STB170NF04

N-channel 40 V, 4.4 m typ., 80 A STripFET II Power MOSFET

in a D2PAK package
Datasheet production data

Features
Order code

VDSS @TJ
max.

RDS(on)
max.

ID

PTOT

STB170NF04

40 V

< 5 m

80 A

300 W

TAB

Standard threshold drive

3

Applications

D2PAK

Automotive switching applications

Description
This N-channel enhancement mode Power
MOSFET benefits from the latest refinement of
STMicroelectronics' unique single feature size
strip-based process, which decreases the critical
alignment steps to offer exceptional
manufacturing reproducibility. The result is a
transistor with extremely high packing density for
low on-resistance, rugged avalanche
characteristics and low gate charge.

Table 1.

Figure 1.

Internal schematic diagram

, TAB

Device summary

Order code

Marking

Package

Packaging

STB170NF04

B170NF04

D2PAK

Tape and reel

October 2012
This is information on a product in full production.

Doc ID 15591 Rev 2

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www.st.com

15

Contents

STB170NF04

Contents
1

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1

Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test circuits

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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.............................................. 8

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STB170NF04

Electrical ratings

Electrical ratings
Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

40

20

VDS

Drain-source voltage (VGS = 0)

VGS

Gate-source voltage

ID (1)

Drain current (continuous) at TC = 25 C

80

ID (1)

Drain current (continuous) at TC = 100 C

80

IDM (2)

Drain current (pulsed)

320

PTOT

Total dissipation at TC = 25 C

300

Derating factor

W/C

dv/dt (3)

Peak diode recovery voltage slope

V/ns

EAS (4)

Single pulse avalanche energy

1.5

Tj

Operating junction temperature

Storage temperature

-55 to 175

Value

Unit

0.5

C/W

35

C/W

Tstg

1. Current limited by package

2. Pulse width limited by safe operating area
3. ISD 80 A, di/dt 300 A/s, VDD V(BR)DSS, TJ TJMAX
4. Starting Tj = 25 C, ID = 40 A, VDD = 30 V

Table 3.

Thermal data

Symbol
Rthj-case

Parameter
Thermal resistance junction-case max

Rthj-pcb(1) Thermal resistance junction-pcb max

1. When mounted on 1 inch FR4 2 oz Cu

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Electrical characteristics

STB170NF04

Electrical characteristics
(TCASE=25C unless otherwise specified).
Table 4.
Symbol
V(BR)DSS

Test conditions

Drain-source breakdown
voltage

ID = 250 A, VGS= 0

Min.

Typ.

Max.

40

Unit
V

VDS = 40 V,
VDS = 40 V, Tc=125 C

10
100

A
A

Gate body leakage current

(VDS = 0)

VGS = 20 V

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 A

RDS(on)

Static drain-source onresistance

VGS= 10 V, ID= 40 A

4.4

Min.

Typ.

Max.

Unit

Zero gate voltage drain

current (VGS = 0)

IGSS

Symbol
gfs (1)
Ciss
Coss
Crss
Qg
Qgs
Qgd

Dynamic
Parameter

Test conditions

Forward transconductance

VDS =15 V, ID = 40 A

90

Input capacitance
Output capacitance
Reverse transfer
capacitance

5345
1400
430

9000

VDS =25 V, f=1 MHz, VGS=0

pF
pF
pF

170

117
27
41

nC
nC
nC

Min.

Typ.

Max.

Unit

26
57

ns
ns

100
66

ns
ns

Total gate charge

Gate-source charge
Gate-drain charge

VDD=20 V, ID = 80 A
VGS =10 V
(see Figure 14)

Pulsed: pulse duration = 300 s, duty cycle 1.5%

Table 6.

Switching times

Symbol

Parameter

td(on)
tr
td(off)
tf

4/15

Parameter

IDSS

Table 5.

1.

On/off

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions
VDD= 20 V, ID= 40 A,
RG=4.7 , VGS=10 V
(see Figure 13)
VDD= 20 V, ID= 40 A,
RG=4.7 , VGS=10 V
(see Figure 13)

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STB170NF04

Electrical characteristics

Table 7.
Symbol
ISD
ISDM

(1)

VSD (2)
trr
Qrr
IRRM

Source drain diode

Parameter

Test conditions

Source-drain current
Source-drain current
(pulsed)

Min.

Max.

