EXPERIMENT # 02

“To find the configuration of Bi-polar Junction transistors”

Apparatus:
 BJT (2N-3904 Transistor)
 BJT (P313-C945 Transistor)
 BJT (A1015-331 Transistor)
 Multimeter
 Bread board

Theory:

BI-polar junction Transistor:

The BJT is constructed with three doped semiconductor regions separated by two
pn junctions.The three regions are called emitter, base, and collector. There are two types of
transistors. Physical representations of the two types of BJTs are shown in figure.

One type consists of two n regions separated by a p region (npn), and the other type consists of
two p regions separated by a n region (pnp). Both holes and electrons are used as current
carriers in the transistor structure. The pn junction joining the base region and the emitter
region is called the base-emitter junction. The pn junction joining the base region and the
collector region is called the base-collector junction,as indicated in Figure . A wire lead connects
to each of the three regions, as shown. These leads are labeled E, B, and C for emitter, base,
and collec-tor, respectively. The base region is lightly doped and very thin compared to the
heavily doped emitter and the moderately doped collector regions.

Symbolic diagram of npn and pnp BJTs are shown.

Procedure:
There are two procedure to find the terminals of a bi-polar junction transistors.

 Proocedure 1:
1. Take a bread board.
2. Hold the transistor in bread board whoes configuration is to be determine.
3. Set the knob of multimeter on the symbol of diode.
4. keep the red colour wire common on one of the the three terminals and touch the
black wire with other two terminals one by one as shown in figures below.
5. The process will be repeated on all the terminals.
6. The terminal for which the multimeter shows reading will be base and the transisitor
will be NPN.
7. Keep the base common and the terminal for which multimeter shows larger reading
will be emitter and the other will be collector.
8. For PNP transisor the the black wire will be common and the multimeter donot shows
reading if we keep red wire common.
9. The process will remain same.
 Red wire Black wire Black Wire Red wire

 Procedure 2:
1. The configuration of BJT can also be find by multimeter.
2. Insert the wires of transistor in the holes for emitter,collector and base one by one as
shown.
3. The holes are different for NPN and PNP transistor.

Observations:
 2N-3904

NPN

Sequence of terminals keeping flate surface in front is

E B C

A1015-331

PNP

Sequence of terminals keeping flate surface in front is

E C B

P313-C945

NPN

Sequence of terminals keeping flate surface in front is

B C E

Comments:

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 EXPERIMENT # 03

“To study the characteristics of Bi-polar Junction Transistor”

Apparatus:
 Multimeter
 BJT (Transistor3904)
 Connecting leads, Bread board
 DC power supply
 Resistors

Theory:

Collector Characteristic Curves:

Collector characteristic curve is a graph that show how
the collector current, IC, varies with the collector-to-emitter voltage, VCE, for specified values of
base current, IB. Using a circuit like that shown in Figure (a), a set of collector characteristic
curves can be generated.

Assume that VBB is set to produce a certain value of IB and VCC is zero. For this
condition, both the base-emitter junction and the base-collector junction are forward-biased
because the base is at approximately 0.7 V while the emitter and the collector are at 0 V. The
base current is through the base-emitter junction because of the low impedance path to
ground and, therefore, IC is zero. When both junctions are forward-biased, the transistor is in
the saturation region of its operation. Saturation is the state of a transistor in which the
collector current has reached a maximum and is independent of the base current.

As VCC is increased, VCE increases as the collector current increases. This is indicated
by the portion of the characteristic curve between points A and B in Figure (b). IC increases as
VCC is increased because VCE remains less than 0.7 V due to the forward-biased base-collector
junction.

When VCE exceeds 0.7 V, the base-collector junction becomes reverse-biased and the
transistor goes into the active, or linear, region of its operation. Once the base-collector
junction is reverse-biased, IC levels off and remains essentially constant for a given value of IB as
VCE continues to increase. Actually, IC increases very slightly as VCE increases due to widening of
the base-collector depletion region. This results in fewer holes for recombination in the base
region which effectively causes a slight increase in βDC. This is shown by the portion of the
characteristic curve between points B and C in figure (b). For this portion of the characteristic
curve, the value of IC is determined only by the relationship expressed as IC= βDCIB.

When VCE reaches a sufficiently high voltage, the reverse-biased base-collector junction goes
into breakdown; and the collector current increases rapidly as indicated by the part of the curve
to the right of point C in Figure (b). A transistor should never be operated in this breakdown
region.

A family of collector characteristic curves is produced when IC versus VCE is plotted

for several values of IB, as illustrated in Figure (c). When IB = 0, the transistor is in the cutoff
region although there is a very small collector leakage current as indicated. Cutoff is the
nonconducting state of a transistor. The amount of collector leakage current for IB= 0 is
exaggerated on the graph for illustration.
Cutoff:
When IB= 0, the transistor is in the cutoff region of its operation. Under this condition,
there is a very small amount of collector leakage current, ICeo, due mainly to thermally produced
carriers. Because ICeo is extremely small, it will usually be neglected in circuit analysis so that VCE
VCC. In cutoff, neither the base-emitter nor the base-collector junctions are forward-biased. The
subscript CEO represents collector-to-emitter with the base open.

Saturation:
Saturation is the state of a transistor in which the collector current has reached a
maximum and is independent of the base current.

Procedure:
1. Take the bread board and then connect the transistors and the connecting leads
according to circuit diagram.
2. After connecting the transistor, connect the DC power supply as V BE and VBC .
3. Set the voltage VBC at a particular voltage and change VBE in a sequence.
4. Note the value of IE and VCE against each value of VBE .
5. Taking IC approximately equal to IE .
6. Plot the characteristic graph of transistors between IC and VCE .

Circuit Diagram:
Observations & Calculations:
At VBC = 0V

VBE(V) VCE(V) IE(mA)

At VBC = 1V

VBE(V) VCE(V) IE(mA)

At VBC = 2V

VBE(V) VCE(V) IE(mA)

Characteristics Curve:

Comments:

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