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    VLSI Fabrication Process PDF

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    The document discusses VLSI (Very Large Scale Integration) fabrication processes. It begins by defining VLSI and its importance in allowing more logic devices to be packed into smaller areas. It then covers the key steps in the VLSI fabrication process, including silicon wafer processing, lithography, oxidation, diffusion, annealing, deposition, metallization, testing, and packaging. Some advantages of VLSI are also discussed such as lower power consumption, less testing needs, and higher reliability. Limitations like placement issues, routing issues, timing issues, and consistency issues during dynamic reconfiguration are also covered.

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    VLSI Fabrication Process PDF

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    kitcha5555
    898 views6 pages
    The document discusses VLSI (Very Large Scale Integration) fabrication processes. It begins by defining VLSI and its importance in allowing more logic devices to be packed into smaller areas. It then covers the key steps in the VLSI fabrication process, including silicon wafer processing, lithography, oxidation, diffusion, annealing, deposition, metallization, testing, and packaging. Some advantages of VLSI are also discussed such as lower power consumption, less testing needs, and higher reliability. Limitations like placement issues, routing issues, timing issues, and consistency issues during dynamic reconfiguration are also covered.

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    The document discusses VLSI (Very Large Scale Integration) fabrication processes. It begins by defining VLSI and its importance in allowing more logic devices to be packed into smaller areas. It then covers the key steps in the VLSI fabrication process, including silicon wafer processing, lithography, oxidation, diffusion, annealing, deposition, metallization, testing, and packaging. Some advantages of VLSI are also discussed such as lower power consumption, less testing needs, and higher reliability. Limitations like placement issues, routing issues, timing issues, and consistency issues during dynamic reconfiguration are also covered.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    898 views6 pages

    VLSI Fabrication Process PDF

    Uploaded by

    kitcha5555
    The document discusses VLSI (Very Large Scale Integration) fabrication processes. It begins by defining VLSI and its importance in allowing more logic devices to be packed into smaller areas. It then covers the key steps in the VLSI fabrication process, including silicon wafer processing, lithography, oxidation, diffusion, annealing, deposition, metallization, testing, and packaging. Some advantages of VLSI are also discussed such as lower power consumption, less testing needs, and higher reliability. Limitations like placement issues, routing issues, timing issues, and consistency issues during dynamic reconfiguration are also covered.

    Copyright:

    © All Rights Reserved
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    of 6

    VLSI Fabrication Process

    Om prakash
    5th sem ASCT, Bhopal
    omprakashsony@gmail.com

    Abstract
    VLSI stands for "Very Large Scale
    Integration". This is the field which
    involves packing more and more logic
    devices into smaller and smaller areas.
    Thanks to VLSI, circuits that would have
    taken boardfuls of space can now be put
    into a small space few millimeters across!
    This has opened up a big opportunity to do
    things that were not possible before. VLSI
    circuits are everywhere ... your computer,
    your car, your brand new state-of-the-art
    digital camera, the cell-phones, and what
    have you.We must have a working
    knowledge of chip fabrication to create
    effective designs and in order to optimize
    the circuits with respect to various
    manufacturing parameters. Also, the
    circuit designer must have a clear
    understanding of the roles of various
    masks used in the fabrication process, and
    how the masks are used to define various
    features of the devices on-chip.

    Introduction
    An Integrated Circuit (IC) is an electronic
    network fabricated in a single piece of a
    semiconductor material.
    The semiconductor surface is subjected to
    various processing steps in which
    impurities and other materials are added
    with specific geometrical patterns
    The fabrication steps are sequenced to
    form three dimensional regions that act as
    a transistors and interconnects that form
    the network.

    Manisha Kumari
    5 sem ASCT, Bhopal
    Manisha2686@gmail.com
    th

    Why VLSI ?
    1. Greater Functionality
    Its results in average energy savings of
    35% to 70% with an average speedup of 3
    to 7 times.
    2. Embedded Characteristics
    After fabrication many applications could
    share commodity economics for the
    production of a single IC and the same IC
    could be used to solve different problems
    at different points in time.
    3. Lower System Cost
    By eliminating the ASIC design lower
    system cost on a low-volume product is
    achieved. For higher-volume products, the
    production cost of fixed hardware is
    actually very much lower.

