Experiment 13: To Demonstrate The Voltage Characteristics of Semiconductors
Experiment 13: To Demonstrate The Voltage Characteristics of Semiconductors
13.2 EQUIPMENT:
● DC power supply
● Multimeter (DMM)
● Resistor 470Ω
● 1N34A Diode
● Bread Board
13.3 BACKGROUND:
13.3.1 Semiconductor:
A semiconductor material has an electrical conductivity between that of a conductor and an
insulator. Its resistance decreases as its temperature increases, which is the behavior opposite to that
of a metal. Its conducting properties may be altered in useful ways by the deliberate, controlled
introduction of impurities. Where two differently-doped regions exist in the same crystal, a
semiconductor junction is created.
13.3.2 Diode:
The semiconductor diode is created by simply joining an n-type material (with majority of electrons)
and a p-type material (with majority of holes) together. Joining of these two materials results in the
formation of a p-n junction. The p-side of diode is called anode and n-side of diode is called cathode.
Figure 13.1
The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is
connected to anode and –ve terminal of the input supply is connected to cathode, then diode is said
to be forward biased. In this condition the height of the potential barrier at the junction is lowered
by an amount equal to given forward biasing voltage. Both the holes from p-side and electrons from
n-side cross the junction simultaneously and constitute a forward current. Assuming current flowing
through the diode to be very large, the diode can be approximated as closed switch.
Figure 13.2
On the other hand, if –ve terminal of the input supply is connected to anode and +ve terminal of the
input supply is connected to cathode then the diode is said to be reverse biased. In this condition an
amount equal to reverse biasing voltage increases the height of the potential barrier at the junction.
Both the holes on p-side and electrons on n-side tend to move away from the junction thereby
increasing the depleted region. This small current is due to thermally generated carriers. Assuming
current flowing through the diode to be negligible, the diode can be approximated as an open switch.
The volt-ampere characteristics of a diode explained by following graph:
Figure 13.3
13.4 PROCEDURE:
13.4.1 Forward biased operation:
1. Make the circuit as shown in fig. 13.4.
2. Increase the source voltage with the steps of 0.2V and measure current flowing through the diode
using ammeter and voltage across the diode using voltmeter and fill the table 13.1.
Figure 13.4
Sr. # Applied Voltage ID VD
1 0.1 0 0.10
2 0.2 0 0.20
3 0.3 0 0.30
4 0.4 0 0.40
5 0.5 0 0.49
6 0.6 0 0.54
7 0.7 0.28 0.57
8 0.8 0.46 0.59
9 0.9 0.64 0.60
10 1.0 0.83 0.61
11 1.1 1.03 0.62
12 1.2 1.23 0.62
13 1.3 1.43 0.63
14 1.4 1.63 0.63
15 1.5 1.84 0.63
16 1.6 2.04 0.64
17 1.7 2.25 0.64
18 1.8 2.45 0.65
19 1.9 2.66 0.65
20 2.0 2.86 0.65
Table 13.1
13.4.2 Reversed biased operation:
1. Now invert the polarity of diode to make it reversed bias as shown in fig. 13.5.
2. Increase the source voltage with appropriate steps and measure current flowing through the diode
using ammeter and voltage across the diode using voltmeter and fill the table 2.
Figure 13.5
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