V +5V +5V +5V: GS Off 10 GS Off 3

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VDD +5V +5V +5V

D D D
G Roff Ron
+ S
VGS S S
-

ESTADO OFF ESTADO ON


VGS=0V, R OFF=1010 ohm VGS=5V, R OFF=103 ohm
VDD = +5V VDD = +5V VDD = +5V

D Q2 ON Q2 ON
Q2 RON = 100 Kohm RON = 100 Kohm
G S

VSAL
VSAL = 0,05V (0) VSAL = 5V (1)

D
Q1
G Q1 ON Q1 OFF
S
RON = 1 Kohm RON = 107 Kohm
VENT

VEN = +5V (1) VEN = 0V (0)

INVERSOR N-MOS
VDD = +5V VDD = +5V

D D
Q3 Q3
G S G S

SAL = (AB)'
SAL = (A+B)'
D
Q1
G
A S

D D
Q1 Q2
G S S G

D
A B
Q2
G
B S

NAND N-MOS NOR N-MOS


FLIA MOS
CARACTERISTICAS

• RETARDOS
• MARGEN DE RUIDO
• FAN OUT
• CONSUMO
• COMPLEJIDAD
• SENSIBILIDAD ESTATICA
+VDD FLIA CMOS
S INVERSOR BASICO
G
P Q1

D
VSAL = VENT
VENT
D

G
N Q2

S
+VDD

S S

A G G
P P
D D
VSAL = A B

G
N Q2

FLIA CMOS
D

B G
N Q2 COMPUERTA NAND
S
FLIA TTL
Niveles Lógicos

FLIA CMOS
Niveles Lógicos
Inmunidad al ruido
Potencia
Carga y fan-out

Fan-out
depende de la
frecuencia de
operación
PARAMETROS 74 74S 74LS 74AS 74ALS 4000B 74HCT 74AC

Retardo de Propagación (nS) 9 3 9.5 1.7 4 50 8 4.7

Disipación de Potencia (mW) 10 20 2 8 1.2

Estática 0.001 0.0025 0.005

Dinámica (100 KHZ) 0.1 0.17 0.08

Producto Veloc-Pot. (pJ) 90 60 19 13.6 4.8 5 1.36 0.376

Frecuencia Max. (MHz) 35 125 45 200 70 12 40 100

Fan Out (para la misma serie) 10 20 20 40 20 50 50 50

VOH (min) 2.4 2.7 2.7 2.5 2.5 4.95 4.9 4.9

VOL (max) 0.4 0.5 0.5 0.5 0.4 0.05 0.1 0.1

VIH (min) 2.0 2.0 2.0 2.0 2.0 3.5 2.0 3.5

VIL (max) 0.8 0.8 0.8 0.8 0.8 1.5 0.8 1.5

VN(peor caso) 0.4 0.3 0.3 0.3 0.40 1.45 0.7 1.4

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