    History
    The final step in the development process,
    starting in the 1980s and continuing
    through the present, was "very large-scale
    integration" (VLSI). The development
    started with hundreds of thousands of
    transistors in the early 1980s, and
    continues
    beyond
    several
    billion
    transistors as of 2007.
    There was no single breakthrough that
    allowed this increase in complexity,
    though
    many
    factors
    helped.
    Manufacturing moved to smaller rules and

    cleaner fabs, allowing them to produce


    chips with more transistors with adequate
    yield, as summarized by the International
    Technology Roadmap for Semiconductors
    (ITRS). Design tools improved enough to
    make it practical to finish these designs in
    a reasonable time. The more energy
    efficient CMOS replaced NMOS and
    PMOS, avoiding a prohibitive increase in
    power consumption.
    In 1986 the first one megabit RAM chips
    were introduced, which contained more
    than
    one
    million
    transistors.
    Microprocessor chips passed the million
    transistor mark in 1989 and the billion
    transistor mark in 2005[9]. The trend
    continues largely unabated, with chips
    introduced in 2007 containing tens of
    billions of memory transistor VLSI began
    in the 1970s when complex semiconductor
    and communication technologies were
    being
    developed.
    The first "generation" of computers relied
    on vacuum tubes. Then came discrete
    semiconductor devices, followed by
    integrated circuits. The first Small-Scale
    Integration (SSI) ICs had small numbers of
    devices on a single chip diodes,
    transistors, resistors and capacitors (no
    inductors though), making it possible to
    fabricate one or more logic gates on a
    single device. The fourth generation
    consisted of Large-Scale Integration (LSI),
    i.e. systems with at least a thousand logic
    gates. The natural successor to LSI was
    VLSI (many tens of thousands of gates on
    a single chip). Current technology has
    moved far past this mark and today's
    microprocessors have many millions of
    gates and hundreds of millions of
    individual
    transistors.
    As
    of
    mid-2004,
    billion-transistor
    processors are not yet economically
    feasible for most uses, but they are
    achievable in laboratory settings, and they
    are clearly on the horizon as
    semiconductor fabrication moves from the

    current generation of 90 nanometer (90


    nm) processes to the next 65 nm and 45
    nm
    generations.

    Fabrication process sequence


    1.Silicon manifacture
    2.Wafer processing
    3.Lithography
    4.Oxide growth and removal
    5.Diffusion and ion implantation
    6.Annealing
    7.Silicon deposition
    8.Metallization
    9.Testing
    10.Assembly and packaging
    1. Silicon manufacture
    Pure silicon is melted in a pot (1400 C)
    and a small seed containing the desired
    crystal orientation is inserted into molten
    silicon and slowly(1mm/minute) pulle out.

    2. Wafer processing

    layers and then is removed.

    The silicon crystal (in some cases also


    containing doping) is manufactured as a
    cylinder (ingot) with a diameter of
    8-12 inches(1=2.54cm).
    This cylinder is carefully sawed into
    thin(0.50-0.75 mm thick) disks called
    wafers, which are later polished and
    marked for crystal orientation.

    4.Oxide growth and removal

    3.Lithography
    Lithography: process used to transfer
    patterns to each layer of the IC
    Lithography sequence steps:
    Designer:Drawing the layer patterns on
    a layout editor
    Silicon Foundry:Masks generation from
    the layer patterns in the design data base
    Printing: transfer the mask pattern to the
    wafer surface
    Process the wafer to physically pattern
    each layer of the IC.
    (a).Photo resist application:
    the surface to be patterned is
    spin-coated with a light-sensitive
    organic polymer called photoresist
    (b)Printing (exposure):
    the mask pattern is developed on the
    photoresist, with UV light exposure

    Oxide can be grownfrom silicon through


    heating in an oxidizing atmosphere
    Gate oxide, device isolation
    Oxidation consumes silicon
    SiO2is depositedon materials other than
    silicon
    through reaction between gaseous silicon
    compounds and oxidizers
    Insulation between different layers of
    metallization
    Once the desired shape is patterned with
    photoresist, the etching process allows
    unprotected materials to be removed
    Wet etching: uses chemicals
    Dry or plasma etching: uses ionized gases
    5 .Diffusion and ion implantation
    Doping materials are added to
    Change the electrical characteristics
    of silicon locally through:
    Diffusion: dopants deposited on silicon
    move through the lattice by thermal
    diffusion (high temperature process)
    Wells
    Ion implantation: highly energized donor
    or acceptor atoms impinge on the surface
    and travel below it
    The patterned SiO2serves as an
    implantation mask
    Source and Drain regions
    6. Annealing

    depending on the type of


    photoresist(negative or positive), the
    exposed or unexposed parts become
    resistant to certain types of solvents
    (c)Development:
    the soluble photo resistis chemically
    removed
    The developed photo resistacts as a mask
    for patterning of underlying

