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M3D054

BZV55 series
Voltage regulator diodes
Product specification 2002 Feb 28
Supersedes data of 1999 May 21
Philips Semiconductors Product specification

Voltage regulator diodes BZV55 series

FEATURES
• Total power dissipation: max. 500 mW
• Two tolerance series: ±2%, and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
max. 40 W. k a
columns

APPLICATIONS
• Low voltage stabilizers or voltage references.
MAM215

DESCRIPTION
Low-power voltage regulator diodes in small hermetically
sealed glass SOD80C SMD packages. The diodes are
available in the normalized E24 ±2% (BZV55-B) and The cathode is indicated by a yellow band.

approx. ±5% (BZV55-C) tolerance range. The series

Fig.1 Simplified outline (SOD80C) and symbol.
consists of 37 types with nominal working voltages from
2.4 to 75 V.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IF continuous forward current − 250 mA
IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Tables 1 and 2 A
Tj = 25 °C prior to surge
Ptot total power dissipation Tamb ≤ 50 °C; note 1 − 400 mW
tie-point ≤ 50 °C; note 1 − 500 mW
PZSM non-repetitive peak reverse power tp = 100 µs; square wave; − 40 W
dissipation Tj = 25 °C prior to surge; see Fig.3
Tstg storage temperature −65 +200 °C
Tj junction temperature −65 +200 °C

Note
1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.

2002 Feb 28 2
Philips Semiconductors Product specification

Voltage regulator diodes BZV55 series

ELECTRICAL CHARACTERISTICS
Total BZV55-B and BZV55-C series
Tj = 25 °C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VF forward voltage IF = 10 mA; see Fig.4 0.9 V
IR reverse current
BZV55-B/C2V4 VR = 1 V 50 µA
BZV55-B/C2V7 VR = 1 V 20 µA
BZV55-B/C3V0 VR = 1 V 10 µA
BZV55-B/C3V3 VR = 1 V 5 µA
BZV55-B/C3V6 VR = 1 V 5 µA
BZV55-B/C3V9 VR = 1 V 3 µA
BZV55-B/C4V3 VR = 1 V 3 µA
BZV55-B/C4V7 VR = 2 V 3 µA
BZV55-B/C5V1 VR = 2 V 2 µA
BZV55-B/C5V6 VR = 2 V 1 µA
BZV55-B/C6V2 VR = 4 V 3 µA
BZV55-B/C6V8 VR = 4 V 2 µA
BZV55-B/C7V5 VR = 5 V 1 µA
BZV55-B/C8V2 VR = 5 V 700 nA
BZV55-B/C9V1 VR = 6 V 500 nA
BZV55-B/C10 VR = 7 V 200 nA
BZV55-B/C11 VR = 8 V 100 nA
BZV55-B/C12 VR = 8 V 100 nA
BZV55-B/C13 VR = 8 V 100 nA
BZV55-B/C15 to BZV55-B/C75 VR = 0.7VZnom 50 nA

2002 Feb 28 3
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2002 Feb 28 Table 1 Per type, BZV55-B/C2V4 to BZV55-B/C24

Philips Semiconductors
Tj = 25 °C unless otherwise specified.

Voltage regulator diodes

WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK
VZ (V) rdif (Ω) SZ (mV/K) Cd (pF) REVERSE CURRENT
BZV55- at IZtest = 5 mA at IZtest = 5 mA at f = 1 MHz; IZSM (A)
Bxxx (see Figs 5 and 6) VR = 0 V at tp = 100 µs; Tamb = 25 °C
Tol. approx.
Cxxx Tol. ±2% (B) at IZtest = 1 mA at IZtest = 5 mA
±5% (C)
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.
2V4 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0
2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0
3V0 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0
3V3 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0
3V6 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0
3V9 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0
4V3 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0
4V7 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0
5V1 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0
4

5V6 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0
6V2 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0
6V8 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0
7V5 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0
8V2 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0
9V1 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0
10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0
11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5
12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5
13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5
15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0

BZV55 series

Product specification
16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5
18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5
20 19.60 20.40 18.8 21.2 60 225 15 55 12.3 15.6 18.0 60 1.5
22 21.60 22.40 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60 1.25
24 23.50 24.50 22.8 25.6 60 250 25 70 15.9 19.6 22.0 55 1.25
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2002 Feb 28 Table 2 Per type, BZV55-B/C27 to BZV55-B/C75

Philips Semiconductors
Tj = 25 °C unless otherwise specified.

Voltage regulator diodes

WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK
VZ (V) rdif (Ω) SZ (mV/K) Cd (pF) REVERSE CURRENT
BZV55- at IZtest = 2 mA at IZtest = 2 mA at f = 1 MHz; IZSM (A)
Bxxx (see Figs 5 and 6) VR = 0 V at tp = 100 µs; Tamb = 25 °C
Tol. approx.
Cxxx Tol. ±2% (B) at IZtest = 0.5 mA at IZtest = 2 mA
±5% (C)
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.
27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0
30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0
33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9
36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45 0.8
39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45 0.7
43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40 0.6
47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5
51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40 0.4
56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3
5

62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3
68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25
75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2

BZV55 series

Product specification
Philips Semiconductors Product specification

Voltage regulator diodes BZV55 series

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point 300 K/W
Rth j-a thermal resistance from junction to ambient see Fig.2 and note 1 380 K/W

Note
1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.

GRAPHICAL DATA

MBG930
103
handbook, full pagewidth

δ=1
Rth j-a
(K/W) 0.75
0.50
0.33
102 0.20

0.10
0.05

0.02
0.01
10 ≤0.001

tp tp
T δ=
T

1
10−1 1 10 102 103 104 tp (ms) 105

Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.

2002 Feb 28 6
Philips Semiconductors Product specification

Voltage regulator diodes BZV55 series

MBG801 MBG781
103 300
handbook, halfpage handbook, halfpage

PZSM IF
(W) (mA)

102 200

(1)
10 100
(2)

1 0
10−1 1 duration (ms) 10 0.6 0.8 VF (V) 1.0

(1) Tj = 25 °C (prior to surge).

(2) Tj = 150 °C (prior to surge). Tj = 25 °C.

Fig.3 Maximum permissible non-repetitive peak Fig.4 Typical forward current as a function of
reverse power dissipation versus duration. forward voltage.

MBG783 MBG782
0 10
handbook, halfpage handbook, halfpage
12
SZ SZ
4V3 11
(mV/K) (mV/K)
10
9V1
−1 5
3V9 8V2
7V5
3V6 6V8
6V2
5V6
5V1
−2 3V3 0
3V0 4V7

2V4
2V7
−3 −5
0 20 40 IZ (mA) 60 0 4 8 12 16 20
IZ (mA)

BZV55-B/C2V4 to BZV55-B/C4V3. BZV55-B/C4V7 to BZV55-B/C12.

Tj = 25 to 150 °C. Tj = 25 to 150 °C.

Fig.5 Temperature coefficient as a function of Fig.6 Temperature coefficient as a function of

working current; typical values. working current; typical values.

2002 Feb 28 7
Philips Semiconductors Product specification

Voltage regulator diodes BZV55 series

PACKAGE OUTLINE

Hermetically sealed glass surface mounted package; 2 connectors SOD80C

k (1) a

L L
H

DIMENSIONS (mm are the original dimensions)

0 1 2 mm
UNIT D H L
scale
1.60 3.7
mm 0.3
1.45 3.3

Note
1. The marking band indicates the cathode.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOD80C 100H01 97-06-20

2002 Feb 28 8
Philips Semiconductors Product specification

Voltage regulator diodes BZV55 series

DATA SHEET STATUS

PRODUCT
DATA SHEET STATUS(1) DEFINITIONS
STATUS(2)
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS DISCLAIMERS
Short-form specification  The data in a short-form Life support applications  These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition  Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes  Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes, without notice, in the
Characteristics sections of the specification is not implied. products, including circuits, standard cells, and/or
Exposure to limiting values for extended periods may software, described or contained herein in order to
affect device reliability. improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
Application information  Applications that are
the use of any of these products, conveys no licence or title
described herein for any of these products are for
under any patent, copyright, or mask work right to these
illustrative purposes only. Philips Semiconductors make
products, and makes no representations or warranties that
no representation or warranty that such applications will be
these products are free from patent, copyright, or mask
suitable for the specified use without further testing or
work right infringement, unless otherwise specified.
modification.

2002 Feb 28 9
Philips Semiconductors Product specification

Voltage regulator diodes BZV55 series

NOTES

2002 Feb 28 10
Philips Semiconductors Product specification

Voltage regulator diodes BZV55 series

NOTES

2002 Feb 28 11
Philips Semiconductors – a worldwide company

Contact information

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For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

© Koninklijke Philips Electronics N.V. 2002 SCA74

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Printed in The Netherlands 613514/03/pp12 Date of release: 2002 Feb 28 Document order number: 9397 750 09386