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    Expt 7 BJT Biasing Circuits

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    samarth
    The document describes an experiment to study the operation of BJT biasing circuits using fixed bias and voltage divider bias configurations. The objectives are to determine the quiescent operating conditions of each configuration and compare the theoretical and measured values. The procedures involve constructing each circuit using different transistors, measuring voltages and currents, calculating key parameters like bias currents and beta, and recording the results in tables to analyze any differences between calculated and measured values.

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    © All Rights Reserved
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    Expt 7 BJT Biasing Circuits

    Uploaded by

    samarth
    2K views6 pages
    The document describes an experiment to study the operation of BJT biasing circuits using fixed bias and voltage divider bias configurations. The objectives are to determine the quiescent operating conditions of each configuration and compare the theoretical and measured values. The procedures involve constructing each circuit using different transistors, measuring voltages and currents, calculating key parameters like bias currents and beta, and recording the results in tables to analyze any differences between calculated and measured values.

    Original Description:

    Expt 7 Transistor Biasing SE ETC Sem III RC 2016-17 2019

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    The document describes an experiment to study the operation of BJT biasing circuits using fixed bias and voltage divider bias configurations. The objectives are to determine the quiescent operating conditions of each configuration and compare the theoretical and measured values. The procedures involve constructing each circuit using different transistors, measuring voltages and currents, calculating key parameters like bias currents and beta, and recording the results in tables to analyze any differences between calculated and measured values.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    2K views6 pages

    Expt 7 BJT Biasing Circuits

    Uploaded by

    samarth
    The document describes an experiment to study the operation of BJT biasing circuits using fixed bias and voltage divider bias configurations. The objectives are to determine the quiescent operating conditions of each configuration and compare the theoretical and measured values. The procedures involve constructing each circuit using different transistors, measuring voltages and currents, calculating key parameters like bias currents and beta, and recording the results in tables to analyze any differences between calculated and measured values.

    Copyright:

    © All Rights Reserved
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    of 6

    GOA COLLEGE OF ENGINEERING

    Expt No: 7 Date:

    BJT BIASING CIRCUITS (Fixed Bias and Voltage Divider Bias)

    Aim : To study the operation of BJT biasing circuits.

    Objective: To determine the quiescent operating conditions of the fixed- and voltage-
    divider-bias BJT configurations.

    Components:
    Sr Component Specification Quantity
    No

    1 Transistors 2N3904 / 2N4401 / 1


    CL 100 / BC 107
    2. Resistors 680 , 1.8 k, 2.7 k, 1 each (As per
    6.8 k, 33 k, 1 M design)

    3. DC Power Supply 0-30 V 1

    4. Digital Multimeter - 2/3


    (DMM)
    (Students Note: The specifications may differ according to the circuit design and operation)

    Operation:

    Transistor Biasing is the process of setting a transistors DC operating voltage or


    current conditions to the correct level so that any AC input signal can be amplified
    correctly by the transistor. A transistor is biased in order to make the emitter base
    junction forward biased and collector base junction reverse biased, so that it maintains in
    active region, to work as an amplifier.

    A biasing is required to activate the transistor and prevents it to either to


    saturation mode or cut-off mode. The two most common forms of bipolar transistor
    biasing are: Beta Dependent and Beta Independent. Transistor bias voltages are largely
    dependent on transistor beta, ( β ) so the biasing set up for one transistor may not
    necessarily be the same for another transistor as their beta values may be different. The
    five common biasing circuits used with class-A bipolar transistor amplifiers are:

     Fixed bias.
     Collector-to-base bias.
     Fixed bias with emitter resistor.
     Voltage divider bias or potential divider.
     Emitter bias.

    pg. 1 Lab. Write-Up for EDC – 1 (RC 2016-17) Compiled by Dr. Samarth Borker, Dept. of E&TC, GEC Farmagudi Goa. 2019
    GOA COLLEGE OF ENGINEERING
    Circuit Diagram:

    Fig. 7.1 Fixed Bias Circuit

    Fig 7.2 Voltage Divider Bias Circuit

    Procedure:

    Part A : Fixed-Bias Configuration

    1. Verify all resistor values (RB and RC) from circuit in Fig. 7.1 using color code.
    Record them.
    2. Construct circuit as of Fig. 7.1 using 2N3904 transistor and set VCC = 20 V.
    3. Measure the voltages VBE and VRC. Record them.
    4. Calculate the resulting base current, IB and collector current, IC. Using the values
    obtained, find β.
    pg. 2 Lab. Write-Up for EDC – 1 (RC 2016-17) Compiled by Dr. Samarth Borker, Dept. of E&TC, GEC Farmagudi Goa. 2019
    GOA COLLEGE OF ENGINEERING
    5. By using the values obtained in Step 4, calculate the values of VB, VC, VE and VCE.
    6. Measure VB, VC, VE and VCE.
    7. How do the measured values (Step 6) compare to the calculated values (Step 5)?
    8. Simply remove the 2N3904 transistor and replace with 2N4401 transistor.
    9. Then, measure the voltages VBE and VRC. Using the same equations, calculate the
    values of IB and IC. From the values obtained, determine the β value for 2N4401
    transistor.
    10.Compile all the data needed for both transistors in Table 7.1.

