NTUD3127C

Small Signal MOSFET

20 V, 200 mA / −180 mA, Complementary,
1.0 x 1.0 mm SOT−963 Package

Features http://onsemi.com
• Complementary MOSFET Device
• 1.5 V Gate Voltage Rating V(BR)DSS RDS(on) Max ID Max
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
5.0 W @ −4.5 V
Thin Environments such as Portable Electronics.
P−Channel 7.0 W @ −2.5 V
• These are Pb−Free Devices −20 V −0.18 A
10 W @ −1.8 V
Applications 14 W @ −1.5 V
• Load Switch with Level Shift 3.0 W @ 4.5 V
• Optimized for Power Management in Ultra Portable Equipment N−Channel 4.0 W @ 2.5 V
0.20 A
20 V 6.0 W @ 1.8 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
10 W @ 1.5 V
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 20 V PINOUT: SOT−963
Gate−to−Source Voltage VGS ±8 V
N−Channel TA = 25°C 160 S1 1 6 D1
Steady
Continuous Drain State
Current (Note 1) TA = 85°C 115
tv5s TA = 25°C 200 G1 2 5 G2
ID mA
P−Channel Steady TA = 25°C −140
Continuous Drain State
Current (Note 1) TA = 85°C −100
D2 3 4 S2
tv5s TA = 25°C −180
Power Dissipation Steady 125
(Note 1) State Top View
TA = 25°C PD mW
tv5s 200
MARKING
Pulsed Drain Current N−Channel 800
tp = 10 ms IDM mA DIAGRAM
P−Channel −600
Operating Junction and Storage Temperature TJ, −55 to °C SM
TSTG 150 SOT−963
CASE 527AA 1
Source Current (Body Diode) (Note 2) IS 200 mA
Lead Temperature for Soldering Purposes 260 °C
TL S = Specific Device Code
(1/8” from case for 10 s)
M = Date Code
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
ORDERING INFORMATION
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
Device Package Shipping†
1 oz. Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2% NTUD3127CT5G SOT−963 8000 / Tape & Reel
(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2008 1 Publication Order Number:

August, 2008 − Rev. 1 NTUD3127C/D
 NTUD3127C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit
Junction−to−Ambient – Steady State, Minimum Pad (Note 3) RqJA 1000 °C/W
Junction−to−Ambient – t v 5 s (Note 3) 600
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol N/P Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage N ID = 250 mA 20
V(BR)DSS VGS = 0 V V
P ID = −250 mA −20
Zero Gate Voltage Drain Current TJ = 25°C 50
N VGS = 0 V, VDS = 5.0 V
TJ = 85°C 200
IDSS nA
TJ = 25°C −50
P VGS = 0 V, VDS = −5.0 V
TJ = 85°C −200
Zero Gate Voltage Drain Current N VGS = 0 V, VDS = 16 V 100
IDSS TJ = 25°C nA
P VGS = 0 V, VDS= −16 V −100
Gate−to−Source Leakage Current N 100
IGSS VDS = 0 V, VGS = ±5.0 V nA
P −100
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage N VGS = VDS ID = 250 mA 0.4 1.0 V
VGS(TH)
P ID = −250 mA −0.4 −1.0
Drain−to−Source On Resistance N VGS = 4.5 V, ID = 100 mA 1.5 3.0
P VGS = −4.5V, ID = −100 mA 4.0 5.0
N VGS = 2.5 V, ID = 50 mA 2.0 4.0
P VGS = −2.5V, ID = −50 mA 5.0 7.0
N VGS = 1.8 V, ID = 20 mA 3.0 6.0
RDS(on) W
P VGS = −1.8V, ID = −20 mA 6.5 10
N VGS = 1.5 V, ID = 10 mA 4.0 10
P VGS = −1.5 V, ID = −10 mA 7.5 14
N VGS = 1.2 V, ID = 1.0 mA 5.5
P VGS = −1.2 V, ID = −1.0 mA 11.5
Forward Transconductance N VDS = 5.0 V, ID = 125 mA 0.35
gFS S
P VDS = −5.0 V, ID = −125 mA 0.26
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance CISS 9.0
Output Capacitance COSS f = 1 MHz, VGS = 0 V 3.0
N
VDS = 15 V
Reverse Transfer Capacitance CRSS 2.2
pF
Input Capacitance CISS 12
Output Capacitance COSS f = 1 MHz, VGS = 0 V 2.7
P
VDS = −15 V
Reverse Transfer Capacitance CRSS 1.0
4. Switching characteristics are independent of operating junction temperatures

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 NTUD3127C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol N/P Test Condition Min Typ Max Unit
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time td(ON) 15
Rise Time tr VGS = 4.5 V, VDD = 10 V, ID = 200 mA, 24
N
Turn−Off Delay Time td(OFF) RG = 2.0 W 90
Fall Time tf 60
ns
Turn−On Delay Time td(ON) 20
Rise Time tr VGS = −4.5 V, VDD = −15 V, 37
P
Turn−Off Delay Time td(OFF) ID = −180 mA, RG = 2.0 W 112
Fall Time tf 97
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage N VGS = 0 V, IS = 10 mA 0.60 1.0
VSD TJ = 25°C V
P VGS = 0 V, IS = −10 mA −0.65 −1.0
4. Switching characteristics are independent of operating junction temperatures

