Bulletin I25203 rev.

B 04/00

ST650C..L SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version

Features 790A
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)

Typical Applications
DC motor control
Controlled DC power supplies
AC controllers

case style TO-200AC (B-PUK)

Major Ratings and Characteristics
Parameters ST650C..L Units

IT(AV) 790 A

@ Ths 55 °C

IT(RMS) 1557 A

@ Ths 25 °C

ITSM @ 50Hz 10100 A

@ 60Hz 10700 A

I 2t @ 50Hz 510 KA2s

@ 60Hz 475 KA2s

VDRM/VRRM 2000 to 2400 V

tq typical 200 µs

TJ - 40 to 125 °C

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This datasheet has been downloaded from http://www.digchip.com at this page

ST650C..L Series
Bulletin I25203 rev. B 04/00

ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM /VRRM , max. repetitive VRSM , maximum non- IDRM/I RRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = T J max
V V mA
20 2000 2100
ST650C..L 22 2200 2300 80
24 2400 2500

On-state Conduction 

Parameter ST650C..L Units Conditions

I T(AV) Max. average on-state current 790 (324) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
I T(RMS) Max. RMS on-state current 1857 DC @ 25°C heatsink temperature double side cooled
I TSM Max. peak, one-cycle 10100 t = 10ms No voltage
non-repetitive surge current 10700 A t = 8.3ms reapplied
8600 t = 10ms 100% VRRM
9150 t = 8.3ms reapplied Sinusoidal half wave,
I 2t Maximum I2 t for fusing 510 t = 10ms No voltage Initial TJ = TJ max.
475 t = 8.3ms reapplied
KA2s
370 t = 10ms 100% VRRM
347 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 5100 KA2√s t = 0.1 to 10ms, no voltage reapplied
V T(TO)1 Low level value of threshold
1.04 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
V T(T O)2 High level value of threshold
1.13 (I > π x IT(AV) ),TJ = TJ max.
voltage

r t1 Low level value of on-state

0.61 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
slope resistance
mΩ
r t2 High level value of on-state
0.35 (I > π x IT(AV)),T J = TJ max.
slope resistance
V TM Max. on-state voltage 2.07 V I = 1700A, T J = TJ max, t = 10ms sine pulse
pk p
IH Maximum holding current 600
mA T J = 25°C, anode supply 12V resistive load
IL Typical latching current 1000

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 ST650C..L Series
Bulletin I25203 rev. B 04/00

Switching
Parameter ST650C..L Units Conditions
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
1000 A/µs
of turned-on current TJ = T J max, anode voltage ≤ 80% VDRM
Gate current 1A, di g /dt = 1A/µs
td Typical delay time 1.0
Vd = 0.67% VDRM, TJ = 25°C
µs
ITM = 750A, TJ = T J max, di/dt = 60A/µs, VR = 50V
t Typical turn-off time 200
q dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p

Blocking
Parameter ST650C..L Units Conditions

dv/dt Maximum critical rate of rise of

500 V/µs TJ = TJ max. linear to 80% rated VDRM
off-state voltage
IDRM Max. peak reverse and off-state
80 mA TJ = TJ max, rated V DRM/V RRM applied
IRRM leakage current

Triggering !
Parameter ST650C..L Units Conditions
PGM Maximum peak gate power 10.0 TJ = TJ max, t ≤ 5ms
p
W
PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
20
gate voltage
V TJ = TJ max, t ≤ 5ms
-VGM Maximum peak negative p
5.0
gate voltage
TYP. MAX.
200 - TJ = - 40°C
IGT DC gate current required
100 200 mA TJ = 25°C
to trigger Max. required gate trigger/ cur-
50 - TJ = 125°C rent/ voltage are the lowest value
which will trigger all units 12V
2.5 - TJ = - 40°C
VGT DC gate voltage required anode-to-cathode applied
1.8 3.0 V TJ = 25°C
to trigger
1.1 - TJ = 125°C

IGD DC gate current not to trigger 10 mA Max. gate current/voltage not to

trigger is the max. value which
TJ = TJ max will not trigger any unit with rated
VGD DC gate voltage not to trigger 0.25 V
VDRM anode-to-cathode applied

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ST650C..L Series
Bulletin I25203 rev. B 04/00

