0% found this document useful (0 votes)
112 views7 pages

Experiment 13: To Demonstrate The Voltage Characteristics of Semiconductors

This document describes an experiment to demonstrate the voltage characteristics of semiconductors. The experiment involves measuring the current and voltage of a diode under forward and reverse bias conditions. A circuit is constructed using a diode, power supply, resistor, and multimeter. Under forward bias, the voltage is increased in steps from 0.1V to 2V and current measurements are recorded, showing a rapid increase after 0.7V. In reverse bias, voltage is increased from -2V to -40V in steps, but no current is recorded, demonstrating the diode's blocking behavior. A graph is plotted of current versus voltage to illustrate the diode's characteristics.

Uploaded by

Zain Mehmood
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
112 views7 pages

Experiment 13: To Demonstrate The Voltage Characteristics of Semiconductors

This document describes an experiment to demonstrate the voltage characteristics of semiconductors. The experiment involves measuring the current and voltage of a diode under forward and reverse bias conditions. A circuit is constructed using a diode, power supply, resistor, and multimeter. Under forward bias, the voltage is increased in steps from 0.1V to 2V and current measurements are recorded, showing a rapid increase after 0.7V. In reverse bias, voltage is increased from -2V to -40V in steps, but no current is recorded, demonstrating the diode's blocking behavior. A graph is plotted of current versus voltage to illustrate the diode's characteristics.

Uploaded by

Zain Mehmood
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
You are on page 1/ 7

EXPERIMENT 13 Date Perform: ________________

To Demonstrate the Voltage Characteristics of Semiconductors


13.1 OBJECTIVE:
● To demonstrate the voltage characteristics of semiconductors

13.2 EQUIPMENT:
● DC power supply
● Multimeter (DMM)
● Resistor 470Ω
● 1N34A Diode
● Bread Board
13.3 BACKGROUND:
13.3.1 Semiconductor:
A semiconductor material has an electrical conductivity between that of a conductor and an
insulator. Its resistance decreases as its temperature increases, which is the behavior opposite to that
of a metal. Its conducting properties may be altered in useful ways by the deliberate, controlled
introduction of impurities. Where two differently-doped regions exist in the same crystal, a
semiconductor junction is created.
13.3.2 Diode:
The semiconductor diode is created by simply joining an n-type material (with majority of electrons)
and a p-type material (with majority of holes) together. Joining of these two materials results in the
formation of a p-n junction. The p-side of diode is called anode and n-side of diode is called cathode.

Figure 13.1
The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is
connected to anode and –ve terminal of the input supply is connected to cathode, then diode is said
to be forward biased. In this condition the height of the potential barrier at the junction is lowered
by an amount equal to given forward biasing voltage. Both the holes from p-side and electrons from
n-side cross the junction simultaneously and constitute a forward current. Assuming current flowing
through the diode to be very large, the diode can be approximated as closed switch.
Figure 13.2
On the other hand, if –ve terminal of the input supply is connected to anode and +ve terminal of the
input supply is connected to cathode then the diode is said to be reverse biased. In this condition an
amount equal to reverse biasing voltage increases the height of the potential barrier at the junction.
Both the holes on p-side and electrons on n-side tend to move away from the junction thereby
increasing the depleted region. This small current is due to thermally generated carriers. Assuming
current flowing through the diode to be negligible, the diode can be approximated as an open switch.
The volt-ampere characteristics of a diode explained by following graph:

Figure 13.3
13.4 PROCEDURE:
13.4.1 Forward biased operation:
1. Make the circuit as shown in fig. 13.4.
2. Increase the source voltage with the steps of 0.2V and measure current flowing through the diode
using ammeter and voltage across the diode using voltmeter and fill the table 13.1.
Figure 13.4
Sr. # Applied Voltage ID VD
1 0.1 0 0.10
2 0.2 0 0.20
3 0.3 0 0.30
4 0.4 0 0.40
5 0.5 0 0.49
6 0.6 0 0.54
7 0.7 0.28 0.57
8 0.8 0.46 0.59
9 0.9 0.64 0.60
10 1.0 0.83 0.61
11 1.1 1.03 0.62
12 1.2 1.23 0.62
13 1.3 1.43 0.63
14 1.4 1.63 0.63
15 1.5 1.84 0.63
16 1.6 2.04 0.64
17 1.7 2.25 0.64
18 1.8 2.45 0.65
19 1.9 2.66 0.65
20 2.0 2.86 0.65

Table 13.1
13.4.2 Reversed biased operation:
1. Now invert the polarity of diode to make it reversed bias as shown in fig. 13.5.
2. Increase the source voltage with appropriate steps and measure current flowing through the diode
using ammeter and voltage across the diode using voltmeter and fill the table 2.
Figure 13.5

Sr. # Applied Voltage ID VD


1 2 0 -2
2 4 0 -4
3 6 0 -6
4 8 0 -8
5 10 0 -10
6 12 0 -12
7 14 0 -14
8 16 0 -16
9 18 0 -18
10 20 0 -20
11 22 0 -22
12 24 0 -24
13 26 0 -26
14 28 0 -28
15 30 0 -30
16 32 0 -32
17 34 0 -34
18 36 0 -36
19 38 0 -38
20 40 0 -40
Table 13.2
13.4.3 Graph:
Now draw the graph by taking applied voltage on x-axis and current through the diode on y-axis.
NL-110 PHYSICS FOR ENGINEERS - LAB
To enable the students to experimentally verify the physics concepts related to their core
engineering domain.
CLO Statement ↓ Exemplary Proficient Developing Beginning Novice
Score → (5) (4) (3) (2) (1)

Behave Needs minor Needs major Needs help


Completes
responsibly help from help from from other
the assigned
1 within team, instructor to instructor to groups to Does not
task without
and perform complete complete complete work
instructor’s
the assigned assigned assigned
help
experiment task task task
safely

To
Demonstrate Correctly Correctly
the operation Correctly
performs the performs the
and performs the
lab but lab but Poorly
4 characteristics lab and Does not
addresses addresses performs
completely Work
of resistive, the manual the manual the lab
addresses
capacitive and with minor with major
the manual
semiconductor mistakes mistakes
materials

CLO MARKS OBTAINED


1
4

Instructor’s Signatures: __________________________

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy