2N5551 / MMBT5551

2N5551 MMBT5551

E
C TO-92
B SOT-23 B
E
Mark: 3S

NPN General Purpose Amplifier

This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 160 V
VCBO Collector-Base Voltage 180 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 600 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N5551 *MMBT5551
PD Total Device Dissipation 625 350 mW
Derate above 25°C 5.0 2.8 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 2001 Fairchild Semiconductor International 2N5551/MMBT5551, Rev A

 2N5551 / MMBT5551
NPN General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 160 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 180 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
ICBO Collector Cutoff Current VCB = 120 V, IE = 0, 50 nA
VCB = 120 V, IE = 0, TA = 100°C 50 µA
IEBO Emitter Cutoff Current VEB = 4.0 V, IC = 0 50 nA

ON CHARACTERISTICS
hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V 80
IC = 10 mA, VCE = 5.0 V 80 250
IC = 50 mA, VCE = 5.0 V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.15 V
IC = 50 mA, IB = 5.0 mA 0.20 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 1.0 V
IC = 50 mA, IB = 5.0 mA 1.0 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 10 V, 100 300 MHz
f = 100 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0, 6.0 pF
f = 1.0 MHz
Cibo Input Capacitance VBE = 0.5 V, IC = 0,
f = 1.0 MHz
20 pF
3
hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, 50 250
f = 1.0 kHz
NF Noise Figure IC = 250 µA, VCE = 5.0 V, 8.0 dB
RS=1.0 kΩ, f=10 Hz to 15.7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m
Vtf=5 Xtf=8 Rb=10)
 2N5551 / MMBT5551
NPN General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

VCESAT - COLLECTOR EMITTE R VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
h FE - TYP ICAL PULSED CURRE NT GAIN

250 0.5

200 125 °C 0.4

β = 10

150 0.3
25 °C 25 °C

100 0.2
- 40 °C
125 °C
V C E = 5V
50 0.1
- 40 °C

0 0
0.1 0.2 0.5 1 2 5 10 20 50 100 1 10 100 200
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRE NT (mA)

Base-Emitter Saturation Base Emitter ON Voltage vs

Collector Current
V BEON - BASE EMITTER ON VOLTAGE (V)

Voltage vs Collector Current

V BESAT - BASE EMITTER VOLTAGE (V)

1
β = 10 - 40 °C
1

0.8 0.8
25 °C - 40 °C
0.6 25 °C
125 °C
0.6

125 °C
0.4 0.4
VCE = 5V
0.2 0.2

0 0
0.1 1 10 100 200
1 10 100 200
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRE NT (mA)

Collector-Cutoff Current Collector-Emitter Breakdown

vs. Ambient Temperature Voltage with Resistance
50 Between Emitter-Base
I CBO- COLLE CTOR CURRENT (nA)

BV CER - BREAKDOWN VOLTAGE (V)

VCB = 100V 260

I C = 1.0 mA
240

10
220

200

180

1 160
25 50 75 100 125 0.1 1 10 100 1000
TA - AMBIE NT TEMP ERATURE ( ° C) RESISTANCE (kΩ )
 2N5551 / MMBT5551
NPN General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Input and Output Capacitance Small Signal Current Gain

vs Reverse Voltage vs Collector Current

h FE - SMALL SIGNAL CURRENT GAIN

30 16
f = 1.0 MHz FREG = 20 MHz
25 V CE = 10V
CAPACITANCE (pF)

12
20

15 8

10 C ib
4
5
C cb

0 0
0.1 1 10 100 1 10 50
V CE - COLLECTOR VOLTAGE (V) I C - COLLECTOR CURRENT (mA)

Power Dissipation vs
Ambient Temperature
700
PD - POWER DISSIPATION (mW)

600

500

400 SOT-23
TO-92
3
300

200

100

0
0 25 50 75 100 125 150
TEMPERATURE ( o C)
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G