    Thermal annealing is a high temperature


    process which:
    allows doping impurities to diffuse further
    into the bulk
    repairs lattice damage caused by the
    collisions with doping ions

    7.Silicon deposition
    Films of silicon can be added on the
    surface of a wafer
    Epitaxy: growthof a single-crystal
    semiconductor film on a crystalline
    substate
    Polysilicon: polycrystalline film with a
    granular structure obtained through
    depositionof silicon on an amorphous
    material
    MOSFET gates

    8.Metallization
    Metallization: deposition of metal layers
    by evaporation
    interconnections
    9.Testing
    Test that chip operates
    Design errors
    Manufacturing errors
    A single dust particle or wafer defect kills
    a die
    Yields from 90% to < 10%
    Depends on die size, maturity of process
    Test each part before shipping to customer
    10.Assembly and packaging
    Tapeout final layout
    Fabrication
    6, 8, 12 wafers
    Optimized for throughput, not latency (10
    weeks!)
    Cut into individual dice
    Packaging
    Bond gold wires from die I/O pads to
    package

    world. So if the function is constructed


    with many smaller ICs connected together,
    then there are many connections, and the
    reliability is lower. The vlsi has fewer
    connections, and higher reliability

    Limitations
    Placement Issues

    Advantages
    Less power
    because each of the devices consumes only
    a tiny amount of power. In a switching
    circuit most of the power is consumed
    switching the charge on the capacitors that
    connect the switches to each other. In a
    large IC the components are so small and
    close together that that capacitance is
    much smaller, and thus less power.
    Less testing.
    If you built the same circuit out of discrete
    ICs and other components, each IC has to
    be tested (before you use it) for the many
    different ways it could be used in different
    applications. for 10000 ICs this is a lot of
    testing. In a VLSI the components are
    dedicated to a single use. Further, most are
    located in the middle of the VLSI and
    there is no access to them for testing. All
    you can test is the function the entire
    circuit
    was
    designed
    for.
    Reliability.
    Over time, we have found that the
    reliability of an IC is a function of how
    many connections it has to the outside

    In order to reconfigure a new hardware, it


    requires having ample space to place the
    new hardware. The component placement
    issue becomes complex if the component
    needs to be placed near special resources
    like built- in memory, I/O pins or DLLs on
    the FPGA.

    Routing Issues
    Existing components has to be connected
    to the components newly reconfigured.
    The ports must be available to interface
    new components. The same ports must
    have also been used under the
    old configuration. To accomplish this
    orientation of the components should be in
    a workable fashion.
    Timing Issues
    Newly configured hardware must meet the
    timing requirement for the efficient
    operation of the circuit. Longer wires
    between components may affect the
    timing. Optimal speed should be attainable
    after dynamically reconfiguring the device.
    Over timing or under timing the new
    added design may yield erroneous result.
    Consistency Issues
    Static or dynamic reconfiguration of the
    device should not degrade computational

    consistency of the design. This issue


    becomes critical when the FPGA is
    partially reconfigured and interfaced with
    existing design. Adding new components
    to the device by reconfigurable fabric
    should not erase or alter the existing
    design in the device. (Or memory). There
    should be some safe methods to store the
    bit stream to the memory.
    Development Tools
    Commercial development tools for
    dynamic reconfigurable computing are still
    under development stage. The lack of
    commercially available tools for the
    specification to implementation stages of
    the digital design is still a bottleneck. The
    available tools require enormous human
    intervention to implement the complete
    system

    Conclusion
    The demand for low power VLSI digital
    circuits in the growing area of
    portable communications and computing
    systems will continue to increase in
    the future. Cost and life cycle of these
    products will depend not only on low
    power synthesis techniques but also on
    new DFT methods targeting power
    minimization during test application. This
    is because the traditional DFT
    methods are not suitable for testing low
    power VLSI circuits since they reduce
    the reliability and manufacturing yield.

    References
    en.wikipedia.org/wiki/VLSI_Technology
    www.ieee.org
    www.epfl.ch
    Principles of CMOS VLSI Design
    Neil
    H.E.Weste
    Kamran Eshraghian

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