Thermal and Mechanical Specification

Parameter ST650C..L Units Conditions
TJ Max. operating temperature range -40 to 125
°C
T Max. storage temperature range -40 to 150
stg
RthJ-hs Max. thermal resistance, 0.073 DC operation single side cooled
K/W
junction to heatsink 0.031 DC operation double side cooled

RthC-hs Max. thermal resistance, 0.011 DC operation single side cooled

K/W
case to heatsink 0.006 DC operation double side cooled
F Mounting force, ± 10% 14700 N
(1500) (Kg)
wt Approximate weight 255 g

Case style TO - 200AC (B-PUK) See Outline Table

∆RthJ-hs Conduction 
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
Single Side Double Side Single Side Double Side
180° 0.009 0.009 0.006 0.006
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015 K/W TJ = TJ max.
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036

Ordering Information Table

Device Code
ST 65 0 C 24 L 1

1 2 3 4 5 6 7 8

1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - L = Puk Case TO-200AC (B-PUK)
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8 - Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)

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 ST650C..L Series
Bulletin I25203 rev. B 04/00

Outline Table
34 (1.34) DIA. MAX.
0.7 (0.03) MIN.
TWO PLACES
2 7 (1 . 06 ) M AX .

PIN RECEPTACLE
AMP. 60598-1

0.7 (0.03) MIN. 53 (2.09) DIA. MAX.

6.2 (0.24) MIN.

20°± 5°
4.7 (0.18)
58 .5 (2.3 ) D I A. M AX .

!
Case Style TO-200AC (B-PUK)
36.5 (1.44) All dimensions in millimeters (inches)

2 HOLES DIA. 3.5 (0.14) x Quote between upper and lower

2.5 (0.1) DEEP pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
CREPAGE DISTANCE 36.33 (1.430) MIN.
Specification)
STRIKE DISTANCE 17.43 (0.686) MIN.

1 30 13 0
M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re ( °C )

M a xim um A llo w a b le H e a t sin k T e m pe ra t u re (°C )

ST 6 5 0 C ..L Se rie s ST 6 5 0 C ..L S e rie s

(Sin g le Sid e C o o le d ) (Sin g le S id e C o o le d )
1 20 12 0
R th J-hs (D C ) = 0 .0 7 3 K / W R thJ-hs (D C ) = 0 .0 7 3 K / W

1 10 11 0

1 00 10 0 Co nd uc tio n P erio d
C o nduc tion An g le

90 90
30°
80 30° 80 60°
60 °
90 °
9 0°
70 120° 70 120°
180° 180° DC
60 60
0 50 1 00 1 50 20 0 2 5 0 3 0 0 35 0 4 00 0 10 0 200 300 4 00 5 00 60 0

A v e ra g e O n -s ta t e C u rre n t (A ) A v e ra g e O n - sta t e C u rre n t (A )

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

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ST650C..L Series
Bulletin I25203 rev. B 04/00

13 0 1 30

M a x im u m A llo w a b le H e a tsin k Te m p e ra tu re (° C )
M a xim u m A llo w a b le H e a t sin k T e m p e ra t u re (°C )

ST 6 5 0 C ..L Se rie s S T 6 5 0 C ..L S e rie s

12 0 1 20 (D o u b le S id e C o o le d )
(D o u ble S id e C o o le d )
11 0 R thJ-h s (D C ) = 0 .0 3 1 K / W 1 10 R th J-hs (D C ) = 0 .0 3 1 K / W
10 0 1 00
90 90
80 C o nduc tion A ng le 80 Co nd uc tio n Pe rio d

70 70
1 80°
60 60
50 120° 50
90° 9 0°
40 40
60 ° 6 0° 120°
30 30° 30 30° 180 ° DC
20 20
0 10 0 2 00 3 0 0 4 0 0 5 00 6 00 7 0 0 80 0 0 2 00 4 00 60 0 80 0 10 0 0 1 2 00 1 40 0
A v e ra g e O n - sta t e C u rre n t (A ) A v e ra g e O n -st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

20 0 0 2 40 0
M a xim u m A v e ra g e O n -st a te P o w e r Lo ss (W )

M ax im u m A v e ra g e O n - st a t e P o w e r Lo ss (W )

