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Birla Institute of Technology & Science, Pilani Work Integrated Learning Programmes Digital Learning

This document provides details of the course "Physics and Modeling of Microelectronic Devices" including the course objectives, teaching methodology, textbooks, modular content structure, learning outcomes, class schedule, evaluation scheme, and plans for laboratory work and work integration. The course aims to impart understanding of basic physical concepts behind microelectronic devices and modeling information to apply these devices as circuit elements. The content is divided into 13 modules covering topics such as semiconductor physics, metal-semiconductor contacts, PN junctions, bipolar transistors, MOS electronics, and photonic devices. Student performance will be evaluated through a midterm exam, quizzes/assignments, and a comprehensive final exam.

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sudha mallik
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81 views5 pages

Birla Institute of Technology & Science, Pilani Work Integrated Learning Programmes Digital Learning

This document provides details of the course "Physics and Modeling of Microelectronic Devices" including the course objectives, teaching methodology, textbooks, modular content structure, learning outcomes, class schedule, evaluation scheme, and plans for laboratory work and work integration. The course aims to impart understanding of basic physical concepts behind microelectronic devices and modeling information to apply these devices as circuit elements. The content is divided into 13 modules covering topics such as semiconductor physics, metal-semiconductor contacts, PN junctions, bipolar transistors, MOS electronics, and photonic devices. Student performance will be evaluated through a midterm exam, quizzes/assignments, and a comprehensive final exam.

Uploaded by

sudha mallik
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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BIRLA INSTITUTE OF TECHNOLOGY & SCIENCE,

PILANI
WORK INTEGRATED LEARNING PROGRAMMES
Digital Learning

Part A: Content Design

Course Title Physics and Modeling of Microelectronic Devices (PMMD)

Course No(s) MEL G631

Credit Units 5

Credit Model Class unit-1-1-2

1 unit for class room hours, 0.2 unit for assignment, 2 units for
student preparation. (Typically 1 unit translates to 32 hours)

Course Author Sindhu S

Version No 1.1

Date 4/9/2015

Course Objectives

This course aims at making the basic physical concepts behind microelectronic devices clear
and imparts modeling information about these devices for their use as circuit elements in
integrated circuits The course covers the basic technology, models, properties, and concepts
associated with Semiconductors and Semiconductor

No Course Objective

CO1 Understanding of basic Physical concept

CO2 Basic technology

CO3 Concept of semiconductirs


Teaching methodology
Teaching method includes class room lectures, quiz, exercises, work integration..

Text Book(s)

T1 Muller R. S and Kamins T. I., “Device Electronics for Integrated circuits”, John Wiley, 3 rd
ed., 2003

Reference Book(s) & other resources

R1 (i) Sze S. M., “Physics of Semiconductor Devices”, 2 nd Ed., Wiley Eastern, 1981.

R2 (ii) Tyagi M. S., “ Introduction to Semiconductor Materials and Devices”, John

Wiley & Sons, 1991

Modular Content Structure

1. Semicondcutor Physics

1.1. Fundamental of semiconductors; Band and Bond Models


1.1.1. Concepts of Holes, Mobility Drift, Diffusion, etc.

1.2. Metal Semiconductor contact


1.2.1. Meaning of Equilibrium in Electronic System
1.2.2. Ideal M-S Contact Without & With Bias and Variation of Charge, Potential etc
1.2.3. Schottky Contacts

1.3. Surface states and effects


1.4. P N Junction
1.5. Effect of Bias and Junction Breakdown
1.6. JFET, its working and analysis
1.7. Current in PN junction
1.8. Current Voltage characteristics
1.9. Bipolar transistor
1.10. MOS Electronics
1.11. MOS Capacitance
1.12. Mos Capacitance
1.13. Oxide charges in MOS
1.14. MOSFET Physical efffect

2. Photonics devices

Learning Outcomes:

No Learning Outcomes

LO1 Strong Basic concepts

LO2 Applications of theory

LO3 Link with day to day work

Part B: Course Handout

Academic Term I Sem 2015-16

Course Title Physics and Modelling of Microelectronic Devices

Course No MEL G631

Lead Instructor Sindhu S

Contac List of Topic Title Topic # References


t Hour (from content structure in (from content (Chap/Sec)(Text
Part A) structure in Part Book)
A)
1 Fundamental of semiconductors; Band Semiconductor 1.1,1.2 & 1.3
and Bond Models ,Concepts of Holes, Materials ,Free Carriers
Mobility Drift, Diffusion, etc and Hall Effect
Measurements

2 . Meaning of Equilibrium in Electronic Metal-Semiconductor 3.1,3.2,3.3,3.4


System ,Ideal M-S Contact Without & Contact, M-S Junctions
With Bias and Variation of Charge, ,M-S Contact
Potential, Field, etc., Schottky Contacts

3 Surface States & Effects Surface Effects 3.5

4 Effects of Impurity Distribution and Types pn junction ,pn junction 4.1,4.2,4.3,4.4


of p-n junction and their properties under bias
..Effect of Bias and Junction Breakdown.

5 JFET, its working and analysis JFET 4.5

6 Continuity Equation, Generation & Currents in pn junction 5.1,5.2,5.3


Recombination, Localized States. Ideal- .Current-Voltage
Diode Analysis and Validity of Characteristics
Approximations in the same

7 Transistor action, Various bias conditions Bipolar transistor 6.1,6.2


and use in IC. npn transistor under active Transistor under active
bias, its function, parameters bias

8 Transistor switching and different regions Transistor switching 6.3


of operation

9 MOS structure, energy band diagrams in MOS system 8.1,8.2


equilibrium/ under bias conditions

10 Equilibrium and non-equilibrium analysis MOS Electronics 5.1 & 5.2


in MOS electronics

11 Capacitance of MOS system and its MOS Capacitance 8.4


variation

12 Effect of oxide and interface charges on Oxide charges in MOS 8.5


MOS system

13 Basic MOSFET Behavior MOSFET-Physical Effects 9.1

14 Various parameters of MOSFET MOSFET 9.3,9.4

15 High Field Effects in MOSFETs MOSFET-Physical Effects 10.1 to 10.4

16 LED and semiconductor similar to other lasers


PHOTONIC DEVICES External sources
such as (solid static ruby laser and He-Ne gas
laser). Important light source for optical fiber
communication.

Photo Detectors, Solar cells

Detailed Plan for Lab work/Design work

La Lab Objective Lab Sheet Conten


b Access URL t
No Refere
nce

1 Hand written report and use of Matlab to do the Class room session only Class notes
calculation part or Seminars or Quizzes

Work integration: Detailed plan

No Activity description

1 Apply concept to the work

3 Talk by eminent physicist -concept

Evaluation Scheme

Evaluatio Name Type Weig Dura Day, Date,


n (Quiz, Lab, Project, Mid (Open book, ht tion Session,
Compone term exam, End Closed book, Time
nt semester exam, etc) Online, etc.)

EC - 1 Mid Sem Exam Closed Book 30% 1.5hrs

EC - 2 Quizz/Assignment/seminar 20%

EC - 3 Comprehensive exam 50% 2.5hrs

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