AP2761I-A

Pb Free Plating Product

Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Repetitive Avalanche Rated BVDSS 650V

D
▼ Fast Switching RDS(ON) 1.0Ω
▼ Simple Drive Requirement ID 10A
▼ RoHS Compliant G
S
Description

AP2761 series are specially designed as main switching devices for

universal 90~265VAC off-line AC/DC converter applications.

TO-220CFM type provide high blocking voltage to overcome voltage surge

and sag in the toughest power system with the best combination of fast G
switching,ruggedized design and cost-effectiveness. D
S TO-220CFM(I)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage ±30 V
ID@TC=25℃ Continuous Drain Current, V GS @ 10V 10 A
ID@TC=100℃ Continuous Drain Current, V GS @ 10V 6.4 A
1
IDM Pulsed Drain Current 36 A
PD@TC=25℃ Total Power Dissipation 37 W
Linear Derating Factor 0.3 W/℃
EAS Single Pulse Avalanche Energy2 65 mJ
IAR Avalanche Current 10 A
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.4 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃/W

Data & specifications subject to change without notice 200706053-1/4

AP2761I-A
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 650 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 1 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=5A - 4.8 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA
o
Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=±30V - - ±100 nA
3
Qg Total Gate Charge ID=10A - 53 - nC
Qgs Gate-Source Charge VDS=520V - 10 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 15 - nC
3
td(on) Turn-on Delay Time VDD=320V - 16 - ns
tr Rise Time ID=10A - 20 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 82 - ns
tf Fall Time RD=32Ω - 36 - ns
Ciss Input Capacitance VGS=0V - 2770 - pF
Coss Output Capacitance VDS=15V - 320 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
3
VSD Forward On Voltage IS=10A, VGS=0V - - 1.5 V
trr Reverse Recovery Time IS=10A, VGS=0V, - 610 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 8.64 - µC

Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A.
3.Pulse width <300us , duty cycle <2%.

2/4
 AP2761I-A

14 8

12
o 10V T C =150 o C 10V
T C =25 C 5.0V
6.0V
6
10
ID , Drain Current (A)

ID , Drain Current (A)

8
4.5V
4

5.0V
4
2 V G =4.0V
2

V G =4.0V
0 0
0 5 10 15 20 25 0 5 10 15 20 25

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1.2 2.8

2.4 I D =5A

V G =10V
Normalized BVDSS (V)

1.1
2
Normalized RDS(ON)

1.6

1.2

0.8
0.9

0.4

0.8 0
-50 0 50 100 150 -50 0 50 100 150

T j , Junction Temperature ( C)
o T j , Junction Temperature ( o C )

Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance

Temperature v.s. Junction Temperature
100 5

10

T j = 150 o C T j = 25 o C 3
IS (A)

VGS(th) (V)

0.1
1

0.01 0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3/4
AP2761I-A

16 10000
f=1.0MHz

I D =10A
VGS , Gate to Source Voltage (V)

C iss
12
V DS =330V
V DS =410V
C oss
V DS =520V

C (pF)
8 100

C rss
0 1
0 10 20 30 40 50 60 70 80 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthjc)

10

0.2

1ms
ID (A)

0.1

1 0.1
10ms
0.05

100ms 0.02 PDM

t
1s T
0.1 0.01
DC
T c =25 o C Single Pulse Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse

0.01 0.01
0.1 1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
10V
QGS QGD

10%
VGS

td(on) tr td(off) t Charge Q

f

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4/4