    Part B : Voltage-Divider-Bias Configuration

    1. Verify all resistor values (R1, R2, RE and RC) from circuit in Fig. 7.2 using
    color codes. Record them.
    2. Using the β determined for 2N3904 transistor in Part A, calculate the
    theoretical values of VB, VE, IE, IC, VC, VCE and IB for the network shown in
    Fig. 7.2. Record them in Table 7.2.
    3. Construct the network of Fig. 7.2 and measure VB, VE, VC and VCE. Record
    them in Table 7.2.
    4. Measure the voltages VR1 and VR2. Calculate the currents IE and IC and the
    currents I1 and I2. Using Kirchoff’s current law, calculate the current IB.
    Record IE, IC and IB values in Table 7.2.
    5. How do the calculated and measured values of Table 7.2 differ?
    6. Simply remove the 2N3904 transistor and replace with 2N4401 transistor.
    7. Then, measure the voltages VCE, also, measure the voltages VR1 and VR2
    (take readings to the hundredth or thousandth place). Calculate the current IC
    and the currents I1 and I2. Using Kirchoff’s current law, calculate the current
    IB.
    8. Complete Table 7.3 with the values of VCE, IC, IB and β.

    Results and Calculations:

    Part A

    1. RB (measured) = ______________, RC (measured) = ______________


    2. VBE (measured) = ______________, VRC (measured) = ______________
    3. IB = __________________, IC = _________________,
    4. β = _____________

    VRB VCC  VBE


    IB   
    RB RB

    pg. 3 Lab. Write-Up for EDC – 1 (RC 2016-17) Compiled by Dr. Samarth Borker, Dept. of E&TC, GEC Farmagudi Goa. 2019
    GOA COLLEGE OF ENGINEERING
    VRC IC
    IC    
    RC IB

    5. VB (calculated) = _____________, VC (calculated) = _______________

    VE (calculated) = _____________, VCE (calculated) = ______________

    6. VB (measured) = _____________, VC (measured) = _______________

    VE (measured) = _____________, VCE (measured) = ______________

    7. Comparison of results from Step 5 & Step 6 :

    8. VBE (measured) = ______________, VRC (measured) = ______________

    9. IB = __________________, IC = _________________, β = _____________

    VRB VCC  VBE


    IB   
    RB RB

    VRC IC
    IC    
    RC IB

    10.

    Trans.
    VCE (V) IC (mA) IB (μA) β
    Type
    2N3904
    2N4401

    Table 7.1

    Part B

    1. R1 (measured) = ____________, R2 (measured) = ___________,

    RC (measured) = ___________, RE (measured) = ___________

    2. VB (calculated) = ___________, VE (calculated) = ___________

    IE (calculated) = ___________, IC (calculated) = ___________

    3. VC (calculated) = ___________, VCE (calculated) = __________

    pg. 4 Lab. Write-Up for EDC – 1 (RC 2016-17) Compiled by Dr. Samarth Borker, Dept. of E&TC, GEC Farmagudi Goa. 2019
    GOA COLLEGE OF ENGINEERING
    IB (calculated) = ____________

    2N3904 VB(V) VE(V) VC(V) VCE(V) IE(mA) IC(mA) IB(μA)

    Calculated
    (Step 2)

    Measured
    (Step
    3&4)

    Table 7.2

    4. Show your works for calculating IE and IC (using measured values recorded in

    Table 7.3).

    I1 = _______________, I2 = ________________

    VR1
    I1  
    R1

    VR 2
    I2  
    R2

    Using KCL, IB = _______________

    (Currents calculated from measured values; considered as measured IE, IC & IB)

    5. Comparison of calculated and measured values of Table 7.3:

    Trans.
    VCE (V) IC (mA) IB (μA) β
    Type
    2N3904
    2N4401

    Table 7.3

    6. VCE (measured) = _______________

    VCC  VCE
    IC  
    RC  RE
    pg. 5 Lab. Write-Up for EDC – 1 (RC 2016-17) Compiled by Dr. Samarth Borker, Dept. of E&TC, GEC Farmagudi Goa. 2019
    GOA COLLEGE OF ENGINEERING
    I1 = _______________, I2 = ________________

    VR1
    I1  
    R1

    VR 2
    I2  
    R2
    Using KCL, IB = _______________

    7. Complete Table 7.3 using the values obtained for 2N4401 transistor.

    Precautions:

    1. While doing the experiment do not exceed the ratings of the transistor. This
    may lead to damage the transistor. Download Datasheet prior to assembly.
    2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit
    diagram.
    3. Do not switch ON the power supply unless you have checked the circuit
    connections as per the circuit diagram.
    4. Make sure while selecting the emitter, base and collector terminals of the
    transistor.
    Conclusion:

    ________________________________________________________________________
    ________________________________________________________________________
    ________________________________________________________________________
    ************************************************************************

    Viva Questions:

    1. What is a “load-line”? What is its significance? Differentiate between a.c.


    load line and d.c. load line.
    2. What is meant by Q- point?
    3. What is Biasing and why it is needed for transistor?
    4. What are the methods of transistor biasing, which type is best and why?
    5. What is thermal Runaway?

    Outcomes of this Practical Session:

    Students are able to


    1. Analyze the operation of BJT for various biasing networks.
    2. Understand the importance of setting up of operating point.
    pg. 6 Lab. Write-Up for EDC – 1 (RC 2016-17) Compiled by Dr. Samarth Borker, Dept. of E&TC, GEC Farmagudi Goa. 2019

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