Scribd Logo
Upload

Welcome to Scribd!

  • 40 views

    V 200V I 27.4A R 0.100: Features

    Uploaded by

    Wilson Yecit Ortiz
    This document provides specifications for an N-channel power MOSFET. It lists dimensions, electrical ratings, and thermal characteristics. Key specifications include: - Maximum drain-source voltage of 200V - Continuous drain current of 27.4A at 25°C and 17A at 100°C - On-resistance of 0.100 ohm at 27.4A drain current - Gate threshold voltage between 2-4V - Maximum power dissipation of 150W at 25°C

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    V 200V I 27.4A R 0.100: Features

    Uploaded by

    Wilson Yecit Ortiz
    40 views2 pages
    This document provides specifications for an N-channel power MOSFET. It lists dimensions, electrical ratings, and thermal characteristics. Key specifications include: - Maximum drain-source voltage of 200V - Continuous drain current of 27.4A at 25°C and 17A at 100°C - On-resistance of 0.100 ohm at 27.4A drain current - Gate threshold voltage between 2-4V - Maximum power dissipation of 150W at 25°C

    Original Description:

    N–CHANNEL

    Original Title

    N–CHANNEL

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for an N-channel power MOSFET. It lists dimensions, electrical ratings, and thermal characteristics. Key specifications include: - Maximum drain-source voltage of 200V - Continuous drain current of 27.4A at 25°C and 17A at 100°C - On-resistance of 0.100 ohm at 27.4A drain current - Gate threshold voltage between 2-4V - Maximum power dissipation of 150W at 25°C

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    40 views2 pages

    V 200V I 27.4A R 0.100: Features

    Uploaded by

    Wilson Yecit Ortiz
    This document provides specifications for an N-channel power MOSFET. It lists dimensions, electrical ratings, and thermal characteristics. Key specifications include: - Maximum drain-source voltage of 200V - Continuous drain current of 27.4A at 25°C and 17A at 100°C - On-resistance of 0.100 ohm at 27.4A drain current - Gate threshold voltage between 2-4V - Maximum power dissipation of 150W at 25°C

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    IRFM

    MECHANICAL DATA
    Dimensions in mm (inches) N–CHANNEL
    POWER MOSFET
    VDSS 200V
    1 .2 7 (.0 5 0 ) 1 3 .8 4 (.5 4 5 )
    ID(cont) 27.4A
    0.100W
    1 .0 2 (.0 4 0 ) 1 3 .5 9 (.5 3 5 )

    6 .6 0 (.2 6 0 )
    6 .3 2 (.2 4 9 )
    6 .9 1 (.2 7 2 )
    6 .8 1 (.2 6 8 )
    RDS(on)
    3 .7 8 (.1 4 9 )
    3 .5 3 (.1 3 9 )
    D IA
    FEATURES
    2 0 .3 2 (.8 0 0 ) 1 7 .4 0 (.6 8 5 )
    2 0 .0 6 (.7 9 0 )
    1 3 .8 4 (.5 4 5 )
    1 3 .5 9 (.5 3 5 )
    1 6 .8 9 (.6 6 5 )
    • N–CHANNEL MOSFET
    R 1 .0 1 (.0 4 0 ) M IN
    G a te
    • HIGH VOLTAGE
    S o u rc e
    4 .9 5 (.1 9 5 )
    4 .1 9 (.1 6 5 ) D r a in
    • INTEGRAL PROTECTION DIODE
    1 .1 4 (.0 4 5 ) D ia T y p
    3 .8 1 (.1 5 0 ) B S C
    0 .8 9 (0 .3 5 ) 3 L e a d s • HERMETIC ISOLATED TO-254 PAC
    9 .5 2 (.3 7 5 )
    3 .8 1 (.1 5 0 ) B S C
    8 .7 6 (.3 4 5 )
    • CERAMIC SURFACE MOUNT PACK
    OPTION

    TO–254 Metal Package


    Pin 1 – Drain Pin 2 – Source Pin 3 – Gate

    ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    VGS Gate – Source Voltage ±20V
    ID Continuous Drain Current @ VGS = 10V , TC = 25°C 27.4A
    @ VGS = 10V , TC = 100°C 17A
    IDM Pulsed Drain Current 110A
    PD Max. Power Dissipation @ TC = 25°C 150W
    Linear Derating Factor 1.2W / °C
    IL Avalanche Current , Clamped 1 27.4A
    dv / dt Peak Diode Recovery 2 5.5V / ns
    RqJC Thermal Resistance Junction – Case 0.83°C / W
    RqJA Thermal Resistance Junction – Ambient 48°C / W
    RqCS Thermal Resistance Case – Sink 0.21°C / W typ.
    TJ , TSTG Operating Junction and Storage Temperature Range –55 to 150°C
    TL Lead Temperature (1.6mm from case for 10s) 300°C
    IRFM

    ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)


    Parameter Test Conditions Min. Typ. Max
    STATIC ELECTRICAL RATINGS
    BVDSS Drain – Source Breakdown Voltage VGS = 0 ID = 1mA 200
    DBVDSS Temperature Coefficient of Reference to 25°C
    0.28
    DTJ Breakdown Voltage ID = 1mA
    Static Drain – Source On–State VGS = 10V ID = 17A 0.100
    RDS(on)
    Resistance 2 VGS = 10V ID = 27.4A 0.105
    VGS(th) Gate Threshold Voltage VDS = VGS ID = 250mA 2 4
    gfs Forward Transconductance 2 VDS ³ 15V IDS = 27.4A 9
    VGS = 0 VDS = 0.8BVDSS 25
    IDSS Zero Gate Voltage Drain Current
    TJ = 125°C 250
    IGSS Forward Gate – Source Leakage VGS = 20V 100
    IGSS Reverse Gate – Source Leakage VGS = –20V –100
    DYNAMIC CHARACTERISTICS
    Ciss Input Capacitance 3500
    VGS = 0
    Coss Output Capacitance 700
    VDS = 25V
    Crss Reverse Transfer Capacitance 110
    f = 1MHz
    CDC Drain – Case Capacitance 12
    Qg Total Gate Charge VGS = 10V 55 115
    Qgs Gate – Source Charge ID = 27.4A 8 22
    Qgd Gate – Drain (“Miller”) Charge VDS = 0.5BVDSS 30 60
    td(on) Turn– On Delay Time 35
    VDD = 100V
    tr Rise Time 190
    ID = 27.4A
    td(off) Turn–Off Delay Time 170
    RG = 2.35W
    tf Fall Time 130
    SOURCE – DRAIN DIODE CHARACTERISTICS
    IS Continuous Source Current 27.4
    ISM Pulse Source Current 1 110
    IS = 27.4A TJ = 25°C
    VSD Diode Forward Voltage 2 1.9
    VGS = 0
    trr Reverse Recovery Time 2 IF = 27.4A TJ = 25°C 950
    Qrr Reverse Recovery Charge 2 di / dt £ 100A/ms VDD £ 50V 9.0
    ton Forward Turn–On Time Negligible
    PACKAGE CHARACTERISTICS
    LD Internal Drain Inductance Measured from 6mm down drain lead to centre of die 8.7
    LS Internal Source Inductance Measured from 6mm down source lead to source bond pad 8.7

    You might also like

    pFad - Phonifier reborn

    Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

    Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


    Alternative Proxies:

    Alternative Proxy

    pFad Proxy

    pFad v3 Proxy

    pFad v4 Proxy