Unit

80
320

A
A

1.5

Forward on voltage

ISD= 80 A, VGS=0

Reverse recovery time

Reverse recovery charge
Reverse recovery current

ISD= 80 A, di/dt = 100 A/s,

VDD=20 V, Tj=150 C

(see Figure 18)

Typ.

70
180
4

ns
nC
A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300s, duty cycle 1.5%

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Electrical characteristics

STB170NF04

2.1

Electrical characteristics (curves)

Figure 2.

Safe operating area

Figure 3.

Thermal impedance

Figure 5.

Transfer characteristics

AM15419v1

ID
(A)

is
ea
ar (on)
s
i
DS
th
in ax R
ion y m
t
a
er d b
Op ite
Lim

100

100s
1ms
10ms

10
Tj=175C
Tc=25C

Single
pulse
0.10
0.1

10

Figure 4.

VDS(V)

Output characteristics
HV41290

ID(A)
VGS=10 V

HV41295

ID(A)

8V

350

300

300

VDS=15 V

250

250

7V

200

200
150

150
6V

100

50

50
5V

0
-2

Figure 6.

6/15

100

10

VDS(V)

Normalized BVDSS vs temperature

Figure 7.

Doc ID 15591 Rev 2

VGS(V)

Static drain-source on-resistance

STB170NF04
Figure 8.

Electrical characteristics

Gate charge vs gate-source voltage Figure 9.

HV41310

VGS
(V)

HV41300

C(pF)
9000

VDD=20V
ID=80A

12

Capacitance variations

TJ=25 C
f=1 MHz

8000

10

7000
6000

5000

4000
3000

2000

1000

25

50

75

100

Qg (nC)

Figure 10. Normalized gate threshold voltage

vs temperature

10

15

20

25

30

35 VDS(pF)

Figure 11. Normalized on-resistance vs

temperature

Figure 12. Source-drain diode forward

characteristics

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Test circuits

STB170NF04

Test circuits

Figure 13. Switching times test circuit for

resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load

Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit

Figure 17. Unclamped inductive waveform

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Figure 18. Switching time waveform

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STB170NF04

Package mechanical data

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

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Package mechanical data

Table 8.

STB170NF04

DPAK (TO-263) mechanical data

mm

Dim.
Min.

Typ.

4.40

4.60

A1

0.03

0.23

0.70

0.93

b2

1.14

1.70

0.45

0.60

c2

1.23

1.36

8.95

9.35

D1

7.50

10

E1

8.50

10.40

2.54

e1

4.88

5.28

15

15.85

J1

2.49

2.69

2.29

2.79

L1

1.27

1.40

L2

1.30

1.75

R
V2

10/15

Max.

0.4
0

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STB170NF04

Package mechanical data

Figure 19. DPAK (TO-263) drawing

0079457_T

Figure 20. DPAK footprint(a)

16.90

12.20

5.08

1.60

3.50
9.75

Footprint

a. All dimension are in millimeters

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Packaging mechanical data

STB170NF04

Packaging mechanical data

Table 9.

DPAK (TO-263) tape and reel mechanical data

Tape

Reel

mm

mm

Dim.

12/15

Dim.
Min.

Max.

A0

10.5

10.7

B0

15.7

15.9

1.5

1.5

1.6

12.8

D1

1.59

1.61

20.2

1.65

1.85

24.4

11.4

11.6

100

K0

4.8

5.0

P0

3.9

4.1

P1

11.9

12.1

Base qty

1000

P2

1.9

2.1

Bulk qty

1000

50

0.25

0.35

23.7

24.3

Doc ID 15591 Rev 2

Min.

Max.
330

13.2

26.4

30.4

STB170NF04

Packaging mechanical data

Figure 21. Tape

10 pitches cumulative
tolerance on tape +/- 0.2 mm
T

P0

Top cover
tape

P2

E
F
W

K0

B0

A0

P1

D1

User direction of feed

Bending radius
User direction of feed

AM08852v2

Figure 22. Reel

T

REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C

Full radius

Tape slot
in core for
tape start 25 mm min.
width

G measured at hub

AM08851v2

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Revision history

STB170NF04

Revision history
Table 10.

14/15

Document revision history

Date

Revision

Changes

16-Apr-2009

Initial release

31-Oct-2012

Modified: Figure 2, 3 and Section 4: Package mechanical data

and Section 5: Packaging mechanical data

Doc ID 15591 Rev 2

STB170NF04

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