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    Threshold Voltage Effects: 2.4.3.1 Body Effect

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    Carlos Saavedra
    The threshold voltage of a transistor increases with the source voltage and channel length, and decreases with the body and drain voltages. The body effect models this by representing the threshold voltage as the nominal threshold plus a term that increases with the source-body voltage. This degradation occurs because applying a source-body voltage increases the charge needed for channel inversion.

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    Threshold Voltage Effects: 2.4.3.1 Body Effect

    Uploaded by

    Carlos Saavedra
    116 views1 page
    The threshold voltage of a transistor increases with the source voltage and channel length, and decreases with the body and drain voltages. The body effect models this by representing the threshold voltage as the nominal threshold plus a term that increases with the source-body voltage. This degradation occurs because applying a source-body voltage increases the charge needed for channel inversion.

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    CMOS-VLSI-design-106

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    The threshold voltage of a transistor increases with the source voltage and channel length, and decreases with the body and drain voltages. The body effect models this by representing the threshold voltage as the nominal threshold plus a term that increases with the source-body voltage. This degradation occurs because applying a source-body voltage increases the charge needed for channel inversion.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    116 views1 page

    Threshold Voltage Effects: 2.4.3.1 Body Effect

    Uploaded by

    Carlos Saavedra
    The threshold voltage of a transistor increases with the source voltage and channel length, and decreases with the body and drain voltages. The body effect models this by representing the threshold voltage as the nominal threshold plus a term that increases with the source-body voltage. This degradation occurs because applying a source-body voltage increases the charge needed for channel inversion.

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    © All Rights Reserved
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    2.

    4 Nonideal I-V Effects 79

    2.4.3 Threshold Voltage Effects


    So far, we have treated the threshold voltage as a constant. However, Vt increases with the
    source voltage, decreases with the body voltage, decreases with the drain voltage, and
    increases with channel length [Roy03]. This section models each of these effects.

    2.4.3.1 Body Effect Until now, we have considered a transistor to be a three-terminal


    device with gate, source, and drain. However, the body is an implicit fourth terminal.
    When a voltage Vsb is applied between the source and body, it increases the amount of
    charge required to invert the channel, hence, it increases the threshold voltage. The
    threshold voltage can be modeled as

    Vt = Vt 0 + L ( Ks + V sb  Ks ) (2.35)

    where Vt 0 is the threshold voltage when the source is at the body potential, Ks is the surface
    potential at threshold (see a device physics text such as [Tsividis99] for further discussion
    of surface potential), and L is the body effect coefficient, typically in the range 0.4 to 1 V1/2.
    In turn, these depend on the doping level in the channel, NA. The body effect further
    degrades the performance of pass transistors trying to pass the weak value (e.g., nMOS
    transistors passing a ‘1’), as we will examine in Section 2.5.4. Section 5.3.4 will describe
    how a body bias can intentionally be applied to alter the threshold voltage, permitting
    trade-offs between performance and subthreshold leakage current.
    NA
    Ks = 2vT ln (2.36)
    ni

    t ox 2qJ si N A
    L = 2qJ si N A = (2.37)
    J ox C ox
    For small voltages applied to the source or body, EQ (2.35) can be linearized to

    Vt = Vt 0 + kL V sb (2.38)
    where

    qJ si N A
    NA
    L vT ln ni (2.39)
    kL = =
    2 Ks 2C ox

    Example 2.5
    Consider the nMOS transistor in a 65 nm process with a nominal threshold voltage of
    0.3 V and a doping level of 8 × 1017 cm–3. The body is tied to ground with a substrate
    contact. How much does the threshold change at room temperature if the source is at
    0.6 V instead of 0?
    SOLUTION: At room temperature, the thermal voltage vT = kT/q = 26 mV and ni = 1.45
    × 1010 cm–3. The threshold increases by 0.04 V.

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