1 80° DC
2 20 0
17 5 0 1 20° 1 80°
90° 2 00 0 1 20°
15 0 0 60° 1 80 0 90°
30° 60°
1 60 0
12 5 0 R M S Lim it 30°
1 40 0
R M S Lim it
10 0 0 1 20 0
1 00 0
750
8 00 C o ndu ct io n P erio d
C o nd uc tio n A ng le
500 6 00
S T 6 5 0 C ..L S e rie s S T 6 5 0 C ..L S e rie s
4 00
250 T J = 1 2 5 °C T J = 1 2 5 °C
2 00
0 0
0 1 0 0 2 00 3 0 0 4 0 0 50 0 6 0 0 70 0 8 00 0 20 0 4 00 600 80 0 10 0 0 1 20 0 1 4 00
A v e ra g e O n -st a t e C u rre n t (A ) A v e ra g e O n -st a te C urre n t (A )
Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics

10 0 00 1 2 00 0
P e a k H a lf Sin e W a v e O n -st a t e C u rre n t (A )
P e a k H a lf Sin e W a v e O n -st a te C u rre n t (A )

A t A ny R at e d L o a d C o nd itio n A n d W ith M a x im u m N o n R e p e t it iv e S u rg e C u rre n t

R at e d V RR M A p plie d Fo llo w in g Su rge . V e rsu s P u lse T ra in D u ra tio n . C o n t ro l
In itia l T J = 1 2 5 °C 1 1 00 0
9 00 0 O f C o n d u c t io n M a y N o t B e M a in t a in e d .
@ 6 0 H z 0 .0 0 8 3 s In it ia l TJ = 1 2 5 °C
1 0 00 0
@ 5 0 H z 0 .0 1 0 0 s N o V o lt a g e R e a p p lie d
8 00 0
90 0 0 R a te d VR RM Re a p p lie d

7 00 0 80 0 0

70 0 0
6 00 0
60 0 0
5 00 0
ST 6 5 0 C ..L S e r ie s 50 0 0 S T6 5 0 C ..L S e rie s

4 00 0 40 0 0
1 10 10 0 0 .0 1 0. 1 1
Nu m be r O f Equ al Am p litud e H alf C yc le C urren t Pulse s (N ) P u lse T ra in D u ra t io n (s)
Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled Single and Double Side Cooled
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 ST650C..L Series
Bulletin I25203 rev. B 04/00

10000

Instan tan eous On -stat e Current (A)

T J = 25°C

1000 T = 125°C
J

ST650C..L Series

100
0. 5 1 1.5 2 2.5 3
Instan tan eous O n -stat e V oltage (V )
Fig. 9 - On-state Voltage Drop Characteristics

0. 1
T ra n sie n t T h e rm a l Im pe d a nc e Z thJ- hs (K / W )

St e a d y St a te V a lu e
R thJ-hs = 0 .0 7 3 K/ W
( Sin gle Sid e C o o le d)
R thJ-hs = 0 .0 3 1 K/ W
( D o u ble Sid e C o o le d )
0 .0 1 ( D C O p e ra t io n )

ST 6 5 0 C ..L Se rie s

0 .0 0 1
0 .0 0 1 0 .0 1 0 .1 1 10
S q ua re W a v e P u lse D u ra t io n ( s)

Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

100
Re c t a n g u la r g a t e p ulse (1) PG M = 10W , tp = 4m s
a ) R e c o m m e n d e d lo a d lin e f o r (2) PG M = 20W , tp = 2m s
In st a nt an e o us G a te V o lta g e (V )

ra t e d d i/ dt : 2 0 V , 1 0 o h m s; t r<= 1 µ s (3) PG M = 40W , tp = 1m s

b ) Re c o m m e n d e d lo a d lin e fo r (4) PG M = 60W , tp = 0 .6 6 m s
< = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s
10 t r< = 1 µ s (a )
(b )
Tj=-40 °C
Tj=25 °C
Tj=125 °C

1
(1) (2) (3) (4)
VG D
IG D
ST 6 5 0 C ..L Se rie s F re q u e n c y L im ite d b y P G ( A V )
0 .1
0 .0 0 1 0 .0 1 0 .1 1 10 1 00
In st a n t an e o us G a t e C u rre n t ( A )

Fig. 11 - Gate Characteristics

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