2SA1241

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1241
Power Amplifier Applications
Unit: mm
Power Switching Applications

• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)

• Excellent switching time: tstg = 1.0 µs (typ.)
• Complementary to 2SC3076

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −50 V

Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
Collector current IC −2 A
Base current IB −1 A

Collector power Ta = 25°C 1.0

PC W
dissipation Tc = 25°C 10
JEDEC ―
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
JEITA ―
TOSHIBA 2-7B1A

Weight: 0.36 g (typ.)

JEDEC ―
JEITA ―
TOSHIBA 2-7J1A

Weight: 0.36 g (typ.)

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = −50 V, IE = 0 ― ― −1.0 µA

Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −1.0 µA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V
hFE (1)
VCE = −2 V, IC = −0.5 A 70 ― 240
DC current gain (Note)
hFE (2) VCE = −2 V, IB = −1.5 A 40 ― ―
Collector-emitter saturation voltage VCE (sat) IC = −1 A, IB = −0.05 A ― ― −0.5 V
Base-emitter saturation voltage VBE (sat) IC = −1 A, IB = −0.05 A ― ― −1.2 V
Transition frequency fT VCE = −2 V, IC = −0.5 A ― 100 ― MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 40 ― pF

Turn-on time ton OUTPUT ― 0.1 ―

IB2
20 µs INPUT

30 Ω
IB2
IB1
Switching time Storage time tstg ― 1.0 ― µs
IB1

VCC = −30 V

Fall time tf −IB1 = IB2 = 0.05 A ― 0.1 ―

DUTY CYCLE ≤ 1%

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

A1241 Product No.

Lot No.

hFE Classification

Explanation of Lot No.

Month of manufacture: January to December are denoted by letters A to L respectively.

Year of manufacture: last decimal digit of the year of manufacture

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VCE – IC VCE – IC
−1.0 −1.0
Common emitter Common emitter
(V)

(V)
Tc = 25°C −20 −30 −40 −60 Tc = 100°C
IB = −5 mA
−0.8 −0.8
−80
Collector-emitter voltage VCE

Collector-emitter voltage VCE

−10 −20 −40 −80 IB = −5 mA
−120 −120
−0.6 −0.6 −160

−160 −180

−0.4 −200 −0.4 −200

−0.2 −0.2

0 0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8

Collector current IC (A) Collector current IC (A)

VCE – IC hFE – IC
−1.0 1000
Common emitter Common emitter
500
(V)

IB = −10 mA −40 −60 Tc = −55°C VCE = −2 V

hFE

−0.8 300 Tc = 100°C

Collector-emitter voltage VCE

−20 −30 −80

DC current gain

−0.6 −120 100 25

−160 50
−55
−0.4 −200 30

−0.2 10
−0.005 −0.01 −0.03 −0.1 −0.3 −1 −3

Collector current IC (A)

0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8

Collector current IC (A)

VCE (sat) – IC VBE (sat) – IC

−1 −10
Collector-emitter saturation voltage

Common emitter Common emitter

Base-emitter saturation voltage

−0.5 IC/IB = 20 −5 IC/IB = 20

−0.3 −3
VCE (sat) (V)

VBE (sat) (V)

Tc = 100°C Tc = −55°C
−0.1 −1

−0.05 −0.5
25
−0.03 −55 −0.3 100
25

−0.01 −0.1
−0.005−0.01 −0.03 −0.1 −0.3 −1 −3 −0.005−0.01 −0.03 −0.1 −0.3 −1 −3

Collector current IC (A) Collector current IC (A)

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IC – VBE PC – Ta
−2.0 12
(1) Tc = Ta infinite heat sink
Common emitter (2) Ceramic substrate

Collector power dissipation PC (W)

(1)
VCE = −2 V 10 50 × 50 × 0.8 mm
(3) No heat sink
(A)

−1.5

8
IC
Collector current

−1.0 6
Tc = 100°C
25 −55

4
(2)
−0.5
2
(3)

0 0
0 −0.4 −0.8 −1.2 −1.6 −2.0 0 25 50 75 100 125 150 175

Base-emitter voltage VBE (V) Ambient temperature Ta (°C)

Safe Operating Area

−5
IC max (pulsed)*
−3
1 ms*

IC max (continuous)

−1
DC operation
(A)

10 ms*
Thermal limited
−0.5 100 ms*
IC

−0.3
Collector current

S/B limited
−0.1

−0.05
*: Single nonrepetitive pulse
−0.03
Tc = 25°C
VCEO max
Curves must be derated linearly
with increase in temperature.

−0.01
−0.5 −1 −3 −5 −10 −30 −50 −100

Collector-emitter voltage VCE (V)

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RESTRICTIONS ON PRODUCT USE 000707EAA

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
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document shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

• The information contained herein is subject to change without notice.

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