MURF1005 thru MURF1060 ®

MURF1005 thru MURF1060 Pb

Pb Free Plating Product
10.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier

Features ITO-220AB Unit : inch (mm)

¬ Fast switching for high efficiency .406(10.3) .189(4.8)

.100(2.55)
.112(2.85)
.165(4.2)

.272(6.9)
.248(6.3)
.381(9.7)

¬ Low forward voltage drop .134(3.4)

.118(3.0)
.130(3.3)
.114(2.9)

¬ High current capability

¬ Low reverse leakage current

.606(15.4)
.583(14.8)
¬ High surge current capability

Mechanical Data .071(1.8)

.114(2.9)
.098(2.5)

.512(13.0)
.543(13.8)
.161(4.1)MAX
.055(1.4)

¬ Case:ITO-220AB Isolated/Insulated .055(1.4)

.039(1.0)
.032(.8)
MAX
.035(0.9)

¬ Epoxy: UL 94V-0 rate flame retardant .011(0.3)

.1 .1

¬ Terminals: Solderable per MIL-STD-202 (2.55) (2.55)

method 208
¬ Polarity:As marked on diode body Case Case Case Case

¬ Mounting position: Any Positive Negative

Doubler Reverse Doubler
¬ Weight: 2.24 grams Common Cathode Common Anode
Suffix "CT" Suffix "N" Suffix "D" Suffix "E"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
COMMON CATHODE POLARITY SUFFIX "CT" MURF1005CT MURF1010CT MURF1020CT MURF1030CT MURF1040CT MURF1060CT
COMMON ANODE POLARITY SUFFIX "N"
SYMBOL
MURF1005N MURF1010N MURF1020N MURF1030N MURF1040N MURF1060N
UNIT
DOUBLER POLARITY SUFFIX "D" MURF1005D MURF1010D MURF1020D MURF1030D MURF1040D MURF1060D
REVERSE POLARITY SUFFIX "E" MURF1005E MURF1010E MURF1020E MURF1030E MURF1040E MURF1060E

Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 V

Maximum RMS Voltage VRMS 35 70 140 210 280 420 V

Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 V

Maximum Average Forward Rectified

o IF(AV) 10.0 A
Current TC=100 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM 100 A
(JEDEC method)

Maximum Instantaneous Forward Voltage

VF 0.98 1.3 1.7 V
@ 5.0 A

Maximum DC Reverse Current @TJ=25 C

o
10.0 uA
o IR
At Rated DC Blocking Voltage @TJ=125 C 250 uA

Maximum Reverse Recovery Time (Note 1) Trr 35 nS

Typical junction Capacitance (Note 2) CJ 65 pF

o
Typical Thermal Resistance (Note 3) R JC 2.2 CW
Operating Junction and Storage -55 to +150 o
TJ, TSTG C
Temperature Range

NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.

Page 1/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

Free Datasheet http://www.datasheet4u.com/
MURF1005 thru MURF1060 ®

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

10 100
Pulse Width 8.3ms

PEAK FORWARD SURGE CURRENT,

Single Half-Sire-Wave
AVERAGE FORWARD RECTIFIED

(JEDEC Method)
8 80
CURRENT, AMPERES

AMPERES
6 60

4 40

2 20

60 Hz Resistive or
Inductive load
0 0
0 50 100 150 1 10 100

o NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE, C

FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS
100 1000
IINSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS REVERSE CURRENT,

o
MUR1005-MUR1020 TJ=125 C
100
10
MICROAMPERES
AMPERES

10
MUR1030-MUR1040
o
MUR1060 TJ=25 C
1
1

o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100

INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF RATED PEAK REVERSE VOLTAGE,%

VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000 o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE, pF

100

10
0.1 1.0 4.0 10 100

REVERSE VOLTAGE, VOLTS

Page 2/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

Free Datasheet http://www.datasheet4u.com/