HGTP7N60B3D, HGT1S7N60B3DS

Data Sheet December 2001

14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49191.

Features
14A, 600V, TC = 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode

Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR (FLANGE)

E C G

Ordering Information
PART NUMBER HGTP7N60B3D HGT1S7N60B3DS PACKAGE TO-220AB ALT TO-263AB BRAND JEDEC TO-263AB G7N60B3D G7N60B3D
G E COLLECTOR (FLANGE)

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S7N60B3DS9A.

Symbol
C

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2001 Fairchild Semiconductor Corporation

HGTP7N60B3D, HGT1S7N60B3DS Rev. B

HGTP7N60B3D, HGT1S7N60B3DS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Rectified Forward Current at TC = 152oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 14 7 6 56 20 30 35A at 600V 60 0.476 -55 to 150 260 2 12 W W/ oC
oC oC

UNITS V A A A A V V

600

s s

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES: 1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50 .

Electrical Specifications
PARAMETER

TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3.0 VCE = 480V VCE = 600V 42 35 TYP 1.8 2.1 5.1 7.7 23 30 26 21 130 60 160 120 MAX 100 3.0 2.1 2.4 6.0 100 28 37 160 80 200 200 UNITS V A mA V V V nA A A V nC nC ns ns ns ns J J

Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = IC110, VGE = 15V

Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA

VGE(TH) IGES SSOA

IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, RG = 50, VGE = 15V, L = 100H

Gate to Emitter Plateau Voltage On-State Gate Charge

VGEP QG(ON)

IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0. 5BVCES VGE = 15V VGE = 20V

Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3)

td(ON)I trI td(OFF)I tfI EON EOFF

IGBT and Diode Both at TJ = 25oC, ICE = IC110, VCE = 0.8 BVCES, VGE = 15V, RG = 50, L = 2mH, Test Circuit (Figure 19)

2001 Fairchild Semiconductor Corporation

HGTP7N60B3D, HGT1S7N60B3DS Rev. B

HGTP7N60B3D, HGT1S7N60B3DS
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr IEC = 7A IEC = 7A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s Thermal Resistance Junction To Case RJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. TEST CONDITIONS IGBT and Diode Both at TJ = 150oC ICE = IC110, VCE = 0.8 BVCES, VGE = 15V, RG = 50, L = 2mH, Test Circuit (Figure 19) MIN TYP 24 22 230 120 310 350 1.85 MAX 295 175 350 500 2.2 37 32 2.1 3.0 UNITS ns ns ns ns J J V ns ns
oC/W oC/W

Typical Performance Curves

16 ICE , DC COLLECTOR CURRENT (A)

Unless Otherwise Specified

ICE, COLLECTOR TO EMITTER CURRENT (A)

50

VGE = 15V 14 12 10 8 6 4 2 0 25 50 75 100 125 150

TJ = 150oC, RG = 50, VGE = 15V

40

30

20

10

100

200

300

400

500

600

700

TC , CASE TEMPERATURE (oC)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

2001 Fairchild Semiconductor Corporation

HGTP7N60B3D, HGT1S7N60B3DS Rev. B

HGTP7N60B3D, HGT1S7N60B3DS Typical Performance Curves

400 fMAX, OPERATING FREQUENCY (kHz)

Unless Otherwise Specified (Continued)

tSC , SHORT CIRCUIT WITHSTAND TIME (s)

TJ = 150oC, RG = 50, L = 2mH, VCE = 480V

TC 75oC 75oC 110oC 110oC

VGE 15V 10V 15V 10V

VCE = 360V, RG = 50, TJ = 125oC

100

14 ISC 10

80

60

10 f MAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 2.1oC/W, SEE NOTES 1 1 2 3 4 5 6 8 10 15 ICE, COLLECTOR TO EMITTER CURRENT (V)

6 tSC

40

2 10 11 12 13 14 VGE , GATE TO EMITTER VOLTAGE (V)

20 15

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

ICE, COLLECTOR TO EMITTER CURRENT (A)

30 25 20

ICE, COLLECTOR TO EMITTER CURRENT (A)

PULSE DURATION = 250s DUTY CYCLE < 0.5%, VGE = 10V

40

30 TC = 150oC TC = -55oC 20 TC = 25oC

TC = -55oC 15

TC = 150oC

TC = 25oC 10 5

10 PULSE DURATION = 250s DUTY CYCLE < 0.5%, VGE = 15V 0 1 2 3 5 7 4 6 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8

2 3 4 5 6 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE

FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE

1600 EOFF, TURN-OFF ENERGY LOSS (J) EON , TURN-ON ENERGY LOSS (J) RG = 50, L = 2mH, VCE = 480V TJ = 150oC, VGE = 10V TJ = 150oC, VGE = 15V 800 TJ = 25oC, VGE = 10V TJ = 25oC, VGE = 15V 400

