AP2761I-H-HF

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ 100% Avalanche Test

D
BVDSS 700V
▼ Fast Switching Characteristic RDS(ON) 1.3Ω
▼ Simple Drive Requirement ID 6A
▼ RoHS Compliant G
S
Description
AP2761 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. G
D
S TO-220CFM(I)
TO-220CFM type provide high blocking voltage to overcome voltage
surge and sag in the toughest power system with the best combination
of fast switching,ruggedized design and cost-effectiveness.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 700 V
VGS Gate-Source Voltage +30 V
ID@TC=25℃ Continuous Drain Current, V GS @ 10V 6 A
ID@TC=100℃ Continuous Drain Current, V GS @ 10V 3.7 A
1
IDM Pulsed Drain Current 24 A
PD@TC=25℃ Total Power Dissipation 37 W
2
EAS Single Pulse Avalanche Energy 18 mJ
IAR Avalanche Current 6 A
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W

Data & specifications subject to change without notice 1

201007081
AP2761I-H-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 700 - - V
3
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A - - 1.3 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=4A - 9.4 - S
IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA
3
Qg Total Gate Charge ID=4A - 67 - nC
Qgs Gate-Source Charge VDS=480V - 9 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 26 - nC
3
td(on) Turn-on Delay Time VDD=300V - 13 - ns
tr Rise Time ID=4A - 8 - ns
td(off) Turn-off Delay Time RG=3.3Ω - 62 - ns
tf Fall Time VGS=10V - 14 - ns
Ciss Input Capacitance VGS=0V - 2750 - pF
Coss Output Capacitance VDS=25V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
3
VSD Forward On Voltage IS=6A, VGS=0V - - 1.5 V
3
trr Reverse Recovery Time IS=4A, VGS=0V, - 430 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 6.1 - µC

Notes:
1.Pulse width limited by max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω , IAS=6A.
3.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP2761I-H-HF

16 10

o 10V
T C =25 C 10V
7.0V T C =150 o C 7.0V
6.0V
8 6.0V

ID , Drain Current (A)

ID , Drain Current (A)

12
5.0V 5.0V
V GS =4.0V V GS =4.0V
6

4
2

0 0
0 4 8 12 16 20 24 0 4 8 12 16 20 24 28 32

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1.2 3

I D =3A
V G =10V
Normalized BVDSS (V)

1.1
Normalized RDS(ON)

0.9

0.8 0
-50 0 50 100 150 -50 0 50 100 150

o o
T j , Junction Temperature ( C) T j , Junction Temperature ( C )

Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance

Temperature v.s. Junction Temperature
10 1.5

8 1.3
Normalized VGS(th) (V)

T j = 150 o C T j = 25 o C
6 1.1
IS (A)

4 0.9

2 0.7

0 0.5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) o

T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP2761I-H-HF

16 4000
f=1.0MHz

I D =4A
V DS =480V
VGS , Gate to Source Voltage (V)

12 3000

C iss

C (pF)
8 2000

4 1000

C oss
0 0 C rss
0 20 40 60 80 100 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthjc)

Operation in this
0.2
10 area limited by
RDS(ON)
0.1 0.1
100us
0.05
ID (A)

1
0.02
1ms
0.01

PDM
10ms 0.01
Single Pulse t

0.1 100ms T

1s Duty factor = t/T

o
T c =25 C DC Peak Tj = PDM x Rthjc + T C

Single Pulse
0.01 0.001
1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
10V

QGS QGD
10%
VGS

td(on) tr td(off) t Charge Q

f

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform