STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S
STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S
STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S
STB20NK50Z - STB20NK50Z-S
N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247
Zener-Protected SuperMESH™ MOSFET
TO-220 TO-247
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTEDGATE CHARGE
MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
3
■ VERY GOOD MANUFACTURING 12
3
1
REPEATIBILITY
D2PAK
I2SPAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip- INTERNAL SCHEMATIC DIAGRAM
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
THERMAL DATA
TO-220/D2PAK TO-247
Rthj-case Thermal Resistance Junction-case Max 0.66 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 17 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 850 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
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STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID = 8.5 A 13 S
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2600 pF
Coss Output Capacitance 328 pF
Crss Reverse Transfer 72 pF
Capacitance
Coss eq. (3) Equivalent Output VGS = 0V, VDS = 0V to 640V 187 pF
Capacitance
SWITCHING ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 250 V, ID = 8.5 A 28 ns
tr Rise Time RG = 4.7Ω , VGS = 10 V 20 ns
td(off) Turn-off Delay Time (Resistive Load see, Figure 3) 70 ns
tf Fall Time 15 ns
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STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
Safe Operating Area for TO-220 / D2PAK/ I2SPAK Thermal Impedance for TO-220 / D2PAK/I2SPAK
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STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
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STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load
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STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
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mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
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STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03
F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13
G 10.90 0.43
H 15.45 15.75 0.60 0.62
L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21
M 2 3 0.07 0.11
V 5º 5º
V2 60º 60º
Dia 3.55 3.65 0.14 0.143
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STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.018 0.024
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.394 0.409
G 4.88 5.28 0.192 0.208
L 16.7 17.5 0.657 0.689
L2 1.27 1.4 0.05 0.055
L3 13.82 14.42 0.544 0.568
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STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
* on sales type
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STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
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