m s )

    40

    30 toff 20 10 0 0 5 10 15 ton 20

    95 10972

    95 10974

    IF Forward Current ( mA )

    Figure 10. Collector Emitter Sat. Voltage vs. Collector Current


    1000

    Figure 13. Turn on/ off Time vs. Forward Current


    20 Non Saturated Operation VS=10V RL=100W toff 10 ton 5

    hFE DC Current Gain

    800 VCE=10V 600 5V 400 200 0 0.01

    t on / t off Turn on / Turn off Time ( m s ) 100


    95 10975

    15

    0 0.1 1 10 0 2 4 6 8 10 IC Collector Current ( mA ) IC Collector Current ( mA )

    95 10973

    Figure 11. DC Current Gain vs. Collector Current

    Figure 14. Turn on/ off Time vs. Collector Current

    6 (8)

    TELEFUNKEN Semiconductors Rev. A1, 03-Jun-96

    4N25/ 4N26/ 4N27/ 4N28


    Dimensions in mm
    8.6 8.4 7.82 7.42

    4.9 4.5

    2.55 2.45

    4.3 4.1

    3.3

    0.35 0.25

    2.54

    0.58 0.48

    9.6 8.4

    1.54

    6.4 6.2

    3 0.65 5.08 8.8 8.4


    technical drawings according to DIN specifications

    95 10931

    TELEFUNKEN Semiconductors Rev. A1, 03-Jun-96

    7 (8)

    4N25/ 4N26/ 4N27/ 4N28


    Ozone Depleting Substances Policy Statement
    It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

    We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

    8 (8)

    TELEFUNKEN Semiconductors Rev. A1, 03-Jun-96

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