NTR4101P

Trench Power MOSFET

−20 V, Single P−Channel, SOT−23
Features
• Leading −20 V Trench for Low RDS(on)
• −1.8 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint http://onsemi.com
• Pb−Free Package is Available
Applications V(BR)DSS RDS(ON) TYP ID MAX
• Load/Power Management for Portables
70 m
@ −4.5 V
• Load/Power Management for Computing −20 V 90 m
@ −2.5 V −3.2 A
• Charging Circuits and Battery Protection 112 m
@ −1.8 V

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit P−Channel MOSFET
S
Drain−to−Source Voltage VDSS −20 V
Gate−to−Source Voltage VGS ±8.0 V
Continuous Drain Steady TA = 25°C ID −2.4 A G
Current (Note 1) State
TA = 85°C −1.7
t ≤ 10 s TA = 25°C −3.2
Power Dissipation Steady TA = 25°C PD 0.73 W
(Note 1) State D
t ≤ 10 s 1.25
Continuous Drain Steady TA = 25°C ID −1.8 A MARKING DIAGRAM &
Current (Note 2) State PIN ASSIGNMENT
TA = 85°C −1.3
3
Power Dissipation TA = 25°C PD 0.42 W
(Note 2) 3 Drain

Pulsed Drain Current tp = 10 s IDM −7.5 A

1 TR4
ESD Capability (Note 3) C = 100 pF, ESD 225 V W
RS = 1500
2

Operating Junction and Storage Temperature TJ, −55 to °C SOT−23

150 1 2
TSTG CASE 318
Gate Source
STYLE 21
Source Current (Body Diode) IS −2.4 A
Lead Temperature for Soldering TL 260 °C TR4 = Device Code
Purposes (1/8” from case for 10 s) W = Work Week
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are ORDERING INFORMATION
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected. Device Package Shipping†
THERMAL RESISTANCE RATINGS
NTR4101PT1 SOT−23 3000/Tape & Reel
Parameter Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1) RJA 170 °C/W NTR4101PT1G SOT−23 3000/Tape & Reel
Pb−Free
Junction−to−Ambient − t < 10 s (Note 1) RJA 100
†For information on tape and reel specifications,
Junction−to−Ambient − Steady State (Note 2) RJA 300
including part orientation and tape sizes, please
1. Surface−mounted on FR4 board using 1 in sq pad size refer to our Tape and Reel Packaging Specifications
(Cu area = 1.127 in sq [1 oz] including traces) Brochure, BRD8011/D.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0

 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

October, 2004 − Rev. 3 NTR4101P/D
 NTR4101P

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4) V(BR)DSS −20 V
(VGS = 0 V, ID = −250 A)
Zero Gate Voltage Drain Current (Note 4) IDSS −1.0 A
(VGS = 0 V, VDS = −16 V)
Gate−to−Source Leakage Current IGSS ±100 nA
(VGS = ±8.0 V, VDS = 0 V)

ON CHARACTERISTICS
Gate Threshold Voltage (Note 4) VGS(th) −0.40 −0.720 −1.5 V
(VGS = VDS, ID = −250 A)
Drain−to−Source On−Resistance RDS(on) m

(VGS = −4.5 V, ID = −1.6 A) 70 85
(VGS = −2.5 V, ID = −1.3 A) 90 120
(VGS = −1.8 V, ID = −0.9 A) 112 210
Forward Transconductance (VDS = −5.0 V, ID = −2.3 A) gFS 75 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance Ciss 675 pF
Output Capacitance ((VGS = 0 V,, f = 1 MHz,, VDS = −10 V)) Coss 100
Reverse Transfer Capacitance Crss 75
Total Gate Charge (VGS = −4.5 V, VDS = −10 V, ID = −1.6 A) QG(tot) 7.5 8.5 nC
Gate−to−Source Gate Charge (VDS = −10 V, ID = −1.6 A) QGS 1.2 nC
Gate−to−Drain “Miller” Charge (VDS = −10 V, ID = −1.6 A) QGD 2.2 nC
Gate Resistance RG 6.5

SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time td(on) 7.5 ns
Rise Time (VGS = −4.5
4.5 V, VDS = −10
10 V, tr 12.6
Turn−Off Delay Time ID = −1.6 A, RG = 6.0
) td(off) 30.2
Fall Time tf 21.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage (VGS = 0 V, IS = −2.4 A) VSD −0.82 −1.2 V
Reverse Recovery Time trr 12.8 15 ns
(VGS = 0 V,
V
Charge Time ta 9.9 ns
dISD/dt = 100 A/s, IS = −1.6 A)
Discharge Time tb 3.0 ns
Reverse Recovery Charge Qrr 1008 nC
4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.

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 NTR4101P

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

10 10
VGS = −10 V − −2.4 V TJ = 25°C TJ = −55°C
9

−ID, DRAIN CURRENT (AMPS)

−ID, DRAIN CURRENT (AMPS)

−2.2 V 25°C
8 8 125°C
7
6 −2.0 V 6
5
4 −1.8 V 4
. 3
2 −1.6 V 2
1 VDS ≥ 20 V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (
)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (
)

0.1 0.15
VGS = −5.0 V T = 125°C 0.14 TJ = 25°C
0.09
0.13
0.08 0.12
T = 25°C 0.11 VGS = −2.5 V
0.07
0.10
0.06 0.09
T = −55°C 0.08
0.05 VGS = −4.5 V
0.07
0.04 0.06
0.05
0.03 0.04
0.02 0.03
0.02
0.01 0.01
0 0
1 3 5 7 9 1 2 3 4 5 6 7 8 9 10
−ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and
Temperature Temperature

100000
1.4 ID = −1.6 A VGS = 0 V
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

10000
TJ = 150°C
−IDSS, LEAKAGE (nA)

1.2

1000
1.0 TJ = 125°C

100
0.8

0.6 10

0.4 1.0
−50 −25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current

Temperature vs. Voltage

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 NTR4101P

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1000 4.0
VGS = 0 V TJ = 25°C QT
3.5
800
C, CAPACITANCE (pF)

Ciss 3.0

2.5
600 VDS VGS
2.0 Qgs Qgd
400 1.5

1.0
200 Coss
0.5 ID = −1.6 A
Crss TJ = 25°C
0 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source

Voltage vs. Total Gate Charge

1000 5
VDD = −10 V VGS = 0 V
−IS, SOURCE CURRENT (AMPS)
4.5
ID = −1.6 A TJ = 25°C
VGS = −4.5 V 4

100 3.5
t, TIME (ns)

3
2.5
td(off) 2
10 tf
tr 1.5
td(on)
1
0.5
1 0
1 10 100 0 0.2 0.4 0.6 0.8 1.0
RG, GATE RESISTANCE (OHMS) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance

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 NTR4101P

PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A 3. MAXIMUM LEAD THICKNESS INCLUDES
L LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3 4. 318−03 AND −07 OBSOLETE, NEW
B S STANDARD 318−08.
1 2
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
V G
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
C K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
D H J V 0.0177 0.0236 0.45 0.60
K
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN

SOLDERING FOOTPRINT*
0.95
0.95 0.037
0.037

2.0
0.079

0.9
0.035

0.8
0.031
SCALE 10:1
inches
mm 

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 NTR4101P

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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