1000

RG = 50, L = 2mH, V CE = 480V

800 TJ = 150oC, VGE = 10V and 15V 600

1200

400

200 TJ = 25oC, VGE = 10V and 15V 0 1 3 7 13 5 9 11 ICE , COLLECTOR TO EMITTER CURRENT (A) 15

11

13

15

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT

2001 Fairchild Semiconductor Corporation

HGTP7N60B3D, HGT1S7N60B3DS Rev. B

ISC, PEAK SHORT CIRCUIT CURRENT (A)

18

100

HGTP7N60B3D, HGT1S7N60B3DS Typical Performance Curves

60 tdI , TURN-ON DELAY TIME (ns) RG = 50, L = 2mH, VCE = 480V

Unless Otherwise Specified (Continued)

140 120

RG = 50, L = 2mH, V CE = 480V

50

trI , RISE TIME (ns)

TJ = 150oC, VGE = 10V TJ = 25oC, VGE = 10V TJ = 25oC, VGE = 15V

100 80 60 40 20 0 TJ = 25oC and 150oC, VGE = 15V 1 3 5 7 9 11 13 15 TJ = 150oC, VGE = 10V TJ = 25oC, VGE = 10V

40

30

20

TJ = 150oC, VGE = 15V

10

11

13

15

ICE , COLLECTOR TO EMITTER CURRENT (A)

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT

250 td(OFF)I , TURN-OFF DELAY TIME (ns)

RG = 50, L = 2mH, VCE = 480V

120

RG = 50, L = 2mH, VCE = 480V

TJ = 150oC, VGE = 15V TJ = 150oC, VGE = 10V 150

tfI , FALL TIME (ns)

200

100 TJ = 150oC, VGE = 10V and 15V 80

100 TJ = 25oC, VGE = 10V 50 1

TJ = 25oC, VGE = 15V

60 TJ = 25oC, VGE = 10V and 15V 9 11 13 15 40 1 3 5 7 9 11 13 15

ICE , COLLECTOR TO EMITTER CURRENT (A)

ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT

FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT

ICE, COLLECTOR TO EMITTER CURRENT (A)

40

VGE,GATE TO EMITTER VOLTAGE (V)

32

DUTY CYCLE = < 0.5% PULSE DURATION = 250s VCE = 10V TC = 25oC

15

Ig(REF) = 0.758mA, RL = 86, TC = 25oC

12 VCE = 200V 9 VCE = 400V VCE = 600V

24

16 TC = 150oC 8 TC = -55oC

10

12

14

12

16

20

24

28

VGE, GATE TO EMITTER VOLTAGE (V)

QG, GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC

FIGURE 14. GATE CHARGE WAVEFORMS

2001 Fairchild Semiconductor Corporation

HGTP7N60B3D, HGT1S7N60B3DS Rev. B

HGTP7N60B3D, HGT1S7N60B3DS Typical Performance Curves

Unless Otherwise Specified (Continued)

1200 FREQUENCY = 1MHz 1000 C, CAPACITANCE (pF) 800 600 400 COES 200 CRES 0 0 5 10 15 20 25 CIES

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE

ZJC , NORMALIZED THERMAL RESPONSE

100

DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PD

t1

10-1

t2 SINGLE PULSE 10-2 10-5 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-4 10-3 10-2 10-1 100 101

t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

IEC, EMITTER TO COLLECTOR CURRENT (A)

40

30

TJ = 25oC, dIEC/dt = 200A/s

trr
150oC 10 -55oC tr, RECOVERY TIMES (ns) 25

20

ta
15

25oC

10

tb

1 0.5

5 1.0 1.5 2.0 2.5 3.0 3.5 1 2 3 4 5 6 8 10 VEC, EMITTER TO COLLECTOR VOLTAGE (V) IEC, FORWARD CURRENT (A)

FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP

FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT

2001 Fairchild Semiconductor Corporation

HGTP7N60B3D, HGT1S7N60B3DS Rev. B

HGTP7N60B3D, HGT1S7N60B3DS Test Circuit and Waveforms

L = 2mH RHRD660 VGE RG = 50 VCE + VDD = 480V ICE 10% td(OFF)I tfI 90%

90% 10% EON EOFF

trI td(ON)I

FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT

FIGURE 20. SWITCHING TEST WAVEFORMS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handlers body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.

Operating Frequency Information

Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (I CE = 0).

2001 Fairchild Semiconductor Corporation

HGTP7N60B3D, HGT1S7N60B3DS Rev. B

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First Production

No Identification Needed

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Rev. H4