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 NTUD3127C

TYPICAL PERFORMANCE CURVES − N−CHANNEL

0.4 0.4
VGS = 3 V to 5 V TJ = 25°C VDS ≥ 5 V TJ = 125°C

ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)

2.5 V TJ = −55°C
0.3 2.0 V 0.3 TJ = 25°C

0.2 0.2

1.5 V
0.1 0.1

1.0 V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

15 2.5
ID = 200 mA TJ = 25°C
TJ = 25°C VGS = 2.5 V
2.0

10
1.5
VGS = 4.5 V

1.0
5

0.5

0 0
0 1 2 3 4 5 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage

1.75 1000
VGS = 0 V
ID = 200 mA
1.5
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

VGS = 4.5 V

1.25 TJ = 150°C
IDSS, LEAKAGE (nA)

100
1.0
TJ = 125°C
0.75
10
0.5

0.25

0 1
−50 −25 0 25 50 75 100 125 150 0 4 8 12 16 20
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current

Temperature vs. Voltage

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 NTUD3127C

TYPICAL PERFORMANCE CURVES − N−CHANNEL

15 1000
VGS = 0 V VDD = 10 V
TJ = 25°C ID = 200 mA
C, CAPACITANCE (pF)

12 VGS = 4.5 V

Ciss 100 td(off)

t, TIME (ns)
9 tf

tr
6 td(on)
10
Coss
3

Crss
0 1
0 2 4 6 8 10 12 14 16 18 20 1 10 100
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) RG, GATE RESISTANCE (OHMS)
Figure 7. Capacitance Variation Figure 8. Resistive Switching Time
Variation vs. Gate Resistance

0.2
VGS = 0 V
IS, SOURCE CURRENT (AMPS)

TJ = 25°C
0.15

0.1

0.05

0
0 0.2 0.4 0.6 0.8 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Diode Forward Voltage vs. Current

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 NTUD3127C

TYPICAL PERFORMANCE CURVES − P−CHANNEL

0.36 0.36
VGS = 3.5 V to 5 V TJ = 25°C VDS ≥ 5 V TJ = −55°C
0.32 TJ = 125°C
0.32
3.0 V

ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)

0.28 2.5 V
0.28
TJ = 25°C
0.24 0.24
0.20 2.0 V
0.20
0.16 0.16
0.12 0.12
1.5 V
0.08 0.08
0.04 0.04
1.0 V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 10. On−Region Characteristics Figure 11. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

12 6
ID = 180 mA TJ = 25°C
TJ = 25°C VGS = 2.5 V
5

8 4

3 VGS = 4.5 V

4 2

0 0
0 1 2 3 4 5 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)

Figure 12. On−Resistance vs. Gate Voltage Figure 13. On−Resistance vs. Drain Current
and Gate Voltage

1.75 1000
VGS = 0 V
ID = 180 mA
1.5
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

VGS = 4.5 V
TJ = 150°C
1.25
IDSS, LEAKAGE (nA)

100
1.0 TJ = 125°C

0.75
10
0.5

0.25

0 1
−50 −25 0 25 50 75 100 125 150 0 4 8 12 16 20
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 14. On−Resistance Variation with Figure 15. Drain−to−Source Leakage Current
Temperature vs. Voltage

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 NTUD3127C

TYPICAL PERFORMANCE CURVES − P−CHANNEL

16 1000
VDD = 10 V
Ciss ID = 180 mA
C, CAPACITANCE (pF)

VGS = 4.5 V
12
td(off)
100
VGS = 0 V tf

t, TIME (ns)
TJ = 25°C tr
8
td(on)

10
4
Coss

Crss
0 1
0 2 4 6 8 10 12 14 16 18 20 1 10 100
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) RG, GATE RESISTANCE (OHMS)
Figure 16. Capacitance Variation Figure 17. Resistive Switching Time
Variation vs. Gate Resistance

0.18
VGS = 0 V
0.16
IS, SOURCE CURRENT (AMPS)

TJ = 25°C
0.14
0.12

0.10
0.08

0.06
0.04
0.02
0
0 0.2 0.4 0.6 0.8 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 18. Diode Forward Voltage vs. Current

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 NTUD3127C

PACKAGE DIMENSIONS

SOT−963
CASE 527AA−01
ISSUE D

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
D −Y− L Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
−X− 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
6 5 4 IS THE MINIMUM THICKNESS OF BASE MATERIAL.
E HE MILLIMETERS INCHES
1 2 3 DIM MIN NOM MAX MIN NOM MAX
A 0.40 0.45 0.50 0.016 0.018 0.020
b 0.10 0.15 0.20 0.004 0.006 0.008
C 0.05 0.10 0.15 0.002 0.004 0.006
e C D 0.95 1.00 1.05 0.037 0.039 0.041
E 0.75 0.80 0.85 0.03 0.032 0.034
b 6X
e 0.35 BSC 0.014 BSC
L 0.05 0.10 0.15 0.002 0.004 0.006
0.08 X Y HE 0.95 1.00 1.05 0.037 0.039 0.041

SOLDERING FOOTPRINT*
0.35 0.35
0.014 0.014

0.90
0.0354 0.20
0.008

0.20
0.008
SCALE 20:1 ǒinches
mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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