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    SBP 13005 D

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    Abdulraouf Defnany
    This document provides information about a high voltage fast-switching NPN power transistor. It details the transistor's features, maximum ratings, thermal characteristics, electrical characteristics, package dimensions, and includes figures illustrating current gain, saturation voltage, power derating, safe operation area, and collector output capacitance.

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    SBP 13005 D

    Uploaded by

    Abdulraouf Defnany
    252 views4 pages
    This document provides information about a high voltage fast-switching NPN power transistor. It details the transistor's features, maximum ratings, thermal characteristics, electrical characteristics, package dimensions, and includes figures illustrating current gain, saturation voltage, power derating, safe operation area, and collector output capacitance.

    Original Description:

    13005 Datasheet

    Original Title

    sbp13005d

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    This document provides information about a high voltage fast-switching NPN power transistor. It details the transistor's features, maximum ratings, thermal characteristics, electrical characteristics, package dimensions, and includes figures illustrating current gain, saturation voltage, power derating, safe operation area, and collector output capacitance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    252 views4 pages

    SBP 13005 D

    Uploaded by

    Abdulraouf Defnany
    This document provides information about a high voltage fast-switching NPN power transistor. It details the transistor's features, maximum ratings, thermal characteristics, electrical characteristics, package dimensions, and includes figures illustrating current gain, saturation voltage, power derating, safe operation area, and collector output capacitance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    SBP13005D

    High Voltage Fast-Switching NPN Power Transistor

    Features
    ◆ Very High Switching Speed
    ◆ Minimum Lot-to-Lot hFE Variation
    ◆ Wide Reverse Bias SOA
    ◆ Built-in freewheeling diode

    General Description
    This Device is designed for high voltage, High speed
    switching characteristics required such as lighting system,
    switching mode power supply.

    Absolute Maximum Ratings


    Symbol Paramet
    Para er
    mete estt Condi
    Tes Condittions Value Units
    VCES Collector-Emitter Voltage VBE = 0 700 V

    VCEO Collector-Emitter Voltage IB = 0 400 V


    VEBO Emitter-Base Voltage IC = 0 9.0 V
    IC Collector Current 4.0 A
    ICP Collector pulse Current 8.0 A
    IB Base Current 2.0 A
    IBM Base Peak Current tP = 5ms 4.0 A
    PC Total Dissipation at TC = 25℃ 75 W
    TJ Operation Junction Temperature - 40 ~ 150 ℃

    TSTG Storage Temperature - 40 ~ 150 ℃

    Thermal Chara
    Characcteri
    terisstics
    Symbol Paramet
    Para er
    mete Value Units

    RθJC Thermal Resistance Junction to Case 1.67 ℃/W

    RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W

    Jan 2009. Rev. 0


    Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
    SBP13005D
    Electrical Characteristics (TC=25℃ unless otherwise noted)
    Value
    Symbol Paramet
    Para er
    mete Tes
    estt Condi
    Condittions Units
    Min Ty p Max
    Colletor Cut-off Current VCE = 700V - - 1.0
    ICEV mA
    ( VBE = -1.5V ) VCE = 700V ,TC = 100℃ - - 5.0

    VCEO(SUS) Collector-Emitter Sustaining Voltage IB = 0, IC = 10mA 400 - - V

    IC =1.0A, IB = 0.2A 0.5


    VCE(sat) Collector-Emitter Saturation Voltage IC = 2.0A, IB = 0.5A - - 0.6 V

    IC = 4.0A, IB = 1.0A 1.0

    IC =1.0A, IB = 0.2A 1.2


    VBE(sat) Base-Emitter Saturation Voltage - - V
    IC = 2.0A, IB = 0.5A 1.6

    IC = 1.0A, VCE = 5V 10 40
    hFE DC Current Gain
    IC = 2.0A, VCE = 5V 10 30

    IC = 2.0A, VCC = 125V


    ts Storage Time 3.6
    - - ㎲
    tf Fall Time IB1 = 0.4A, IB2 = -0.4A 1.6
    TP = 25us
    fT Current Gain Bandwidth Product IC=0.5A ,VCE=10V 4 - - MHz

    VF Diode Forward Voltage IF=2A - - 2.5 V

    COB Output Capacitance IC=0.5A ,VCE=10V - 6.5 pF

    Note:
    Pulse Test : Pulse width 300, Duty cycle 2%

    2/4
    Steady, keep you advance
    SBP13005D

    Fig. 1 DC Curr ent Gain


    rrent Satturation Vol
    Fig. 2 Sa Volttage

    Fig. 3 Power De
    Pow Derrating Fig. 4 Safe Oper
    Oper ation Area
    era

    Fig. 5 Collect output capacitance


    cap

    3/4
    Steady, keep you advance
    SBP13005D
    TO-220 Packa
    Packagge Dimension

    Unit:mm

    4/4
    Steady, keep you advance

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