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    Semiconductors: EEE F111 Dr. Ruma Ghosh

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    1. Semiconductors have properties between conductors and insulators due to their band structure which allows electron and hole charge carriers. 2. The position of the Fermi level determines whether a material is metallic, semiconducting, or insulating. In semiconductors, the Fermi level lies within the band gap. 3. Semiconductors have electrical conductivity that increases with temperature, unlike insulators whose conductivity does not change or metals whose conductivity decreases. Majority and minority charge carriers determine conductivity.

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    Semiconductors: EEE F111 Dr. Ruma Ghosh

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    vipul
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    1. Semiconductors have properties between conductors and insulators due to their band structure which allows electron and hole charge carriers. 2. The position of the Fermi level determines whether a material is metallic, semiconducting, or insulating. In semiconductors, the Fermi level lies within the band gap. 3. Semiconductors have electrical conductivity that increases with temperature, unlike insulators whose conductivity does not change or metals whose conductivity decreases. Majority and minority charge carriers determine conductivity.

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    LECTURE 20

    Original Title

    14-03-17-Lecture 20

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    1. Semiconductors have properties between conductors and insulators due to their band structure which allows electron and hole charge carriers. 2. The position of the Fermi level determines whether a material is metallic, semiconducting, or insulating. In semiconductors, the Fermi level lies within the band gap. 3. Semiconductors have electrical conductivity that increases with temperature, unlike insulators whose conductivity does not change or metals whose conductivity decreases. Majority and minority charge carriers determine conductivity.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views16 pages

    Semiconductors: EEE F111 Dr. Ruma Ghosh

    Uploaded by

    vipul
    1. Semiconductors have properties between conductors and insulators due to their band structure which allows electron and hole charge carriers. 2. The position of the Fermi level determines whether a material is metallic, semiconducting, or insulating. In semiconductors, the Fermi level lies within the band gap. 3. Semiconductors have electrical conductivity that increases with temperature, unlike insulators whose conductivity does not change or metals whose conductivity decreases. Majority and minority charge carriers determine conductivity.

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    SEMICONDUCTORS

    EEE F111
    DR. RUMA GHOSH
    BAND THEORY

    CB
    VB

    VB
    Metal Metal

    CB
    CB

    >3 eV
    ~2 eV

    VB
    VB

    Semiconductor Insulator
    FERMI LEVEL
    It is an imaginary energy band above which
    probability of finding electrons is 0 is 0K
    CB

    The energy level having a probability of 50% for


    being occupied at any given time, at equilibrium
    EF conditions

    With increase in temperature, the


    VB

    aforementioned probabilities change

    Position varies with doping of semiconductors


    EFFECT OF TEMPERATURE ON
    ELECTRICAL CONDUCTIVITY
    Insulators: No change

    Metals: Decrease

    Semiconductors: Increase

    = [ + ]
    WHY SEMICONDUCTORS
    ARE DIFFERENT?
    Presence of two different charge carriers electrons and holes

    e-h generation Recombination


    SILICON AND
    GERMANIUM

    Parameters Si Ge
    Band Gap 1.1 eV 0.7 eV
    Electron Concentration(300K) 1010 cm-3 1013 cm-3
    Forward Voltage Potential 0.7 eV 0.3 eV
    Resistivity 2.3 m 0.45 m
    Temperature Sustainability >300C ~80C
    INTRINSIC AND
    EXTRINSIC
    SEMICONDUCTORS
    Intrinsic semiconductor

    n p ni

    EC EV
    EF
    2

    Fermi level lies at centre of the forbidden gap


    Extrinsic semiconductor

    p-type
    n-type

    NC NV
    EF EC K BT log EF EV K BT log
    ND NA
    MAJORITY AND
    MINORITY CARRIERS
    = Mass action law

    For a doped semiconductor to be electrically neutral,


    + = +

    Case 1: For n-type semiconductor, NA = 0,



    = ,

    Case 2: For p-type semiconductor, ND = 0,

    = ,

    EXERCISE
    At 300K, the intrinsic concentration of Si is 1.5 X 1016 m-3. The semiconductor is
    doped with 2 parts per 108 host atoms using Arsenic. Given that the
    concentrations of Si-atoms is 5X1028 m-3 , find out the donor atom
    concentrations and the minority charge carrier concentrations


    Sol. Donor concentration, = 5 1028
    = /

    2 2.25 1032
    = = 21
    = . /
    10
    CONDUCTIVITY OF
    SEMICONDUCTOR

    = +

    = +

    HOME ASSIGNMENT

    Q. Consider the semiconductor described in Exercise 1. Given that the electron


    mobility is 0.13m2/V-S and hole mobility is 0.05m2/V-S, calculate the
    conductivity of the doped semiconductor

    20.8 /m
    CHARGE TRANSPORT
    Drift Current

    =

    = = =
    /


    = = =

    =

    = ( + )
    Diffusion Current


    () =

    =


    =

    P-N JUNCTION
    Unbiased p-n
    junction

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