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    H9014 Tranzistor - Datasheet

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    msicoie1851
    This document provides specifications for the H9014 pre-amplifier transistor made by Shantou Huashan Electronic Devices Co.,Ltd. It lists absolute maximum ratings including storage temperature, junction temperature, collector dissipation, and breakdown voltages. Electrical characteristics include cut-off currents, current gain, saturation voltages, breakdown voltages, output capacitance, and current gain-bandwidth product. Current gain is classified from 60-150 to 400-800.

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    © All Rights Reserved
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    H9014 Tranzistor - Datasheet

    Uploaded by

    msicoie1851
    159 views2 pages
    This document provides specifications for the H9014 pre-amplifier transistor made by Shantou Huashan Electronic Devices Co.,Ltd. It lists absolute maximum ratings including storage temperature, junction temperature, collector dissipation, and breakdown voltages. Electrical characteristics include cut-off currents, current gain, saturation voltages, breakdown voltages, output capacitance, and current gain-bandwidth product. Current gain is classified from 60-150 to 400-800.

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    H9014 Transistor - Datasheet

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    This document provides specifications for the H9014 pre-amplifier transistor made by Shantou Huashan Electronic Devices Co.,Ltd. It lists absolute maximum ratings including storage temperature, junction temperature, collector dissipation, and breakdown voltages. Electrical characteristics include cut-off currents, current gain, saturation voltages, breakdown voltages, output capacitance, and current gain-bandwidth product. Current gain is classified from 60-150 to 400-800.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    159 views2 pages

    H9014 Tranzistor - Datasheet

    Uploaded by

    msicoie1851
    This document provides specifications for the H9014 pre-amplifier transistor made by Shantou Huashan Electronic Devices Co.,Ltd. It lists absolute maximum ratings including storage temperature, junction temperature, collector dissipation, and breakdown voltages. Electrical characteristics include cut-off currents, current gain, saturation voltages, breakdown voltages, output capacitance, and current gain-bandwidth product. Current gain is classified from 60-150 to 400-800.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    N P N S I L I C O N T RAN S I S T O R

    Shantou Huashan Electronic Devices Co.,Ltd.


    H9014
    PRE-AMPLIFIERLOW LEVEL & LOW NOISE

    ABSOLUTE MAXIMUM RATINGSTa=25 TO-92

    T stg Storage Temperature -55~150

    T j Junction Temperature150

    PCCollector Dissipation450mW
    1EmitterE
    VCBOCollector-Base Voltage50V 2BaseB
    3CollectorC
    VCEOCollector-Emitter Voltage45V

    V EB O Emitter-Base Voltage5V

    I C Collector Current100mA

    ELECTRICAL CHARACTERISTICSTa=25
    Symbol Characteristics Min Typ Max Unit Test Conditions
    ICBO Collector Cut-off Current 0.05 A VCB=30V, IE=0
    IEBO Emitter Cut-off Current 0.05 A VEB=5V, IC=0
    HFE(1) DC Current Gain 60 800 VCE=5V, IC=1mA
    VCE(sat) Collector- Emitter Saturation Voltage 0.3 V IC=100mA, IB=5mA
    VBE(sat) Base-Emitter Saturation Voltage 1.0 V IC=100mA, IB=5mA
    BVCBO Collector-Base Breakdown Voltage 50 V IC=100A, IE=0
    BVCEO Collector-Emitter Breakdown Voltage 45 V IC=1mA, IB=0
    BVEBO Emitter-Base Breakdown Voltage 5 V IE=100AIC=0
    Cob Output Capacitance 2.2 3.5 pF VCB=10V, IE=0f=1MHz
    fT Current Gain-Bandwidth Product 150 270 MHz VCE=5V, IC=10mA

    hFE Classification

    A B C D

    60150 100300 200600 400800


    Shantou Huashan Electronic Devices Co.,Ltd.
    H9014

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