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NTE2395 Mosfet N-CH, Enhancement Mode High Speed Switch: Features

This document describes the specifications and ratings of an N-channel enhancement mode MOSFET for high speed switching applications. Key features include a fast switching speed, a high operating temperature of up to 175°C, and ease of paralleling. Absolute maximum ratings include a continuous drain current of 50A at 25°C, pulsed drain current of 200A, and power dissipation of 150W at 25°C. Electrical characteristics include a typical on-resistance of less than 0.028Ω and turn-on/off delay times of 14ns and 45ns respectively.

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58 views

NTE2395 Mosfet N-CH, Enhancement Mode High Speed Switch: Features

This document describes the specifications and ratings of an N-channel enhancement mode MOSFET for high speed switching applications. Key features include a fast switching speed, a high operating temperature of up to 175°C, and ease of paralleling. Absolute maximum ratings include a continuous drain current of 50A at 25°C, pulsed drain current of 200A, and power dissipation of 150W at 25°C. Electrical characteristics include a typical on-resistance of less than 0.028Ω and turn-on/off delay times of 14ns and 45ns respectively.

Uploaded by

Abel Rodriguez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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NTE2395

MOSFET
N–Ch, Enhancement Mode
High Speed Switch

Features:
D Dynamic dv/dt Rating
D +175°C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements

Absolute Maximum Ratings:


Continuous Drain Current (VGS = 10V), ID
TC = +25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C
Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W
Note 1. Current limited by the package, (Die Current = 51A).
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. VDD = 25V, starting TJ = +25°C, L = 44µH, RG = 25Ω, IAS = 51A
Note 4. ISD ≤ 51A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ +175°C
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–to–Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 – – V
Breakdown Voltage Temp. Coefficient ∆V(BR)DSS Reference to +25°C, ID = 1mA – 0.060 – V/°C
∆TJ
Static Drain–to–Source On–Resistance RDS(on) VGS = 10V, ID = 31A, Note 5 – – 0.028 Ω
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – 4.0 V
Forward Transconductance gfs VDS = 25V, ID = 31A, Note 5 15 – – mhos
Drain–to–Source Leakage Current IDSS VDS = 60V, VGS = 0V – – 25 µA
VDS = 48V, VGS = 0V, TJ = +125°C – – 250 µA
Gate–to–Source Forward Leakage IGSS VGS = 20V – – 100 nA
Gate–to–Source Reverse Leakage IGSS VGS = –20V – – –100 nA
Total Gate Charge Qg ID = 51A, VDS = 48V, VGS = 10V, – – 67 nC
Note 5
Gate–to–Source Charge Qgs – – 18 nC
Gate–to–Drain (“Miller”) Charge Qgd – – 25 nC
Turn–On Delay Time td(on) VDD = 30V, ID = 51A, RG = 9.1Ω, – 14 – ns
Ω Note 5
RD = 0.55Ω,
Rise Time tr – 110 – ns
Turn–Off Delay Time td(off) – 45 – ns
Fall Time tf – 92 – ns
Internal Drain Inductance LD Between lead, .250in. (6.0) mm from – 4.5 – nH
package and center of die contact
Internal Source Inductance LS – 7.5 – nH
Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz – 1900 – pF
Output Capacitance Coss – 920 – pF
Reverse Transfer Capaticance Crss – 170 – pF

Source–Drain Ratings and Characteristics:


Parameter Symbol Test Conditions Min Typ Max Unit
Continuous Source Current (Body Diode) IS Note 1 – – 50 A
Pulsed Source Current (Body Diode) ISM Note 2 – – 200 A
Diode Forward Voltage VSD TJ = +25°C, IS = 51A, VGS = 0V, – – 2.5 V
Note 5
Reverse Recovery Time trr TJ = +25°C, IF = 51A, – 120 180 ns
di/dt = 100A/µs, Note 5
Reverse Recovery Charge Qrr – 0.53 0.80 µC
Forward Turn–On Time ton Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD)

Note 1. Current limited by the package, (Die Current = 51A).


Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 5. Pulse width ≤ 300µs; duty cycle ≤ 2%.
.420 (10.67)
Max

.110 (2.79)

.147 (3.75) Dia Max .500


(12.7)
Max

.250 (6.35)
Max

.500
(12.7)
Min
.070 (1.78) Max

Gate Source

.100 (2.54) Drain/Tab

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