Hoja de Datos de Transistor AP2761
Hoja de Datos de Transistor AP2761
Hoja de Datos de Transistor AP2761
Thermal Data
Symbol Parameter Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.4 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃/W
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
3
VSD Forward On Voltage IS=10A, VGS=0V - - 1.5 V
trr Reverse Recovery Time IS=10A, VGS=0V, - 610 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 8.64 - µC
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A.
3.Pulse width <300us , duty cycle <2%.
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14 8
12
o 10V T C =150 o C 10V
T C =25 C 5.0V
6.0V
6
10
ID , Drain Current (A)
5.0V
4
2 V G =4.0V
2
V G =4.0V
0 0
0 5 10 15 20 25 0 5 10 15 20 25
1.2 2.8
2.4 I D =5A
V G =10V
Normalized BVDSS (V)
1.1
2
Normalized RDS(ON)
1.6
1.2
0.8
0.9
0.4
0.8 0
-50 0 50 100 150 -50 0 50 100 150
T j , Junction Temperature ( C)
o T j , Junction Temperature ( o C )
10
T j = 150 o C T j = 25 o C 3
IS (A)
VGS(th) (V)
0.1
1
0.01 0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150
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16 10000
f=1.0MHz
I D =10A
VGS , Gate to Source Voltage (V)
C iss
12
V DS =330V
V DS =410V
C oss
V DS =520V
C (pF)
8 100
C rss
0 1
0 10 20 30 40 50 60 70 80 1 5 9 13 17 21 25 29
100 1
Duty factor=0.5
Normalized Thermal Response (Rthjc)
10
0.2
1ms
ID (A)
0.1
1 0.1
10ms
0.05
t
1s T
0.1 0.01
DC
T c =25 o C Single Pulse Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01 0.01
0.1 1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
VDS VG
90%
QG
10V
QGS QGD
10%
VGS
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
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