STP10NK80Z - STP10NK80ZFP

STW10NK80Z
N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247
Zener-Protected SuperMESH™Power MOSFET

TYPE VDSS RDS(on) ID Pw

STP10NK80Z 800 V < 0.90 Ω 9A 160 W
STP10NK80ZFP 800 V < 0.90 Ω 9A 40 W
STW10NK80Z 800 V < 0.90 Ω 9A 160 W
3
■ TYPICAL RDS(on) = 0.78 Ω 1
2

■ EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP

■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING 3
2
REPEATIBILITY 1

TO-247

DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES

■ DC-AC CONVERTERS FOR WELDING, UPS

AND MOTOR DRIVE

ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP10NK80Z P10NK80Z TO-220 TUBE
STP10NK80ZFP P10NK80ZFP TO-220FP TUBE
STW10NK80Z W10NK80Z TO-247 TUBE

February 2003 1/11

STP10NK80Z - STP10NK80ZFP - STW10NK80Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STP10NK80Z STP10NK80ZFP STW10NK80Z
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 800 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 9 9 (*) 9 A
ID Drain Current (continuous) at TC = 100°C 6 6 (*) 6 A
IDM (
) Drain Current (pulsed) 36 36 (*) 36 A
PTOT Total Dissipation at TC = 25°C 160 40 160 W
Derating Factor 1.28 0.32 1.28 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4 KV
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 - V
Tj Operating Junction Temperature -55 to 150 °C
Tstg Storage Temperature -55 to 150 °C
(
) Pulse width limited by safe operating area
(1) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed

THERMAL DATA
TO-220 TO-220FP TO-247
Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 0.78 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 9 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 290 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO Gate-Source Breakdown Igs=± 1mA (Open Drain) 30 V
Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

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 STP10NK80Z - STP10NK80ZFP - STW10NK80Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 1 mA, VGS = 0 800 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA
IGSS Gate-body Leakage VGS = ± 20V ±10 µA
Current (VDS = 0)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100µA 3 3.75 4.5 V
RDS(on) Static Drain-source On VGS = 10V, ID = 4.5 A 0.78 0.9 Ω
Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID = 4.5 A 9.6 S
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2180 pF
Coss Output Capacitance 205 pF
Crss Reverse Transfer 38 pF
Capacitance
Coss eq. (3) Equivalent Output VGS = 0V, VDS = 0V to 640V 105 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 400 V, ID = 4.5 A 30 ns
tr Rise Time RG = 4.7Ω VGS = 10 V 20 ns
(Resistive Load see, Figure 3)
Qg Total Gate Charge VDD = 640V, ID = 9 A, 72 101 nC
Qgs Gate-Source Charge VGS = 10V 12.5 nC
Qgd Gate-Drain Charge 37 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 400 V, ID = 4.5 A 65 ns
tf Fall Time RG = 4.7Ω VGS = 10 V 17 ns
(Resistive Load see, Figure 3)
tr(Voff) Off-voltage Rise Time VDD = 640V, ID = 9 A, 13 ns
tf Fall Time RG = 4.7Ω, VGS = 10V 10 ns
tc Cross-over Time (Inductive Load see, Figure 5) 25 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 9 A
ISDM (2) Source-drain Current (pulsed) 36 A
VSD (1) Forward On Voltage ISD = 9 A, VGS = 0 1.6 V
trr Reverse Recovery Time ISD = 9 A, di/dt = 100A/µs 645 ns
Qrr Reverse Recovery Charge VDD = 45V, Tj = 150°C 6.4 µC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 20 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.

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STP10NK80Z - STP10NK80ZFP - STW10NK80Z

Safe Operating Area For TO-220 Thermal Impedance For TO-220

Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP

Safe Operating Area For TO-247 Thermal Impedance For TO-247

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Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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STP10NK80Z - STP10NK80ZFP - STW10NK80Z

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature

Maximum Avalanche Energy vs Temperature

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 STP10NK80Z - STP10NK80ZFP - STW10NK80Z

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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STP10NK80Z - STP10NK80ZFP - STW10NK80Z

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151

E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7
L6 L4
P011C

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 STP10NK80Z - STP10NK80ZFP - STW10NK80Z

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

¯
F

G1

G
H

F2

1 2 3
L5
L2 L4

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STP10NK80Z - STP10NK80ZFP - STW10NK80Z

TO-247 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03
F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13
G 10.90 0.43
H 15.45 15.75 0.60 0.62
L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21
M 2 3 0.07 0.11
V 5º 5º
V2 60º 60º
Dia 3.55 3.65 0.14 0.143

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 STP10NK80Z - STP10NK80ZFP - STW10NK80Z

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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
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previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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