BPW96 Data Sheets

BPW96
Vishay Semiconductors
Silicon NPN Phototransistor

Description
BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T1 ( 5 mm) package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. The viewing angle of 20 makes it insensible to ambient straylight.
Features
D D D D D D
Fast response times High photo sensitivity Standard T1 ( 5 mm) clear plastic package Angle of half sensitivity = 20 Suitable for visible and near infrared radiation Selected into sensitivity groups
94 8391
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings

Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Tstg Tsd RthJA Value 70 5 50 100 150 100 55...+100 260 350 Unit V V mA mA mW C C C K/W
tp/T = 0.5, tp 10 ms Tamb 47 C
x3s
Document Number 81532 Rev. 3, 16-Nov-99
www.vishay.com 1 (6)
BPW96
Vishay Semiconductors Basic Characteristics
Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage TurnOn Time TurnOff Time CutOff Frequency Test Conditions IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Symbol V(BR)CE
O
Min 70
Typ
Max
Unit V nA pF deg nm nm V
ICEO CCEO
l = 950 nm, IC = 0.1 mA

VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100
Ee = 1 mW/cm2,
lp l0.5
ton toff fc
1 3 20 850 620...980
200
VCEsat 2.0 2.3 180
0.3
W W W
ms ms
kHz
Type Dedicated Characteristics

Tamb = 25_C Parameter Test Conditions Collector Light g Current Ee=1mW/cm2, =950nm, VCE=5V Type BPW96A BPW96B BPW96C Symbol Ica Ica Ica Min 1.5 2.5 4.5 Typ 2.5 4.5 8 Max 4.5 7.5 15 Unit mA mA mA
Typical Characteristics (Tamb = 25_C unless otherwise specified)

200 P tot Total Power Dissipation ( mW ) 160 I CEO Collector Dark Current ( nA ) 104
103 VCE=20V 102
120 RthJA 80
40 0 0 20 40 60 80 100
101
100 20
94 8304
40
60
80
100
94 8300
Tamb Ambient Temperature ( C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Collector Dark Current vs. Ambient Temperature
BPW96
2.0 I ca rel Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0
94 8239
C CEO Collector Emitter Capacitance ( pF )
10 8 f=1MHz 6
VCE=5V Ee=1mW/cm2 =950nm
2 0 0.1 1 10 100 VCE Collector Emitter Voltage ( V )
20
40
60
80
100
94 8301
Figure 3. Relative Collector Current vs. Ambient Temperature

t on / t off Turn on / Turn off Time ( s ) 10 Ica Collector Light Current ( mA ) BPW 96 C 1 BPW 96 A 0.1 VCE=5V BPW 96 B
Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage

8 VCE=5V RL=100 =950nm
4 toff ton 0 0 2 4 6 8 10 12 14
l=950nm
0.01 0.01 0.1 Ee Irradiance ( 1 mW / cm2 ) 10
94 8296
94 8293
IC Collector Current ( mA )
Figure 4. Collector Light Current vs. Irradiance

10 Ica Collector Light Current ( mA ) BPW 96 B Ee=1 mW/cm2 0.5 mW/cm2
Figure 7. Turn On/Turn Off Time vs. Collector Current

S ( ) rel Relative Spectral Sensitivity
1.0 0.8 0.6 0.4 0.2 0 400
0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2
0.1 0.1
94 8297
l=950nm
1 10 100 VCE Collector Emitter Voltage ( V )
600
94 8348
l Wavelength ( nm )
800
1000
Figure 5. Collector Light Current vs. Collector Emitter Voltage
Figure 8. Relative Spectral Sensitivity vs. Wavelength
BPW96
0 10 20 30
S rel Relative Sensitivity
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
94 8299
Figure 9. Relative Radiant Sensitivity vs. Angular Displacement
BPW96
Vishay Semiconductors Dimensions in mm
96 12192
BPW96
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

BPW96 Data Sheets

Uploaded by

Copyright:

Available Formats

BPW96 Data Sheets

Uploaded by

Document Information

Original Description:

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

BPW96 Data Sheets

Uploaded by

Copyright:

Available Formats

BPW96

Silicon NPN Phototransistor

Absolute Maximum Ratings

tp/T = 0.5, tp 10 ms Tamb 47 C

Document Number 81532 Rev. 3, 16-Nov-99

l = 950 nm, IC = 0.1 mA

VCEsat 2.0 2.3 180

Type Dedicated Characteristics

Typical Characteristics (Tamb = 25_C unless otherwise specified)

103 VCE=20V 102

Tamb Ambient Temperature ( C )

Tamb Ambient Temperature ( C )

Figure 1. Total Power Dissipation vs. Ambient Temperature

Figure 2. Collector Dark Current vs. Ambient Temperature

Document Number 81532 Rev. 3, 16-Nov-99

C CEO Collector Emitter Capacitance ( pF )

VCE=5V Ee=1mW/cm2 =950nm

2 0 0.1 1 10 100 VCE Collector Emitter Voltage ( V )

Tamb Ambient Temperature ( C )

Figure 3. Relative Collector Current vs. Ambient Temperature

Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage

Figure 4. Collector Light Current vs. Irradiance

Figure 7. Turn On/Turn Off Time vs. Collector Current

1.0 0.8 0.6 0.4 0.2 0 400

0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2

Figure 5. Collector Light Current vs. Collector Emitter Voltage

Figure 8. Relative Spectral Sensitivity vs. Wavelength

Document Number 81532 Rev. 3, 16-Nov-99

S rel Relative Sensitivity

Figure 9. Relative Radiant Sensitivity vs. Angular Displacement

Document Number 81532 Rev. 3, 16-Nov-99

Document Number 81532 Rev. 3, 16-Nov-99

Document Number 81532 Rev. 3, 16-Nov-99

You might also like

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.